No abstract

FinTech is the term used to refer to financial and technology convergence space solutions. It usually refers to new innovations that conduct or connect with financial services via the internet, smart devices, software applications, or cloud services and encompasses anything from mobile banking to cryptocurrency applications. Despite the advantages of FinTech, cybercriminals seized the opportunity to exploit vulnerabilities in FinTech systems. Phishing attacks, ransomware, and data breaches have become more prevalent, targeting individuals and FinTech institutions. Bahrain, which is not different from the rest of the world, was impacted by such cyber threats. Thus, FinTech companies have had to strengthen their cybersecurity countermeasures and protocols to combat these threats.Existing countermeasures in the literature primarily focus on general cybersecurity practices and frameworks, with limited attention given to the specific needs of the FinTech industry. Hence, there is a notable gap in the literature regarding a focused cybersecurity framework that caters to the unique requirements of Fin-Tech innovations, especially in Bahrain. To bridge this gap, this research addresses the problem by conducting an extensive review of existing cybersecurity challenges, common practices, and cybersecurity standards and through in-depth research interviews with executives, experts, and other FinTech business stakeholders. Leveraging this knowledge, this research proposed an adaptable framework that addresses the risks and vulnerabilities faced by FinTech innovations in Bahrain.Through panel discussions and Delphi sessions, industry experts evaluated the framework's practical feasibility, ability to address specific risks, and compatibility with the existing FinTech regulatory landscape. The results demonstrate a high

No abstract

Linear and quadratic piezoelectric coefficients of wurtzite III-V (GaP, InP, GaAs and InAs) semiconductors are calculated using ab-initio density functional theory. We show that the predicted magnitude of such coefficients is much larger than previously reported and of the same order of magnitude as those of III-N semiconductors. In order to show the applicability of wurtzite III-V semiconductors as piezoelectric materials, we model the bending distortion created on a nanowire by an atomic force microscope tip. We calculate the dependence of the piezoelectric properties of both homogeneous and core shell wurtzite III-V semiconductor structures on the induced deflection. We show that a number of combinations of III-V materials for the core and the shell of the nanowires can favor much increased voltage generation. We observe the largest core voltages in core/shell combinations of InAs/GaP, InP/GaP, GaP/InAs and GaP/InP which are predicted to be 3 orders of magnitude larger than the typical values of 73 V in homogeneous nanowires. Also considering properties such as voltage generation, bandgap discontinuity and mobility, III-V wurtzite core-shell nanowires are candidates for high performance components in piezotronics and nanogeneration.

No abstract