Enhanced Curie temperature persisting between 100 and 200K (∼50K by theory) with Mn (∼0.290%) based on InMnP:Zn

Relevant, systematic variation of morphology and magnetism according to annealing in InMnP:Zn

“…1). The AES depth profiles agrees well with the previous result that the InMnP:Zn epilayer annealed at 573 K for 30 min with the Mn concentration (T c $150 K) did not generate any precipitates such as InMn 3 and MnP, based on the analysis of the anomalous Hall effect and electron diffraction pattern from transmission electron microscopy [13]. It is found that limiting the annealing temperature below 673 K while extending the holding was critical in preventing the formation of secondary phases.…”

“…Meanwhile, GaAs, a narrow bandgap DMS, has a comparatively low T c at 100-170 K predicted by theory and confirmed by experiment [1,[8][9][10]. Apart from Ga-based semiconductors, InP-based DMS has also been considered as a possible candidate material and articles regarding InMnP DMS such as Mn + -implanted InP [11], nanostructured InMnP [12], and thermally diffused InMnP:Zn [13] have been reported. The values of T c reported in those works were also relatively low at 25-150 K. Although T c for both GaAs and InP incorporated with Mn is low, GaMnAs and InMnP are still promising materials for accomplishing the properties of a DMS.…”