Enhanced optical and electrical properties of NiO thin films prepared by rapid radiation pyrolysis method based on the sol–gel technique

Wang, N.; Liu, C.Q.; Wen, Bin; Wang, H.L.; Liu, S.M.; Chai, Weiping

doi:10.1016/j.matlet.2014.02.040

Cited by 30 publications

(8 citation statements)

References 11 publications

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“…The above procedure lasted eight times for every film. The homemade tube furnace was described in our previous work [25]. Finally, the precursor NiO‐based films were annealed in a tube resistance furnace at 500°C for 1 h to further promote Cu ion into the lattice site of NiO.…”

Section: Methodsmentioning

confidence: 99%

“…For NiO film, there are many preparation techniques, such as electrochemical deposition [19, 22], magnetron sputtering [16, 20], spray pyrolysis [23, 24] and sol–gel [13, 17, 21, 25]. The sol–gel process has many advantages, such as low cost, easy handling and excellent compositional control.…”

Section: Introductionmentioning

confidence: 99%

“…Moreover, our previous work indicated that the sol–gel method based on the rapid pyrolysis process can hold substantial point defects in prepared film, so this method can improve the electrical properties of the prepared film [25].…”

Section: Introductionmentioning

confidence: 99%

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Effects of Cu doping on the properties of NiO film fabricated using the sol–gel method based on the rapid pyrolysis process

Song

Liu

Wang

et al. 2020

Micro & Nano Letters

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The sol-gel method based on the rapid pyrolysis process was adopted to prepare Ni 1−x Cu x O (x = 0-0.1) films on glass substrates. The effects of Cu doping on the structural, morphological, electrical and optical properties of the films were characterised by X-ray diffractometer, scanning electron microscope, Hall effect instrument and ultraviolet-visible spectrophotometer, respectively. The NiO-based films have a cubic rock salt structure and it was found that the film with x = 0.06 should have minimal residual stress. The transmittance and bandgap of the films decreased with increasing Cu-doping concentration. In addition, the compactness of the films increased along with the increase of Cu-doping concentration as a whole. The carrier concentration of the films was almost invariable, but the carrier mobility was determined by the competition between the effects of the morphology and the ionised impurity scattering. The resistivity of the films first decreases and then increases, and the minimum resistivity was 182.1 Ω cm at x = 0.06.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Effects of Cu doping on the properties of NiO film fabricated using the sol–gel method based on the rapid pyrolysis process

Song

Liu

Wang

et al. 2020

Micro & Nano Letters

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“…However, in the past years, NiO was used as a gas sensing due to their high optical transparency and good electrical conductivity. So for, NiO have been widely investigated as thin films for optoelectronic and photovoltaic applications such as sensors 8 , fuel cell electrodes 9 , catalysis 10 , thermoelectric devices 11 , and dye-sensitized solar cells (DSSCs) 12 and electrochromic material for displays 13 . Wu Chia-Ching and Yang Cheng-Fu 14 investigated the effect of Li doping on structural, optical and electrical properties of Li doped NiO thin films by spray pyrolysis technique.…”

Section: Introductionmentioning

confidence: 99%

Preparation and Characterizations of Monocrystalline Na Doped NiO Thin Films

et al. 2018

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In the present work, the effect of Na doping on optical, structural and electrical properties of Na doped NiO thin films were studied. The spray pneumatic method was used to deposit the Na doped NiO thin films in the range 0 to 5 wt.%, it are investigated at a substrate temperature of 420 °C with NiO solution 0.1 M. Firstly in the XRD specra, as found that a only (111) peak was observed for Na doped NiO thin film indicate that the Na doped NiO thin films a monocrystalline in nature with cubic structure. The maximum crystallite size of Na doped NiO thin films was 18.90 nm at 3 wt.%. Secondary, the optical transmissions spectra Na doped NiO thin films having a high transparency with comparing to undoped film in visible region. The band gap energy was decreased after doping by Na and reaching a minimum value is 3.53 eV at 2 wt.%. The minimum value of Urbach energy was 0.312 eV, it is obtained at 3 wt.%. In the end, the minimum electrical resistance of the Na doped NiO films was located at 5 wt.%. The optimum Na doping amount is achieved at 3 at %.

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“…It is evident that the improvement of the material properties can be reached by the optimization of the preparation conditions. In recent years, there are several methods could be used to prepare NiO thin films, which involve magnetron sputtering, plasma-enhanced chemical vapor deposition, electron beam evaporation, spray pyrolysis, sol-gel deposition, chemical bath deposition, atomic layer deposition (ALD), pulsed laser deposition, etc [12][13][14][15][16][17]. Among these methods, magnetron sputtering has been most widely useful technique having high deposition rates, uniformity over large areas of the substrates and easy control over the composition of the deposited films.…”

Section: Introductionmentioning

confidence: 99%

Characterizations of nickel oxide thin films prepared by reactive radio frequency magnetron sputtering

Xiao¹,

Xia²,

Xu³

et al. 2015

Proceedings of the 5th International Conference on Advanced Design and Manufacturing Engineering

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The NiO thin films were preapred by reactive radio frequency magnetron sputtering method on glass substrates. The influence of sputtering power on the crystal structure, surface morphological, optical and electrical properties was investigated using X-ray diffraction (XRD), scanning electron microscopy (SEM), ultraviolet-visible spectrophotometer (UV-VIS) and Hall effect tester, respectively. The as-preapred NiO thin films are polycrystalline with preferred orientation growth along (200) plane and have very high optical transmittances more than 60 %. All samples have a columnar structure with growth perpendicular to the film surface, and are dense, and homogeneous. With the increase of the sputtering power, a growth mode transformation appears from island growth to layer growth. The lowest resistivity of 2.4 Ω·cm could be obtained in our samples. An optimization electrical properties of the films can be achieved by the variation of crystal quality arises from the sputtering power.

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Enhanced optical and electrical properties of NiO thin films prepared by rapid radiation pyrolysis method based on the sol–gel technique

Cited by 30 publications

References 11 publications

Effects of Cu doping on the properties of NiO film fabricated using the sol–gel method based on the rapid pyrolysis process

Effects of Cu doping on the properties of NiO film fabricated using the sol–gel method based on the rapid pyrolysis process

Preparation and Characterizations of Monocrystalline Na Doped NiO Thin Films

Characterizations of nickel oxide thin films prepared by reactive radio frequency magnetron sputtering

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