Enhanced efficiency in GaInP/GaAs tandem solar cells using carbon doped GaAs in tunnel junction

Kim, Chang Zoo; Kim, Hogyoung; Song, Kiwon; Jun, Dong Hwan; Kang, Hyoungku; Park, Wonkyu; Ko, Chul Gi

doi:10.1016/j.mee.2009.09.014

Cited by 12 publications

(5 citation statements)

References 21 publications

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“…We then fabricated the GaInP/GaAs tandem solar cells grown on n-type GaAs substrates using both the Te and Si as an n-type dopant in the tunnel junction as described in the previous work [13]. In this structure, the n-typedoped GaAs layer was grown on the C-doped GaAs layer in the tunnel junction.…”

Section: Resultsmentioning

confidence: 99%

“…Although lots of research experiments have been carried out to develop GaAsbased solar cells, there exist relatively few reports concerning the investigation of Te-doped GaAs in the tunnel junction. In the previous work, we observed that C doping in the tunnel junction exhibits higher efficiency and lower series resistance than those of Zn doping in GaInP/GaAs tandem solar cells, with Si as an n-type dopant in the tunnel junction [13]. In this work, we describe the properties of Te-doped GaAs layers grown by MOCVD and the electrical characterization of the GaAs tunnel junction diodes.…”

Section: Introductionmentioning

confidence: 94%

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Te doping in the GaAs tunnel junction for GaInP/GaAs tandem solar cells

Kang

Park

Jun

et al. 2011

Semicond. Sci. Technol.

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Heavily tellurium (Te)-doped GaAs layers with diethyltellurium (DETe) grown by metalorganic chemical vapor deposition (MOCVD) were investigated. The existence of Te-rich microprecipitates might degrade both the electrical and optical properties. Compared to Si doping, the tunnel junction diode doped with Te doping revealed lower tunneling resistance. A comparative study using both Si and Te doping in the GaAs tunnel junction of GaInP/GaAs tandem solar cells showed a higher efficiency for Te doping. Therefore, the GaAs tunnel junction with Te doping can be considered to improve the device performance of GaAs-based multi-junction solar cells.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 94%

Te doping in the GaAs tunnel junction for GaInP/GaAs tandem solar cells

Kang

Park

Jun

et al. 2011

Semicond. Sci. Technol.

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“…This is most likely due to the desorption of C from the GaAs surface during cooling. 32) By comparing Te-and S-doped solar cells, the results suggest that S-doped GaAs cells had a higher J sc but a lower V oc than Te-doped samples. The mobility and lifetime of minority carriers in doped GaAs layers can possibly explain these behaviors.…”

Section: Results Of Gaas P-i-n Solar Cellsmentioning

confidence: 96%

Effects of various dopants on properties of GaAs tunneling junctions and p–i–n solar cells

Sodabanlu

Watanabe

Sugiyama

et al. 2017

Jpn. J. Appl. Phys.

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Several GaAs tunneling junctions (TJs) and p–i–n single junction solar cells grown using a planetary metalorganic vapor phase epitaxy (MOVPE) reactor utilizing various dopant species including Zn, C, S, and Te were investigated. The incorporation of Te atoms into GaAs was approximately two orders larger than that of S atoms. Although only 30% of Te atoms could be electrically activated, a carrier concentration of 1019 cm−3 was achieved. Highly C-doped GaAs was successfully obtained by decreasing the growth temperature and increasing the amount of H2 carrier gas in order to prevent the predecomposition of CBr4 dopant gas. A hole concentration of about 1020 cm−3 was realized with a growth temperature of 450 °C. The C–Te-doped GaAs TJ exhibited the best ohmic tunneling behavior with a resistivity of 12.5 mΩ·cm2, while the others had diode characteristics. The GaAs solar cell grown with the Zn–S dopant showed the highest conversion efficiency ascribed to a longer minority carrier lifetime.

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“…By varying the deposition temperature, the fabricated solar cell was characterized in dark and under illumination conditions. In a dark surrounding, the cell shows very slight rectifying characteristic (Figure 5 cell efficiency = ( oc )( sc )(FF)/( ph ) [32] where is the overall efficiency, sc is the short circuit current density, oc is the open circuit voltage, and ph is the incident photon flux which was determined to be 0% for all samples. However, when being illuminated under AM 1.5 SUN condition (100 mW/cm 2 , 25 ∘ C) a rectifying curve was obtained as in Figure 5(b).…”

Section: Resultsmentioning

confidence: 99%

New Method of Depositing the Nanostructured Amorphous Carbon for Carbon Based Solar Cell Applications

Fadzilah

Dayana

Rusop

2013

International Journal of Photoenergy

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Nanostructured amorphous carbon (a-C) solar cells were successfully deposited via a self-designed aerosol-assisted chemical vapor deposition (AACVD). The fabricated solar cell with the configuration of Au/p-C/n-Si/Au achieved efficiency ( ) of 1.72 × 10 −4 % for device deposited at 500 ∘ C, 1.24 × 10 −4 % for 450 ∘ C, and 0.03 × 10 −4 % for 400 ∘ C. Photoresponse characteristic was highlighted under illumination (AM 1.5 illuminations: 100 mW/cm 2 , 25 ∘ C), where conductivity increased when the sample was being hit by light. Transmittance spectrum exhibits a large transmittance value (>85%) and absorption coefficient value of 10 4 cm −1 at the visible range from 390 to 790 nm. The nanostructured a-C thin film deposited at higher temperature possesses lower transmittance due to higher absorption as a result of the higher content of sp 2 -bonded carbon atoms. From Tauc's plot, optical band gap ( ) was determined, and decreased as deposition temperature increased (1.2 eV, 1.0 eV, 0.7 eV). On the other hand, FESEM images exhibited a nanostructured sized a-C with the particle size less than 100 nm. To the best of our knowledge, the presence of nanostructured particle of a-C by a self-prepared AACVD has not frequently been reported.

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Enhanced efficiency in GaInP/GaAs tandem solar cells using carbon doped GaAs in tunnel junction

Cited by 12 publications

References 21 publications

Te doping in the GaAs tunnel junction for GaInP/GaAs tandem solar cells

Te doping in the GaAs tunnel junction for GaInP/GaAs tandem solar cells

Effects of various dopants on properties of GaAs tunneling junctions and p–i–n solar cells

New Method of Depositing the Nanostructured Amorphous Carbon for Carbon Based Solar Cell Applications

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