Enhanced surface transfer doping of diamond by V2O5 with improved thermal stability

Crawford, Kevin G.; Cao, Liang; Qi, Dongchen; Tallaire, Alexandre; Limiti, Ernesto; Verona, C.; Wee, Andrew Thye Shen; Moran, David A. J.

doi:10.1063/1.4940749

Cited by 82 publications

(47 citation statements)

References 30 publications

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“…[32][33][34][35][36] Along with the extreme semiconducting properties such as ultrawide bandgap of 5.5 eV, high thermal conductivity, and high breakdown field, diamond electronic devices provide the attractive route to develop the next-generation electronic devices able to operate under high-power, high-frequency, and high-temperature conditions. The surface density of the 2DHG on H-terminated diamond is as high as 10 13 cm −2 and can reach 10 14 cm −2 when properly selecting the surface molecular or oxides.…”

Section: Resultsmentioning

confidence: 99%

Energy‐Efficient Metal–Insulator–Metal‐Semiconductor Field‐Effect Transistors Based on 2D Carrier Gases

Liao

Sang

Shimaoka

et al. 2019

Adv Elect Materials

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tical applications due to the high input impedance, breakdown voltage, and integration ability. Tremendous efforts have been made to achieve low subthreshold swing (SS) MOSFETs on low-dimensional materials to overcome the thermal limit of 60 mV dec −1 in conventional CMOS technology. [8][9][10] On the other hand, growing attention has also been paid to the extreme semiconductors MOSFETs based on 2DHG and 2DEG for the applications in high-power, high-frequency, and high temperature electronics. [11][12][13] However, state-of-the-art conventional MOSFETs based on low-dimensional channels such as 2DHG or 2DEG always exhibit normally on (depletion mode) behavior and show uncertainty in threshold voltage. [8][9][10][11][12][13][14][15][16] Energy-efficient normally off (enhancement mode) FETs with low SS values and tunable threshold voltage are strongly in demand from the viewpoint of energy-saving, safety aspects, gate reliability, and electronic circuit simplicity. [17] Junction FET by using p-n junction or Schottky metal gate can achieve normally off operation. [18,19] Nevertheless, many wide-bandgap semiconductors suffer from"asymmetric doping" limitation. For example, n-type dopants with shallow energy levels in diamond and stable p-type doping in ZnO are notoriously difficult. [20,21] For 2D semiconductors, p-n junctions at the MOSFET level has not been achieved yet. These bottlenecks makes inversion-type enhancement-mode MOSFETs difficult, although initial results were reported. [22] While for metal-semiconductor FETs (MES-FETs), there is an intrinsic problem of forward bias limitation. Normally off MOSFETs were reported through channel structure modification, [23] defective gate oxides, [24,25] surface treatments, [26][27][28][29] and ion implantation. [30] However, in most of the cases, the principle is based on the generation of defects, which degrade the device performance as well as the controllability. The formation of recess structure at the gate can successfully lead to normally off operation for 2DEG at the AlGaN/GaN interface, [31] but not applicable to H-terminated diamond and low-dimensional semiconductors.In this work, we propose and demonstrate the device concept of metal-insulator-metal-semiconductor FET (MIMS-FET) based on a 2DHG channel to overcome the drawbacks of MOSFET and MESFET. We show that the MIMS-FET exhibits normally off operation, low subthreshold swing ≈76 mV dec −1 , high drain current, high on/off current ratio over 10 9 , and low gate leakage. These electrical properties are thermally stable up 2D electron and hole gases (2DEG or 2DHG) based on semiconductor surface/interface or 2D materials are promising for next-generation integrated circuits and high-frequency and -power electronics. To reduce power consumption, normally off operation and low-switching-loss metal-oxide fieldeffect transistors (MOSFETs) based on 2DEG or 2DHG are highly in demand. The present methods to achieve normally off MOSFETs have various shortcomings such as reduction in carrier mobility, sacrifice of dra...

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Section: Resultsmentioning

confidence: 99%

Energy‐Efficient Metal–Insulator–Metal‐Semiconductor Field‐Effect Transistors Based on 2D Carrier Gases

Liao

Sang

Shimaoka

et al. 2019

Adv Elect Materials

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“…Kasu et al found that the NO 2 (≈5 ppb) in air could induce a p‐type conductivity on H‐terminated diamond, and the NO 2 , NO, O 3 , and SO 2 gases form the surface holes. In addition, some solid‐state oxides with high positive affinity can be surface electron acceptor material, such as MoO 3 , V 2 O 5 , Nb 2 O 5 , and WO 3 . However, assuming that the surface negative charge is responsible for the formation of hole accumulation would be sufficient for our calculation.…”

Section: Parameters Used In the Calculationmentioning

confidence: 99%

Mobility of Two‐Dimensional Hole Gas in H‐Terminated Diamond

Zhang

Liu

et al. 2018

Physica Rapid Research Ltrs

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The two-dimensional hole gas (2DHG) induced at H-terminated diamond surface provides the most widely used room-temperature surface electrical conductance of diamond semiconductors. Temperature and hole sheet density dependences of the mobility of 2DHG in H-terminated diamond are investigated for the first time considering four scattering mechanisms: surface impurity (SI) scattering, acoustic deformation potential (AC) scattering, nonpolar optical phonon (NOP) scattering, and surface/interface roughness (SFR/IFR) scattering. The calculation results are then compared with the experimental data, where the best agreement is obtained with the effective coupling constant of the non-polar optical phonon D nop and the correlation length L with values of of 1.2 Â 10 10 eV cm À1 and 2 nm, respectively. The theoretical data show that the SI scattering dominates the 2DHG mobility at a relatively large range of the temperature and the hole density due to the proximity of the surface impurities to the 2DHG, while the NOP scattering becomes important as the temperature increases further.

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“…[36]. It may be worth while to note here that the Fermi-level position for airborne SC H-terminated diamond was initially reported to be 0.7 eV below E V [39,40] and that this appeared to be contradictory to the later reports [29,37,38].…”

Section: Discussionmentioning

confidence: 75%

“…Another concern in Ref [36] is that C 1s peak binding energy appeared at 283.74 eV for H-terminated diamond (100). This should be about 284.0 eV for airborne surface-conductive H-terminated diamond as found in this study and in other recent studies [37,38]. The binding-energy calibration might be in error in…”

Section: Discussionmentioning

confidence: 78%

Direct determination of the barrier height of Au ohmic-contact on a hydrogen-terminated diamond (001) surface

Kono

Teraji

Takeuchi

et al. 2017

Diamond and Related Materials

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Enhanced surface transfer doping of diamond by V2O5 with improved thermal stability

Cited by 82 publications

References 30 publications

Energy‐Efficient Metal–Insulator–Metal‐Semiconductor Field‐Effect Transistors Based on 2D Carrier Gases

Energy‐Efficient Metal–Insulator–Metal‐Semiconductor Field‐Effect Transistors Based on 2D Carrier Gases

Mobility of Two‐Dimensional Hole Gas in H‐Terminated Diamond

Direct determination of the barrier height of Au ohmic-contact on a hydrogen-terminated diamond (001) surface

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