Enhanced Performance of Printed Organic Diodes Using a Thin Interfacial Barrier Layer

Lilja, Kaisa E.; Majumdar, Himadri S.; Pettersson, Fredrik; Österbacka, Ronald; Joutsenoja, Timo

doi:10.1021/am1009869

Cited by 24 publications

(28 citation statements)

References 20 publications

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“…The log J-log V -characteristics of the diodes with evaporation-deposited [Cu respectively [7], do not explain the difference in the current levels. Therefore, we argue that an additional interfacial effect is responsible for the observed high rectification ratio in the Cu(s) diodes.…”

Section: Resultsmentioning

confidence: 86%

“…Figure 3 represents the Al Kα -excited survey spectra and Cu LMM transitions of the Cu(e) and Cu(s) surfaces. As shown in figure 3(a) Previously we speculated that the organic layer would be PET coming from the substrate in the sputter-deposition process [7]. However, the recent XPS results show that the C-C/C-O and C-C/C=O ratios in the organic layer on Cu(s) and Cu(e) are higher than on a PET reference.…”

Section: Resultsmentioning

confidence: 99%

“…Since the measured work functions of Cu, printed Ag and the HOMO of PTAA are quite similar (4.8 -5.2 eV) [7], charge carriers should be injected from both the electrodes under proper bias conditions. If there would be pinholes or islands in the interfacial layer, that would lead to leakage current due to injection from Cu in the order similar to what was observed for injection from Ag.…”

Section: Resultsmentioning

confidence: 99%

“…Previously we observed indications of an organic layer covering the surface of the Cu(s) substrate [7]. This analysis was based on the survey spectrum, C 1s and O 1s peaks of the XPS signal intensity with binding energies from 0 to 1100 eV.…”

Section: Resultsmentioning

confidence: 99%

“…Recently we showed that processing and device architecture have a significant effect on the performance of printed organic diodes with one or more Schottky contacts [7]. The diodes exhibited very low currents under reverse bias despite the low Schottky barrier.…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

Effect of dielectric barrier on rectification, injection and transport properties of printed organic diodes

Lilja

Majumdar

Lahtonen

et al. 2011

J. Phys. D: Appl. Phys.

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To cite this version:K E Lilja, H S Majumdar, K Lahtonen, P Heljo, S Tuukkanen, et al.. Effect of dielectric barrier on rectification, injection and transport properties of printed organic diodes. Journal of Physics D: Applied Physics, IOP Publishing, 2011, 44 (29) Author to whom any correspondence should be addressed.Abstract. Rectification ratios of 10 5 were observed in printed organic copper/polytriarylamine (PTAA)/silver diodes with a thin insulating barrier layer at the copper/PTAA interface. To clarify the origin of the high rectification ratio in the diodes, the injection, transport and structure of the diodes with two different copper cathodes were examined using impedance spectroscopy and X-ray photoelectron spectroscopy (XPS). The impedance data confirm that the difference in diode performance arises from the copper/PTAA interface. The XPS measurements show that the copper surface in both diode structures is covered by a layer of Cu 2 O topped by an organic layer. The organic layer is thicker on one of the surfaces, which results in lower reverse currents and higher rectification ratios in the printed diodes. We suggest a model where a dipole at the dual insulating layer induces a shift in the semiconductor energy levels explaining the difference between the diodes with different cathodes.

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Section: Resultsmentioning

confidence: 86%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Effect of dielectric barrier on rectification, injection and transport properties of printed organic diodes

Lilja

Majumdar

Lahtonen

et al. 2011

J. Phys. D: Appl. Phys.

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A Mechanically Durable and Flexible Organic Rectifying Diode with a Polyethylenimine Ethoxylated Cathode

Matsuhisa

Sakamoto

Yokota

et al. 2016

Adv Elect Materials

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A mechanically durable and air stable organic rectifier diode is demonstrated, taking advantage of face‐on grown copper phthalocyanine and a polyethylenimine ethoxylated/Au cathode. The current density reaches 20 A cm−2 at 2 V with a rectification ratio of 6.5 × 107 and the diode is mechanically robust, even against folding. Imaging of the pressure distribution on a foot during stepping is realized.

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Printed, Highly Stable Metal Oxide Thin‐Film Transistors with Ultra‐Thin High‐κ Oxide Dielectric

Carlos

Leppäniemi

Sneck

et al. 2020

Adv Elect Materials

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Lately, printed oxide electronics have advanced in the performance and low‐temperature solution processability that are required for the dawn of low‐cost flexible applications. However, some of the remaining limitations need to be surpassed without compromising the device electronic performance and operational stability. The printing of a highly stable ultra‐thin high‐κ aluminum‐oxide dielectric with a high‐throughput (50 m min−1) flexographic printing is accomplished while simultaneously demonstrating low‐temperature processing (≤200 °C). Thermal annealing is combined with low‐wavelength far‐ultraviolet exposure and the electrical, chemical, and morphological properties of the printed dielectric films are studied. The high‐κ dielectric exhibits a very low leakage‐current density (10−10 A cm−2) at 1 MV cm−1, a breakdown field higher than 1.75 MV cm−1, and a dielectric constant of 8.2 (at 1 Hz frequency). Printed indium oxide transistors are fabricated using the optimized dielectric and they achieve a mobility up to 2.83 ± 0.59 cm2 V−1 s−1, a subthreshold slope <80 mV dec−1, and a current ON/OFF ratio >106. The flexible devices reveal enhanced operational stability with a negligible shift in the electrical parameters after ageing, bias, and bending stresses. The present work lifts printed oxide thin film transistors a step closer to the flexible applications of future electronics.

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Enhanced Performance of Printed Organic Diodes Using a Thin Interfacial Barrier Layer

Cited by 24 publications

References 20 publications

Effect of dielectric barrier on rectification, injection and transport properties of printed organic diodes

Effect of dielectric barrier on rectification, injection and transport properties of printed organic diodes

A Mechanically Durable and Flexible Organic Rectifying Diode with a Polyethylenimine Ethoxylated Cathode

Printed, Highly Stable Metal Oxide Thin‐Film Transistors with Ultra‐Thin High‐κ Oxide Dielectric

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