Enhancement of efficiency of InGaN-based light emitting diodes through strain and piezoelectric field management

Pal, Joydeep; Migliorato, M. A.; Li, C.-K.; Wu, Yuh‐Renn; Crutchley, B. G.; Marko, I. P.; Sweeney, S. J.

doi:10.1063/1.4818794

Cited by 19 publications

(12 citation statements)

References 39 publications

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“…8) also confirmed the expectations of higher efficiency for tensile strained devices. This was also experimentally observed by Zhang and Tansu, 37 further confirming that the non-linear model of piezoelectricity appears to be not just qualitatively but also quantitatively correct.…”

Section: Iii-n Light Emitting Diodessupporting

confidence: 82%

“…Reproduced with permission from Ref [37]. Proposed c-plane InGaN LED device structure using a metamorphic layer before the MQW region which is grown on the top of n-type GaN layer.…”

Section: Figurementioning

confidence: 99%

“…The InGaN quantum well has either 14% or 26% for the blue or green emission respectively. [37]. Spontaneous emission spectra at injection carrier density equal to 2.5 x 10 12 cm −2 for both the blue (x=14%) and green (x=26%) LED structures having In x Ga 1-x N/GaN quantum wells.…”

Section: Figurementioning

confidence: 99%

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A review of non linear piezoelectricity in semiconductors

Migliorato

Pal

Garg

et al. 2014

AIP Conference Proceedings

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The piezoelectric effect in polar semiconductor has seen increased interest in recent years because of the prospect of exploiting semiconducting behavior and piezoelectric response, i.e. generating electric fields in response to pressure, in novel optoelectronic devices with applications as pressure sensors and energy harvesting. In this paper we review the basic concepts and recent findings related to the novel concept of non-linear piezoelectricity, which can be exploited in composite nanostructured materials to increase the piezoelectric response compared to bulk materials. Applications to light emitting diodes and nanowires will also be discussed. We will show how the non-linear theory of piezoelectricity can in some cases lead to opposite predictions compared to the classic linear theory.

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Section: Iii-n Light Emitting Diodessupporting

confidence: 82%

“…Reproduced with permission from Ref [37]. Proposed c-plane InGaN LED device structure using a metamorphic layer before the MQW region which is grown on the top of n-type GaN layer.…”

Section: Figurementioning

confidence: 99%

See 1 more Smart Citation

A review of non linear piezoelectricity in semiconductors

Migliorato

Pal

Garg

et al. 2014

AIP Conference Proceedings

Self Cite

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“…P total is inserted into the Poisson equation to solve for the potential distribution, where ᭞ÁP ¼ q. Note that the second-order piezoelectricity 35,36 was not considered here since for a blue LED this effect will only lead to changes in polarization on the order of 3%-7%, which is in the acceptable range.…”

Section: Methodsmentioning

confidence: 99%

The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior

Yang

Shivaraman

Speck

et al. 2014

Journal of Applied Physics

134

105

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Articles you may be interested inInGaN/GaN multiple-quantum-well light-emitting diodes with a grading InN composition suppressing the Auger recombination Appl. Phys. Lett. 105, 033506 (2014); 10.1063/1.4891334 High efficiency InGaN/GaN light emitting diodes with asymmetric triangular multiple quantum wells Appl. Phys. Lett. 104, 091111 (2014); 10.1063/1.4867023Effect of V-defects on the performance deterioration of InGaN/GaN multiple-quantum-well light-emitting diodes with varying barrier layer thicknessIn this paper, we describe the influence of the intrinsic indium fluctuation in the InGaN quantum wells on the carrier transport, efficiency droop, and emission spectrum in GaN-based light emitting diodes (LEDs). Both real and randomly generated indium fluctuations were used in 3D simulations and compared to quantum wells with a uniform indium distribution. We found that without further hypothesis the simulations of electrical and optical properties in LEDs such as carrier transport, radiative and Auger recombination, and efficiency droop are greatly improved by considering natural nanoscale indium fluctuations. V C 2014 AIP Publishing LLC.

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“…112,120,121 The prime requisite for a better understanding of experimental information is probably an improved description of carrier transport across the active region. Promising efforts are represented by momentum-resolved models 23,122 and analytic-band Monte Carlo (MC) transport simulations, 123 but the need for a full-band MC approach (FBMC, possibly integrated with microscopic models of radiative and nonradiative recombination processes) is apparent, especially after the recent debate following the proposed identification of Auger recombination as the dominant mechanism in droop from electron emission spectroscopy experiments, 124 where FBMC analysis has suggested that the LED structure under investigation was probably unsuitable to recover an Auger signature.…”

Section: Discussionmentioning

confidence: 99%

Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues

et al. 2014

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Electroluminescence (EL) characterization of InGaN/GaN light-emitting diodes (LEDs), coupled with numerical device models of different sophistication, is routinely adopted not only to establish correlations between device efficiency and structural features, but also to make inferences about the loss mechanisms responsible for LED efficiency droop at high driving currents. The limits of this investigative approach are discussed here in a case study based on a comprehensive set of currentand temperature-dependent EL data from blue LEDs with low and high densities of threading dislocations (TDs). First, the effects limiting the applicability of simpler (closed-form and/or one-dimensional) classes of models are addressed, like lateral current crowding, vertical carrier distribution nonuniformity, and interband transition broadening. Then, the major sources of uncertainty affecting state-of-the-art numerical device simulation are reviewed and discussed, including (i) the approximations in the transport description through the multi-quantum-well active region, (ii) the alternative valence band parametrizations proposed to calculate the spontaneous emission rate, (iii) the difficulties in defining the Auger coefficients due to inadequacies in the microscopic quantum well description and the possible presence of extra, non-Auger high-current-density recombination mechanisms and/or Auger-induced leakage. In the case of the present LED structures, the application of three-dimensional numerical-simulation-based analysis to the EL data leads to an explanation of efficiency droop in terms of TD-related and Auger-like nonradiative losses, with a C coefficient in the 10−30 cm6/s range at room temperature, close to the larger theoretical calculations reported so far. However, a study of the combined effects of structural and model uncertainties suggests that the C values thus determined could be overestimated by about an order of magnitude. This preliminary attempt at uncertainty quantification confirms, beyond the present case, the need for an improved description of carrier transport and microscopic radiative and nonradiative recombination mechanisms in device-level LED numerical models

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Enhancement of efficiency of InGaN-based light emitting diodes through strain and piezoelectric field management

Cited by 19 publications

References 39 publications

A review of non linear piezoelectricity in semiconductors

A review of non linear piezoelectricity in semiconductors

The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior

Correlating electroluminescence characterization and physics-based models of InGaN/GaN LEDs: Pitfalls and open issues

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