2019
DOI: 10.1063/1.5064832
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Enhanced optical Kerr nonlinearity of graphene/Si hybrid waveguide

Abstract: In this work, we experimentally study the optical kerr nonlinearities of graphene/Si hybrid waveguides with enhanced self-phase modulation. In the case of CMOS compatible materials for nonlinear optical signal processing, Si and silicon nitride waveguides have been extensively investigated over the past decade. However, Si waveguides exhibit strong two-photon absorption (TPA) at telecommunication wavelengths, which lead to a significant reduction of nonlinear figure of merit. In contrast, silicon nitride based… Show more

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Cited by 86 publications
(67 citation statements)
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References 57 publications
(45 reference statements)
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“…[ 8,25 ] The giant Kerr nonlinear response of 2D layered materials such as graphene, graphene oxide (GO), black phosphorus, and transition metal dichalcogenides (TMDCs) has been widely recognized and exploited to implement diverse nonlinear photonic devices with high performance and new capabilities. [ 25–35 ] In particular, a 6.8 dB enhancement in the FWM CE was reported for a silicon MRR incorporating a monolayer of doped graphene. [ 31 ]…”
Section: Introductionmentioning
confidence: 99%
“…[ 8,25 ] The giant Kerr nonlinear response of 2D layered materials such as graphene, graphene oxide (GO), black phosphorus, and transition metal dichalcogenides (TMDCs) has been widely recognized and exploited to implement diverse nonlinear photonic devices with high performance and new capabilities. [ 25–35 ] In particular, a 6.8 dB enhancement in the FWM CE was reported for a silicon MRR incorporating a monolayer of doped graphene. [ 31 ]…”
Section: Introductionmentioning
confidence: 99%
“…Four steps for the in-situ assembly of monolayer GO films were repeated to construct multilayer films on the SOI nanowire. Our GO coating approach, unlike the sophisticated transfer processes employed for coating other 2D materials such as graphene and TMDCs [33,34], enables transfer-free GO film coating on integrated photonic devices, with highly scalable fabrication processes and precise control of the number of GO layers (i.e., GO film thickness).…”
Section: Device Fabricationmentioning
confidence: 99%
“…The τc term in Eq. (7) can be ignored since the pulse duration (~3.9 ps) is much less than τc so that the generated free carriers do not have time to recombine within the pulse duration [34,49]. The measured EIL of the bare SOI nanowire as a function of the coupled pulse energy is shown in Figure 7(a) along with the fit EIL calculated from Eqs.…”
Section: Spm Spectral Broadeningmentioning
confidence: 99%
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“…The giant Kerr nonlinear response of two-dimensional (2D) layered materials such as graphene, graphene oxide (GO), black phosphorus, and transition metal dichalcogenides (TMDCs) has been widely recognized and exploited to implement diverse nonlinear photonic devices with high performance and new capabilities [25][26][27][28][29][30][31][32][33][34][35]. In particular, a 6.8-dB enhancement in the FWM CE was reported for a silicon MRR incorporating a monolayer of doped graphene [31].…”
Section: Introductionmentioning
confidence: 99%