Enhanced silicon oxide film growth on Si (100) using electron impact

Xu, Jian; Choyke, W. J.; Yates, John T.

doi:10.1063/1.366516

Cited by 42 publications

(16 citation statements)

References 28 publications

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“…4) constant voltage during the write mode does not lead to an increase in the line aspect ratio. This observation is consistent with the proposed mechanisms describing an electric field enhanced [7±11] and/or electron impact enhanced [10,23] oxidation of the wafer surface.…”

supporting

confidence: 92%

Dendrimer-Based Self-Assembled Monolayers as Resists for Scanning Probe Lithography

Tully

Wilder

Fréchet³

et al. 1999

Adv. Mater.

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The feature sizes of microelectronic circuitry components fabricated by current photolithographic processes are ultimately limited by the wavelength of the exposing radiation used for photochemical transformations. In the pursuit to develop faster and smaller semiconductor devices, both new materials and lithographic processes for nanofabrication are currently under exploration by industry and academia alike. The highest possible resolution is of the order of the size of the individual pixels that compose the image. Therefore, to obtain patterns with nanometer scale resolution, a lithographic process should manipulate materials made from molecules with dimensions no larger than the desired pixel size.We are currently exploring the use of dendrimer-based monolayers as resists for scanning probe lithography (SPL). The well-characterized globular and monodisperse properties of dendrimers make them ideally suited for selfassembly on a surface. [1±4] Due to their compact size, the ultra-thin films formed from dendrimers have a thickness much less than can be obtained by spin-coating ordinary linear polymers. In addition, we have observed that the dendritic monolayers are more stable than the analogous monolayers consisting of low molecular weight alkylsilanes. This may be due, in part, to the polymeric and dense nature of dendrimers, resulting in better protection of the anchoring group.The scanning probe microscope (SPM) has recently been shown to be a versatile tool for nanolithography. The SPM may be used for the anodization of passivated metal surfaces, [5±12] or it can act as a low energy electron source for patterning organic polymer thin films. [13±16] The scanning probe has also been used to pattern both organosilane [17] and alkanethiolate [18] monolayers on silicon and gold, respectively. We have been investigating the possibility of using ultra-thin polymeric films, such as dendrimer monolayers, as resists for SPL. Such resists might be attractive for SPL since a post-exposure wet development step would not be required prior to etching.We have investigated the properties of monolayers and ultra-thin films formed from poly(benzylether) dendrimers, [19,20] terminated with both benzyl and tert-butyldiphenylsilyl ether groups (Fig. 1), because of their relative ease of preparation and derivatization. We report here our studies on dendritic monolayer formation via covalent attachment to a silicon substrate and the lithographic patterning of these monolayers using SPL. Fig. 1. Structures of two poly(benzylether) dendrimers, terminated with both benzyl and tert-butyldiphenylsilyl ether groups.Both the benzyl ether terminated dendrons [20] (1a) and the silyl ether terminated dendrons [21] (1b) were prepared according to previously reported procedures. For the covalent attachment to the silicon wafer surface, the benzylic alcohol functionality of the dendrons was first acylated with 10-undecenoyl chloride to give esters 2a,b (Scheme 1). Platinum-catalyzed hydrosilylation of the terminal olefin with either mono-or...

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supporting

confidence: 92%

Dendrimer-Based Self-Assembled Monolayers as Resists for Scanning Probe Lithography

Tully

Wilder

Fréchet³

et al. 1999

Adv. Mater.

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“…The contact angle of water, determined by contact‐angle goniometry studies using the sessile drop method,21 increased from θ =(31±1)° on unmodified quartz to a mean contact angle of θ =(75.8±1)° upon immobilization of 1 c on quartz. A mean monolayer thickness of 17.3(1) Å was determined by ellipsometry and is in good agreement with similar overcrowded alkene systems on a variety of surfaces previously reported by our group 22.…”

Section: Methodsmentioning

confidence: 99%

In Situ Generation of Wavelength‐Shifting Donor–Acceptor Mixed‐Monolayer‐Modified Surfaces

et al. 2010

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“…Thus the basic unit of the iron sublattice shrinks when nitrogen goes out of the specimen and expands when oxygen goes into the specimen, resulting in the diffusion of iron-sublatticerelated spots in the diffraction pattern. The role of the electron beam in the decomposition of Fe 4 N is to break Fe-N chemical bonds and then stimulate the desorption of nitrogen, while in the oxidation process it acts to stimulate the adsorption and ionization of oxygen to oxidize the excessive iron with the mechanism reported on Si [11], Al [13,14], and Fe [20] surfaces. The similar process due to electron irradiation has been observed in the oxidization of InP in a UHV chamber, which includes the dissociation of In-P chemical bonds, depletion of phosphorus, and oxidization of metallic indium [17].…”

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confidence: 99%

In SituObservation of the Formation ofFe3O4inFe

et al. 2003

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gamma(')-Fe4N was subjected to electron irradiation with the dose rate of 6.8 x 10(23)e m(-2) s(-1) in a 400 kV transmission electron microscope. The first in situ observation of the formation of Fe3O4 (O) on Fe4N (gamma(')) with the orientation relationship of [100](O) parallel [100](gamma(')) and <001>(O) parallel <001>(gamma(')) has been made inside the microscope with the basic column vacuum of (5-6) x 10(-5) Pa. A mechanism is proposed involving the electron-stimulated dissociation of Fe-N chemical bonds, desorption of nitrogen from the surface, adsorption of oxygen to the surface, and the oxidization of excessive metallic iron on the surface.

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Enhanced silicon oxide film growth on Si (100) using electron impact

Cited by 42 publications

References 28 publications

Dendrimer-Based Self-Assembled Monolayers as Resists for Scanning Probe Lithography

Dendrimer-Based Self-Assembled Monolayers as Resists for Scanning Probe Lithography

In Situ Generation of Wavelength‐Shifting Donor–Acceptor Mixed‐Monolayer‐Modified Surfaces

In SituObservation of the Formation ofFe3O4inFe

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