Enhanced electron field emission from preferentially oriented graphitic films

Abstract

The electron field emission properties of nanographite films, whose basal planes display a degree of preferred orientation perpendicular to the surface, are reported. It was found that nanometric thick films which display a high degree of preferred orientation perpendicular to the substrate emit electrons at a high turn on field (TOF), while thicker films which display a much lower degree of preferred orientation emit electrons at a significantly lower TOF. It is suggested that the observed effect is mainly associated with the degree of basal planes orientation of the nanostructures and not just to their length.

Laser‐induced self organization of silicon–germanium hillocks for field emission displays

“…The electron emission results are reproducible over several measurement cycles and independent of the vacuum gap. The emission threshold for sample 1 is similar to the one reported for single-crystal Si tips [11,12], polycrystalline Si tips [11,13,14], Si nanowires [15], graphite films [16], and is higher then the typical values of 2-5 V/µm reported for carbon nanotubes [17]. The data plotted in Fig.…”

Potential barrier of graphene edges

“…2 material [14][15][16][17][18][19][20]. The work function is the most important feature of the edge (surface) potential.…”

Potential barrier and band structure of closed edge graphene

“…[2][3][4] Experiments of field emission show that graphene is also a good field emission material. [5][6][7][8][9][10][11][12] Field emission (FE) from graphene has significant potential for application in CFE. Recently, well controlled edge tailoring becomes possible.…”