Enhanced light collection from a gallium nitride color center using a near index-matched solid immersion lens

Abstract

Among wide-bandgap compound semiconductors, gallium nitride is the most widely available material due to its prevalence in the solid state lighting and high-speed/high-power electronics industries. It is now known that GaN is one of only a handful of materials to host color centers that emit quantum light at room temperature. In this paper, we report on a bright color center in a semi-polar gallium nitride substrate emitting at room temperature in the near-infrared. We show that a hemispherical solid immersion lens, near index matched to the semiconductor, can be used to enhance the photon collection efficiency by a factor of 4.3 ± 0.1 while improving the lateral resolution by a factor equal to the refractive index of the lens.

GaN as a Material Platform for Single‐Photon Emitters: Insights from Ab Initio Study

“…It is obvious that our measured and simulated results coincide well with the previously reported work. [16][17][18][29][30][31]…”

Evanescent-field assisted photon collection from quantum emitters under a solid immersion lens

“…An air gap can arise from a non-flat back surface of the SIL and/or a non-flat surface of the semiconductor. To prevent such a gap, we add a thin layer of a polymer, PMMA, which is soft enough to fill the gap between the SIL and AlN adapting to their surfaces, in line with other reports [12,21]. Three samples of AlN-on-sapphire from the same wafer were studied.…”

“…Additionally, aplanatic imaging is achieved due to the normal incidence of light at the SIL-air interface as shown in figure 1(a). The NA of the imaging system is therefore increased by the refractive index within the semiconductor, reducing the axial and lateral size of both the excitation and collection point-spread functions by a factor of the SIL refractive index and the square of the index, respectively, relative to imaging through a flat interface [21].…”

“…The NA of the imaging system is therefore increased by the refractive index within the semiconductor, reducing the axial and lateral size of both the excitation and collection point-spread functions by a factor of the SIL refractive index and the square of the index, respectively, relative to imaging through a flat interface. 21 The CE may be analytically estimated from Barnes et al 14 considering a dipole orientated in the plane of an infinite AlN slab. 19 The blue and green plots with filled symbols in Fig.…”

Robust Heteroepitaxial Growth of GaN Formulated on Porous TiN Buffer Layers

“…Group III nitride semiconductor materials have gained substantial attention due to their wide-range applications in power electronic devices, optoelectronics, piezoelectric-based surface acoustic wave devices, and various related technologies. These devices exhibit impressive properties, including high electron mobility, adjustable direct band gaps, a high breakdown voltage, and polarization benefits. − Especially, gallium nitride (GaN) has been extensively investigated and stands out due to exceptional chemical and physical stability, enabling GaN to be an ideal semiconductor for use in harsh conditions. , Despite the ongoing challenges in elucidating crystal growth mechanisms, GaN is arguably the most commercially important wide band-gap semiconductor (approximately 3.4 eV) since silicon (Si) and germanium (Ge); the prevalence of the GaN development in high-power electronics and solid-state lighting industries proves its importance. , Thus, many studies continue to explore the growth mechanism of GaN ,− while also developing complementary logic integrated circuits, broadband photodetectors, − and flexible and versatile electronics. , …”