Enhanced Field‐Emission Behavior of Layered MoS₂ Sheets

Abstract

Field emission studies are reported for the first time on layered MoS₂ sheets at the base pressure of ∼1 × 10⁻⁸ mbar. The turn-on field required to draw a field emission current density of 10 μA/cm² is found to be 3.5 V/μm for MoS₂ sheets. The turn-on values are found to be significantly lower than the reported MoS₂ nanoflowers, graphene, and carbon nanotube-based field emitters due to the high field enhancement factor (∼1138) associated with nanometric sharp edges of MoS₂ sheet emitter surface. The emission current-time plots show good stability over a period of 3 h. Owing to the low turn-on field and planar (sheetlike) structure, the MoS₂ could be utilized for future vacuum microelectronics/nanoelectronic and flat panel display applications.

Ultrathin Single‐Crystalline Boron Nanosheets for Enhanced Electro‐Optical Performances

“…Notably, a turn‐on current density (10 μA cm −2 ) at a macroscopic field of as low as 3.60 V μm −1 and a high FE current density of 7.47 mA cm −2 at a macroscopic field of 5.80 V μm −1 can be read from Figure 3b. The results indicate that the UBNSs are ideal field emitters of high efficiency, which can surpass or comparable with B nanowires,[[qv: 12e]] LaB 6 /NdB 6 nanorods,25 B 4 C nanowires,26 CdS nanobelts,27 MoS 2 sheets,28 and graphene 29…”

Metallic Few‐Layer Flowerlike VS2 Nanosheets as Field Emitters

“…[36] The field-emission characteristics of a few layered MoS 2 nanosheets indicate that the presence of atomically sharp, protruding edges of sheets locally enhance the electric field, which in turn leads to enhanced field emission. [36] However, field-emission investigations of most of the abovementioned TMDs are sparse in the literature, because it is difficult to synthesize these layered materials in a 2D sheetlike morphology.…”

Monolayer MoSe2 Grown by Chemical Vapor Deposition for Fast Photodetection

“…7,8 These layer materials exhibit many distinctive characteristics such as outstanding flexibility, 9 moderate carrier mobility, 10,11 and layer-dependent electronic and optical properties. [12][13][14][15][16][17][18][19][20] Thus, the TMD materials can serve as transparent and flexible field-effect transistors (FETs), [21][22][23][24] photodetectors, 25 photovoltaic cells, 26,27 light-emitting diodes 28,29 and catalysts. [30][31][32] In particular, TMD materials have been reported to absorb up to 5−10% of incident sunlight within a thickness less than 1 nm, which is about 1 order of magnitude higher absorption than GaAs and Si.…”