Enhanced thermal stability of TA-based thin diffusion barriers by ion implantation

Atom beam sputtered Mo2C films as a diffusion barrier for copper metallization

“…Molybdenum carbides due to its higher melting point and immiscibility with copper, if grown in amorphous phase may lead to higher thermal stability temperature. In the past number of techniques like ion implantation/ bombardment [15,20], plasma ion immersion [21] has been used to produce amorphous conducting films with higher thermal stability. Because of low bulk resistivity of Mo (5.7 mV cm), the growth of low resistive, amorphous molybdenum carbide and limited solubility in copper may prohibit the diffusion of copper and carbide layers or vice versa.…”