Enhanced response from metal/ZnO bilayer ultraviolet photodetector

Abstract

Articles you may be interested inEffects of annealing temperature on the characteristics of Ga-doped ZnO film metal-semiconductor-metal ultraviolet photodetectors Study of metal/ZnO based thin film ultraviolet photodetectors: The effect of induced charges on the dynamics of photoconductivity relaxation Influence of thin metal nanolayers on the photodetective properties of ZnO thin films Enhanced ultraviolet ͑UV͒ photoresponse is observed in rf magnetron sputtered ZnO thin films interfaced with ultrathin overlayers of different metals ͑Al, Cu, Sn, Pb, Au, and Te͒. Electrons transferred from a metal layer to the semiconductor at the interface compensate the surface states and increase the dark conductivity. Depending on the number of injected electrons, surface states are compensated to different extents and correspondingly increase the photoconductivity. The photoresponse of the Sn/ ZnO bilayer sample exhibits the highest responsivity ͑ϳ6 kV/W͒ at low UV intensity of 140 W/cm 2 ͑ = 365 nm͒ with a relatively fast response speed of 65 ms.

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