Enhanced defect detection capability using learning system for extreme ultraviolet lithography mask inspection tool with projection electron microscope optics

Standard samples with programed defects, designed to evaluate pattern inspection tools that use electron beams, were fabricated on 12-in. Si wafer. By using a structure with a conductive pattern on an insulator layer, scanning electron microscope (SEM) images with various pattern contrasts, depending on the charging effect, were obtained under different observation conditions. The impact of captured-image contrast on defect detection capability was examined using different types of inspection algorithm. It was found that the accuracy of critical dimension measurement, effectiveness of the charge suppression technique, and defect detection capability of the SEM tool, and its robustness could all be evaluated using this standard sample with a particular stacked structure.

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Enhanced defect detection capability using learning system for extreme ultraviolet lithography mask inspection tool with projection electron microscope optics

Cited by 2 publications

References 22 publications

Fabricating programmed micro-defects on a line and space pattern with an ultra-low line edge roughness <1 nm

Fabricating programmed micro-defects on a line and space pattern with an ultra-low line edge roughness <1 nm

Optimized structure of standard sample with programed defects for pattern inspection using electron beams

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Enhanced defect detection capability using learning system for extreme ultraviolet lithography mask inspection tool with projection electron microscope optics

Cited by 2 publications

References 22 publications

Fabricating programmed micro-defects on a line and space pattern with an ultra-low line edge roughness <1 nm

Fabricating programmed micro-defects on a line and space pattern with an ultra-low line edge roughness <1 nm

Optimized structure of standard sample with programed defects for pattern inspection using electron beams

Contact Info

Product

Resources

About

Fabricating programmed micro-defects on a line and space pattern with an ultra-low line edge roughness <1 nm

Fabricating programmed micro-defects on a line and space pattern with an ultra-low line edge roughness <1 nm