Enhanced switching uniformity in AZO/ZnO1−x/ITO transparent resistive memory devices by bipolar double forming

Abstract

The influence of single and double forming on the switching stability of AZO/ZnO1−x/ITO transparent resistive memory devices was investigated. Devices that underwent single forming exhibited severe switching instability, where as those that underwent double forming exhibited excellent switching uniformity. The quantity of conducting filaments can be limited by applying the two-step forming process. Consequently, the set/reset process can be controlled, enhancing switching stability. Satisfactory endurance with an acceptable ON/OFF ratio of 102 and satisfactory retention behavior of 104 s at room temperature confirmed the reliability of optimized devices. Furthermore, highly transparent devices (transparency of approximately 85% in visible range) have been fabricated.

Resistive switching and charge transport mechanisms in ITO/ZnO/p-Si devices

“…At larger voltages (above 0.7 V), injected carriers from the ITO contact present enough energy to overcome the ITO-ZnO potential barrier, exhibiting a FN behavior. 19 The correlation between the charge transport mechanisms through ZnO and its structural modification under external electrical stress helps anticipating the optimum operation conditions of ZnO-based memristors. In addition, subsequent cycles between positive and negative voltages can promote stable switching between the two states (HRS and LRS), maintaining the previously observed mechanisms.…”

“…Finally, the obtained results are explained according to the charge transport mechanisms underlying the three different conduction states (pristine, LRS, and HRS), which sheds light on the CNF formation and destruction processes within ZnO. Whilst other publications only perform a fitting of the experimental data using different conduction models but without discussing the extracted physical parameters, [19][20][21] the hereby presented extended analysis of the I(V) curves of our devices allowed for the determination of structural parameters related to RS, such as the effective conductive area in LRS and the filament gap in HRS. The determination of these parameters has previously been carried out directly by transmission electron microscopy (TEM) techniques.…”

Narrowing the band gap to enhance the resistive switching properties of Pr3+-doped ZnO thin films by Cd-ion doping

“…9 To solve the above problems and improve the performance of devices, various approaches have been explored including impurity doping, nanoparticle incorporation, and interface engineering. [10][11][12] Binary oxides as most promising resistive memory material candidates have been widely investigated to understand the switching mechanisms. [13][14][15][16][17] ZnO, a well-known oxide semiconductor, has also been studied with regard to its RS behavior and several excellent features, including large memory window, low processing temperature, and the possibility of fabricating transparent/exible electronic devices.…”

“…[13][14][15][16][17] ZnO, a well-known oxide semiconductor, has also been studied with regard to its RS behavior and several excellent features, including large memory window, low processing temperature, and the possibility of fabricating transparent/exible electronic devices. [8][9][10][11][12][13][14][15][16][17][18][19][20][21][22] Compared with pure ZnO thin lms, [23][24][25][26] doped ZnO has been investigated to achieve improved device performance. 27 Simanjuntak, et al doped cobalt into ZnO resistive memory devices, compensating for the native defects, thus improving the RS performance.…”

Temperature induced complementary switching in titanium oxide resistive random access memory

“…Among the several emerging memory, resistive random access memory (RRAM) based on the resistive switching (RS) effect taking place in metal-insulator-metal (MIM) cells, has attracted renowned interests as a promising next generation nonvolatile memory owing to its simple constituents, high speed operation, nondestructive readout, low operation voltage, long retention time, and high scalability. [1][2][3][4][5][6][7] Binary transition metal oxides, such as SiO 2 , HfO 2 , TiO 2 , NiO, ZnO, Ta 2 O 5 , etc., [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18] has been intensively investigated as an active layers in RRAM application, for their big advantage, like crystal structure and stoichiometry are more easily controlled than perovskite oxides that consist of more than three components. Two-terminal RRAM structure allow its integration in crossbar arrays, by accessing each memory cell through the selection of a word-line and a bit-line.…”