IEEE MTT-S International Microwave Symposium Digest, 2003
DOI: 10.1109/mwsym.2003.1212469
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Enhancement-mode power heterojunction FET utilizing re-grown p/sup +/-GaAs gate with negligible off-state leakage current

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Cited by 3 publications
(1 citation statement)
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“…2) There have been many studies on the fabrication of high-current-density E-pHEMT using a high gate turn-on voltage (V G,ON ). [2][3][4] However, E-pHEMT with a high V G,ON normally exhibits problems of current saturation and transconductance (g m ) reduction at a high V GS . A parasitic metal semiconductor field effect transistor (MESFET) phenomenon and quasi-Fermi-level bending were reported to be the causes of g m reduction at a high V GS for HEMT.…”
Section: Introductionmentioning
confidence: 99%
“…2) There have been many studies on the fabrication of high-current-density E-pHEMT using a high gate turn-on voltage (V G,ON ). [2][3][4] However, E-pHEMT with a high V G,ON normally exhibits problems of current saturation and transconductance (g m ) reduction at a high V GS . A parasitic metal semiconductor field effect transistor (MESFET) phenomenon and quasi-Fermi-level bending were reported to be the causes of g m reduction at a high V GS for HEMT.…”
Section: Introductionmentioning
confidence: 99%