Enhanced spin-orbit torque in Pt/Co/Pt multilayers with inserting Ru layers

Wu, Yuzhen; Meng, Kangkang; Miao, Jun; Xu, Xiaoguang; Jiang, Yong

doi:10.1016/j.jmmm.2018.10.012

Cited by 9 publications

(12 citation statements)

References 23 publications

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“…The transverse (field-like, HT) field turned out to be larger than the longitudinal (antidamping-like, HL), whereas in our work it was not detected at all, while the value of the longitudinal field in the Ru/Co/Ru structure is almost an order of magnitude larger. [35,36], so the value of is slightly less than the previously defined data for the mixed α + β crystalline phase of W:…”

Section: Table IImentioning

confidence: 65%

“…Taking into account the measured value of 𝜉 𝐿 𝑅𝑢 , the SOT efficiency of the W layer in the Ru/Co/Ru/W structure is 𝜉 𝐿 𝑊 = 0.12. The presence of an intermediate Ru/Co interface leads to additional screening due to the high spin-memory-loss parameter 𝛿 𝐶𝑜/𝑅𝑢 = 0.34 [35,36], so the value of 𝜉 𝐿 𝑊 is slightly less than the previously defined data for the mixed α + β crystalline phase of W: 𝜉 𝐿 𝑊 = 0.18 [20].…”

Section: Table IImentioning

confidence: 77%

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Advanced Method for the Reliable Estimation of Spin-Orbit-Torque Efficiency in Low-Coercivity Ferromagnetic Multilayers

et al. 2019

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An experimental study of current-induced magnetization reversal of the Ru/Co/Ru and Ru/Co/Ru/W structures was carried out. In the considered structures, due to the small value of the coercive force comparable in magnitude to the Oersted field and the SOT effect field, magnetization reversal is carried out by moving a domain wall parallel to the direction of current injection. For such a case, a new method for estimating the effective field of SOT based on the analysis of the domain wall position taking into account the distribution of the Oersted field was proposed. This method allowed determining the effective longitudinal field / = 1.6 • 10 −11 / −2 and the efficiency of SOT = 0.03 in the quasi-symmetric Ru/Co/Ru structure. It was found that adding the W capping layer enhances the SOT effect by 5 times. I.

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Section: Table IImentioning

confidence: 65%

Section: Table IImentioning

confidence: 77%

Advanced Method for the Reliable Estimation of Spin-Orbit-Torque Efficiency in Low-Coercivity Ferromagnetic Multilayers

et al. 2019

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“…In this case, it is believed that the alloyed Pt–Ru HM layer does have a positive influence on the SOT performance. According to the previous works and hypothesis proposed by Jiang, ,, Campbell and Fert, Ru impurities are believed to be a nice scatterer in Co, which strongly scattered the spins and led to a huge spin imbalance at the interface between multilayers. Similarly, in our study, it is suspected that the Ru atoms in Pt provide good scatter centers and cause more spin accumulation than pure Pt at the HM/FM interface, which causes an enhancement of the spin torque efficiency.…”

Section: Resultsmentioning

confidence: 90%

“…It is advantageous to further reduce the energy consumption and investigate the domain wall (DW) movements. On the other hand, Ru is frequently investigated as an interlayer or a cap layer. , Therefore, benefiting from these, in this work, we adjust the Ru proportion in a Pt–Ru alloyed HM layer to study its SOT performance and a significant enhancement of SOT efficiency, as well as a low critical current density of 8 × 10 5 A/cm 2 and a low required in-plane assist field of ±60 Oe are observed. Furthermore, the result of the magneto-optical Kerr effect (MOKE) microscopy reveals the presence of interfacial Dzyaloshinskii–Moriya interaction (DMI), which can be overcome by increasing the in-plane assist field.…”

Section: Introductionmentioning

confidence: 99%

Enhanced Spin–Orbit Torque and Low Critical Current Density in Pt_100–xRu_x/[CoNi]/Ru Multilayer for Spintronic Devices

Zhao

Liu

et al. 2021

ACS Appl. Mater. Interfaces

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Using a heavy-metal (HM) alloy layer in spin−orbit torque (SOT)based devices is an effective method for obtaining a high current−spin conversion efficiency θ SH . In this work, SOT-based spintronic devices with a Pt 100−x Ru x -alloyed HM layer are studied by applying harmonic Hall measurements and magneto-optical Kerr effect microscopy to detect the θ SH and to observe the process of current-induced magnetization switching. Both the highest θ SH of 0.132 and the lowest critical current density (J c ) of 8 × 10 5 A/cm 2 are realized in a device with x = 20, which satisfies the high SOT efficiency and low energy consumption simultaneously. The interfacial Dzyaloshinskii−Moriya interaction can be overcome by increasing the in-plane assist field. Meanwhile, the minimum in-plane field required for current-induced complete switching can be reduced to ±60 Oe. Our study reveals that using the Pt−Ru alloyed HM layer is an effective route for SOT application with enhanced performance.

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“…We use Pt/Co/Pt trilayer structure as the effective ferromagnetic layer in adjacent to BixTe1-x. This symmetric trilayer structure yields a magnetization easy axis perpendicular to the film plane and possesses suitable out-of-plane coercivity to carry out the subsequent electrical measurements [18][19][20] . By performing harmonic voltage measurement 21 verified.…”

Section: Introductionmentioning

confidence: 99%

Efficient Spin–Orbit Torque Switching with Nonepitaxial Chalcogenide Heterostructures

Chen

Peng

Tsai

et al. 2020

ACS Appl. Mater. Interfaces

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The spin-orbit torques (SOTs) generated from topological insulators (TIs) have gained increasing attention in recent years. These TIs, which are typically formed by epitaxially grown chalcogenides, possess extremely high SOT efficiencies and have great potential to be employed in the next-generation spintronics devices. However, epitaxy of these chalcogenides is required to ensure the existence of topologically-protected surface state (TSS), which limits the feasibility of using these materials in industry. In this work, we show that non-epitaxial BixTe1-x/ferromagnet heterostructures prepared by conventional magnetron sputtering possess giant SOT efficiencies even without TSS. Through harmonic voltage measurement and hysteresis loop shift measurement, we find that the damping-like SOT efficiencies originated from the bulk spin-orbit interactions of such non-epitaxial heterostructures can reach values greater than 100% at room temperature. We further demonstrate current-induced SOT switching in these BixTe1-x-based heterostructures with thermally stable ferromagnetic layers, which indicates that such non-epitaxial chalcogenide materials can be potential efficient SOT sources in future SOT magnetic memory devices.

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Enhanced spin-orbit torque in Pt/Co/Pt multilayers with inserting Ru layers

Cited by 9 publications

References 23 publications

Advanced Method for the Reliable Estimation of Spin-Orbit-Torque Efficiency in Low-Coercivity Ferromagnetic Multilayers

Advanced Method for the Reliable Estimation of Spin-Orbit-Torque Efficiency in Low-Coercivity Ferromagnetic Multilayers

Enhanced Spin–Orbit Torque and Low Critical Current Density in Pt_100–xRu_x/[CoNi]/Ru Multilayer for Spintronic Devices

Efficient Spin–Orbit Torque Switching with Nonepitaxial Chalcogenide Heterostructures

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Enhanced spin-orbit torque in Pt/Co/Pt multilayers with inserting Ru layers

Cited by 9 publications

References 23 publications

Advanced Method for the Reliable Estimation of Spin-Orbit-Torque Efficiency in Low-Coercivity Ferromagnetic Multilayers

Advanced Method for the Reliable Estimation of Spin-Orbit-Torque Efficiency in Low-Coercivity Ferromagnetic Multilayers

Enhanced Spin–Orbit Torque and Low Critical Current Density in Pt100–xRux/[CoNi]/Ru Multilayer for Spintronic Devices

Efficient Spin–Orbit Torque Switching with Nonepitaxial Chalcogenide Heterostructures

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Enhanced Spin–Orbit Torque and Low Critical Current Density in Pt_100–xRu_x/[CoNi]/Ru Multilayer for Spintronic Devices