Relevant correlation between electrical and magnetic properties for p-type InP:Zn implanted with Mn (10 at. %)

Abstract

A relevant correlation between magnetic properties and Mn-related deep level states for the Mn-implanted p-type InMnP:Zn layers annealed at 400–600 °C was investigated. For the 600 °C-annealed sample, the portion of deep level transient spectroscopy signals corresponding to Mn-related states was observed to significantly increase while that related to charge-trapping centers observed for 400 and 500 °C-annealed samples drastically decreased. The sample showed the improved ferromagnetic properties compared with other samples. These results are considered as originating from the effective incorporation of Mn ions into the InP:Zn host lattice with recovering the crystallinity after thermal annealing.

Thermodynamic Behavior of Excitonic Emission Properties in Manganese- and Zinc-Codoped Indium Phosphide Diluted Magnetic Semiconductor Layers

“…The diluted magnetic semiconductor (DMS) has emerged as the most promising candidate for spintronic applications. − In the past decade, numerous theoretical and experimental studies on the physical properties of DMSs have been extensively conducted in III–V systems (GaAs, InAs, GaN, and InP). − Furthermore, in recent years, spintronic devices such as spin field-effect transistor and spin-polarized light-emitting diode (spin-LED) have been experimentally demonstrated. , Although multiple spin functionalities have been observed, the devices show extremely low efficiency. For spin-LED, the electroluminescence efficiency is low and is strongly affected by the spin-lifetime and excitonic properties.…”