Enhanced Light Output of GaN-Based Light-Emitting Diodes With Embedded Voids Formed on Si-Implanted GaN Layers

Abstract

GaN-based LEDs grown on Si-implanted GaN templates form air gaps beneath the active layer to enhance lightextraction efficiency. GaN-based epitaxial layers grown on selective Si-implanted regions had lower growth rates compared with those grown on implantation-free regions, resulting in selective growth and the subsequent over the Si-implanted regions. Accordingly, air gaps were formed over the Si-implanted regions after the meeting of laterally growing GaN facet fronts. The experimental results indicate that the light-output power of the LEDs grown on the Si-implanted GaN templates was enhanced by 36% compared with conventional LEDs. This enhancement in output power was attributed mainly to the air gaps, which led to a higher escape probability for the photons.

Effects of Nano- and Microscale SiO2 Masks on the Growth of a-Plane GaN Layers on r-Plane Sapphire

“…These voids can enhance the light-output power of LEDs via the scattering of light. [19][20][21][22] Figure 3 shows AFM images of a-plane GaN layers. The boundaries of nano-and microscale masks are marked with dashed lines in Figs.…”

Cavity Mode-Matching InGaN Aperture-Emitting Device with a Nanoporous GaN Reflector via Ion Implantation

“…Gallium nitride resonant-cavity light-emitting diodes (RC-LEDs) and vertical-cavity surface-emitting lasers (VCSELs) are promising for next-generation displays and portable electronics. For the ion implantation methods on GaN materials, H + -implanted RC-LED structures, , Mg + -implanted current blocking layer adoption, embedded void structures via Si-implanted GaN templates, and P ion implantation to improve Mg dopant activation in a p-GaN layer have been reported for light output power enhancement. Gallium nitride VCSELs with curved dielectric distributed Bragg reflector (DBR) and B ion implantation techniques have been investigated for carrier and lateral optical confinement. − Semipolor GaN blue VCSEL devices with a buried tunnel junction design and Al ion implantation were also demonstrated to discuss polarization and filamentary lasing .…”

Improved conversion efficiency of GaN-based solar cells with Mn-doped absorption layer

“…ITO film was deposited on the n þ -InGaN layer to form the p-type ohmic contact. 21,22 A Cr/Au bi-layer metal was simultaneously deposited on the exposed n þ -GaN layer and the ITO layer to form the cathode and anode electrodes, respectively. 23 The mesa area of the fabricated solar cell devices was 0.005 cm 2 .…”