Enhanced sensitivity to direct current magnetic field changes in Metglas/Pb(Mg1/3Nb2/3)O3–PbTiO3 laminates

Gao, Junqi; Shen, Liangguo; Wang, Yaojin; Gray, David; Li, Jiefang; Viehland, Dwight

doi:10.1063/1.3569629

Cited by 73 publications

(28 citation statements)

References 14 publications

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“…DC magnetic field variations as small as H dc ¼ 15 nT could be detected under a 0.1 Oe, 1 kHz drive for the sensor with Metglas foils of 80 mm in length, similar to recent reports. 10 However, the DC magnetic field changes as small as 6 nT were detectable by using ME sensor with longer Metglas foils (100 mm); note that similar drive conditions were used. This represents a 250% increase in the DC field sensitivity.…”

Section: -mentioning

confidence: 99%

Enhanced dc magnetic field sensitivity by improved flux concentration in magnetoelectric laminates

Gao¹,

Gray²,

Shen³

et al. 2011

Applied Physics Letters

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In this letter, we present magnetostatic modeling results that show significant magnetic field concentration tunability through geometric modification of high-mu magnetostatic Metglas layers of laminate magnetoelectric (ME) sensors. Based on the modeling results, composite ME sensors were fabricated with longer Metglas foils and found to exhibit notably higher ME voltage coefficients at smaller DC magnetic biases in response to a 1 kHz driving signal. Such ME sensors have been used to detect DC magnetic field changes as small as 6 nT at 1 kHz, while maintaining a signal-to-noise ratio greater than 10. This represents an enhancement of ∼250% relative to values previously reported for Metglas/Pb(Zr,Ti)O3 laminates.

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Section: -mentioning

confidence: 99%

Enhanced dc magnetic field sensitivity by improved flux concentration in magnetoelectric laminates

Gao¹,

Gray²,

Shen³

et al. 2011

Applied Physics Letters

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“…6 Strain-mediated ME effects in bulk ferromagnetic/ferroelectric laminate materials were intensively developed by Ryu et al in the early 2001, 7 which represented a great step forward in the revival of ME materials with the highest value of 1100 V cm À1 Oe À1 in resonance conditions reported to date. 8 In the last decade, converse magnetoelectric effects have received an ever-increasing attention and provoked versatile proposals for development of multifunctional CME devices, 9,10 including tunable inductors, 11,12 RF/microwave opintronics, 13 MERAMs, 14 and coil-less flux switch. 15 For example, Chen et al demonstrated an electrically controlled magnetization switching in a FeCoV/PMN-PT [Pb(Mg 1/3 Nb 2/3 )O 3 -PbTiO 3 ] strain-mediated multiferroic heterostructure, exhibiting a maximum CME coupling of 2.2 Â 10 À7 sÁm À1 with the assistance of a magnetic bias field $160 Oe.…”

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confidence: 99%

Giant self-biased converse magnetoelectric effect in multiferroic heterostructure with single-phase magnetostrictive materials

Zhang

Wen

et al. 2014

Applied Physics Letters

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Giant self-biased converse magnetoelectric (CME) effects with obvious hysteretic behaviors are systematically investigated in two-phase SmFe2/PZT [Pb(Zr1−x, Tix)O3] multiferroic laminates at room temperature. Taking advantage of the huge anisotropic field of SmFe2 plate, large remnant CME coupling is provoked by this field instead of permanent magnets to bias the laminate. Consequently, bitable magnetization status switching is realized through a smaller ac voltage far below the electric coercive field in the absence of magnetic bias field. Experiments demonstrate that a large remnant CME coefficient (αCME) of 0.007 mG/V is achieved, exhibiting ∼50 times higher CME coefficient than the previous laminate composite multi-phase magnetostrictive plates. These results provide promising applications for realization of high-density magnetoelectric random access memories (MERAMs) devices with lower energy consumption.

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“…This figure shows that the cross-modulation scheme has the ability of transferring low frequency magnetic signal (1 Hz) to higher frequencies (29.499 kHz and 29.501 kHz), where the noise floor is much lower than that at low frequency. 26 Please note that the effectiveness of this frequency transfer is proportional to the nonlinear ME coefficient a Nonlin ME . This is the reason why in this paper we tried to determine the conditions under which the nonlinear ME coefficient a Nonlin ME was maximized.…”

Section: Furthermore Inspection Of Figs 4(c) and 4(d) Will Reveal Tmentioning

confidence: 99%

Magnetoelectric nonlinearity in magnetoelectric laminate sensors

Shen

Gao

et al. 2011

Journal of Applied Physics

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High-resolution current sensor utilizing nanocrystalline alloy and magnetoelectric laminate composite Rev. Sci. Instrum. 83, 115001 (2012) A nonlinearity in the magnetoelectric coefficient, a Nonlin ME , of Metglas=Pb(Zr,Ti)O 3 (PZT) and Metglas=Pb(Mg 1=3 ,Nb 2=3 )O 3 -PbTiO 3 (PMN-PT) laminate sensors has been observed. This nonlinearity was found to be dependent on the dc magnetic bias (H dc ) and frequency of the ac drive field (H ac ). The maximum value of a Nonlin ME for both types of composites was found near the electromechanical resonance. For Metglas=PZT laminates, the maximum occurred under a finite bias of H dc %5 Oe; whereas, for Metglas=PMN-PT, the maximum was found near zero dc bias. One application for a Nonlin ME is a cross-modulation scheme that can shift low frequency signals to higher frequency to achieve lower noise floor. For Metglas=PMN-PT, a Nonlin ME has another application: removal of the necessity of a dc bias, which helps to design high-sensitivity sensor arrays and gradiometers.

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Enhanced sensitivity to direct current magnetic field changes in Metglas/Pb(Mg1/3Nb2/3)O3–PbTiO3 laminates

Cited by 73 publications

References 14 publications

Enhanced dc magnetic field sensitivity by improved flux concentration in magnetoelectric laminates

Enhanced dc magnetic field sensitivity by improved flux concentration in magnetoelectric laminates

Giant self-biased converse magnetoelectric effect in multiferroic heterostructure with single-phase magnetostrictive materials

Magnetoelectric nonlinearity in magnetoelectric laminate sensors

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