Enhanced leakage current performance and conduction mechanisms of Bi1.5Zn1.0Nb1.5O7/Ba0.5Sr0.5TiO3 bilayered thin films

Li, Ruguan; Jiang, Shuwen; Gao, Libin; Li, Yanrong

doi:10.1063/1.4757952

Cited by 15 publications

(3 citation statements)

References 23 publications

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“…the capacitor displays varistor-like behavior. This phenomenon is in accordance with Schottky emission theory [22]. Similar behavior is observed by Dietz et al [23].…”

Section: Methodssupporting

confidence: 78%

Effect of rf power on the dielectric properties of bismuth magnesium niobium titanium thin films deposited by RF magnetron sputtering

Sun

Zhang

et al. 2014

J Mater Sci: Mater Electron

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The Bi 1.5 Mg 0.5 Nb 0.5 Ti 1.5 O 7 (BMNT) thin films with cubic pyrochlore structure were prepared on ITO substrates by RF magnetron sputtering. The effect of rf power on the dielectric properties of BMNT thin films were investigated. As the rf power increases, the crystallinity becomes better, the dielectric properties and tunability have an obvious improvement. The BMNT thin film deposited at 250 W exhibited dielectric constant of 105, the tunability of 33, low tangent loss of 0.0035, and the largest FOM of 361.89. The relationship of leakage current and thickness was also studied and a possible explanation was proposed. The excellent dielectric properties make BMNT thin films promising for potential tunable capacitor applications.

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“…the capacitor displays varistor-like behavior. This phenomenon is in accordance with Schottky emission theory [22]. Similar behavior is observed by Dietz et al [23].…”

Section: Methodssupporting

confidence: 78%

Effect of rf power on the dielectric properties of bismuth magnesium niobium titanium thin films deposited by RF magnetron sputtering

Sun

Zhang

et al. 2014

J Mater Sci: Mater Electron

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“…The SE occurs when electrons are injected from the electrode to dielectric by overcoming an energy barrier, and the PFE is usually dominant at high temperatures due to a thermally activated detrapping process . These two mechanisms can be described by the following equations: J SE and J PFE are the current density of the SE and PFE mechanisms, respectively.

J_{normalSE} = A T^{2} exp false[- \frac{normalϕ - \sqrt{q^{3} E false/ 4 normalπ ε_{0} K}}{K_{B} T} false],

J_{normalPFE} = B E exp false[- \frac{E_{1} - \sqrt{q^{3} E false/ normalπ ε_{0} K}}{K_{B} T} false],

where A and B are constant, T is the temperature in Kelvin, E is the electric field at the metal/oxide interface, ϕ and E I are the Schottky barrier height and trap ionization energy, respectively, q is the electronic charge, ε 0 is the permittivity of free space, K B is the Boltzmann constant, and K is the optical dielectric permittivity.…”

Section: Resultsmentioning

confidence: 99%

The Effects of Annealing Atmosphere on the Electrical Properties of MgNb₂O₆/ITO Heterostructures

Chen

et al. 2014

J. Am. Ceram. Soc.

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The effects of annealing atmosphere (N2, air and O2) on the electrical properties of sol–gel‐derived MgNb2O6/ITO heterostructures are discussed in this work. All samples exhibited the amorphous phase and were highly transparent. The percentage of Nb4+ content increased when the films were annealed in the oxygen‐deficient conditions, which could lead to semiconducting films. In addition, the results show that the electrical properties of sol–gel‐derived MgNb2O6 thin films could be tuned based on the annealing atmosphere. Moreover, the conduction mechanisms of MgNb2O6/ITO heterostructures are also discussed in this study. The results show that MgNb2O6 thin films have potential for use in multifunctional optoelectronic applications, due to their flexible electrical properties and good transparency.

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“…When the applied voltage is large enough, the barrier allows electrons with sufficient energy to tunnel, and then FN tunneling dominates the current [44]. FN tunneling can be expressed as [45]:…”

Section: Resultsmentioning

confidence: 99%

Fowler-Nordheim tunneling in β-Ga₂O₃/SrRuO₃ Schottky interfaces

Li¹,

Ji²,

Pan³

et al. 2022

J. Phys. D: Appl. Phys.

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Interfaces in heterostructures always emerge as prototype electronic devices with tunable functionality. Fundamental properties of the interfaces can be finely manipulated by epitaxy engineering. Recently, the heterostructures based on Ga2O3, an ultra-wide bandgap semiconductor, are reported for high power devices applications. Herein, we demonstrate a heterostructure of β-Ga2O3/SrRuO3 integrated on c-plane sapphire, the high density of edge dislocations is evidenced in the heterostructure interfaces. Apart from the dominated Schottky emission mechanism, the Fowler-Nordheim tunneling is also revealed by the leakage current analysis, which may be ascribed to the edge dislocations at the interfaces. These results boost the basic understanding on the ultra-wide bandgap materials and devices.

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Enhanced leakage current performance and conduction mechanisms of Bi1.5Zn1.0Nb1.5O7/Ba0.5Sr0.5TiO3 bilayered thin films

Cited by 15 publications

References 23 publications

Effect of rf power on the dielectric properties of bismuth magnesium niobium titanium thin films deposited by RF magnetron sputtering

Effect of rf power on the dielectric properties of bismuth magnesium niobium titanium thin films deposited by RF magnetron sputtering

The Effects of Annealing Atmosphere on the Electrical Properties of MgNb₂O₆/ITO Heterostructures

Fowler-Nordheim tunneling in β-Ga₂O₃/SrRuO₃ Schottky interfaces

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Enhanced leakage current performance and conduction mechanisms of Bi1.5Zn1.0Nb1.5O7/Ba0.5Sr0.5TiO3 bilayered thin films

Cited by 15 publications

References 23 publications

Effect of rf power on the dielectric properties of bismuth magnesium niobium titanium thin films deposited by RF magnetron sputtering

Effect of rf power on the dielectric properties of bismuth magnesium niobium titanium thin films deposited by RF magnetron sputtering

The Effects of Annealing Atmosphere on the Electrical Properties of MgNb2O6/ITO Heterostructures

Fowler-Nordheim tunneling in β-Ga2O3/SrRuO3 Schottky interfaces

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The Effects of Annealing Atmosphere on the Electrical Properties of MgNb₂O₆/ITO Heterostructures

Fowler-Nordheim tunneling in β-Ga₂O₃/SrRuO₃ Schottky interfaces