2012
DOI: 10.1088/0957-4484/23/27/275706
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Enhanced first-order Raman scattering from arrays of vertical silicon nanowires

Abstract: Vertical ordered silicon nanowire arrays with diameters ranging from 30 to 60 nm are fabricated and display enhanced Raman scattering. The first-order 520 cm(-1) phonon mode shows no significant shift or peak broadening with increasing laser power, suggesting that the excellent defect-free diamond crystalline structure and thermal properties of bulk silicon are maintained. The Raman enhancement per unit volume of the first-order phonon peak increases with increasing nanowire diameter, and has maximum enhanceme… Show more

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Cited by 70 publications
(54 citation statements)
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“…A correlation between conjugation length and the relative intensity of the peaks at 1440 cm ¹1 was found. Improvement of Raman scattering with diameter decrease and morphology dependence have been also evidenced when studying Si nanowires (SiNW), 42 which agrees with the results obtained in the current study.…”
Section: ¹1supporting
confidence: 91%
“…A correlation between conjugation length and the relative intensity of the peaks at 1440 cm ¹1 was found. Improvement of Raman scattering with diameter decrease and morphology dependence have been also evidenced when studying Si nanowires (SiNW), 42 which agrees with the results obtained in the current study.…”
Section: ¹1supporting
confidence: 91%
“…The resonance diameter was observed in this study because of the small increments in diameter used, as opposed to the larger increments studied in previous works. Previous Raman scattering studies on vertically oriented crystalline silicon nanowires arranged in square lattices [19,20] have not shown any local heating, even at laser input intensities an order of magnitude higher than the one used in this study. This result confirms that lower thermal conductivities are seen in GaAs nanowires as compared to Si nanowires.…”
Section: Resultscontrasting
confidence: 60%
“…As a comparison, a temperature increase of 50 K was observed in single wall carbon nanotubes embedded in polydimethylsilicate substrate for an incident intensity of 318 mW/mm 2 [4]. The large Raman scattering enhancement is an indication of strong electric field confinement within the nanowires [19,20], leading to higher temperatures. The resonance diameter was observed in this study because of the small increments in diameter used, as opposed to the larger increments studied in previous works.…”
Section: Resultsmentioning
confidence: 94%
“…Lift-off is carried out by soaking the sample in a solvent stripper (remover PG from Microchem). Inductively coupled plasma-reactive ion etching (ICP-RIE) is performed to etch the nanoridges [32]. The passivation layer generated during the etching process is removed by placing the device in an oxygen plasma (power: 150 W) for 5 min.…”
Section: A Experimental Demonstration Of Polarization-dependent Scatmentioning
confidence: 99%