Erratum: Second-order piezoelectricity in wurtzite III-N semiconductors [Phys. Rev. B<b>84</b>, 085211 (2011)]

Pal, Joydeep; Tse, Geoffrey; Haxha, V.; Migliorato, M. A.; Tomić, Stanko

doi:10.1103/physrevb.84.159902

Cited by 28 publications

(41 citation statements)

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“…(5)] is by far the most important contribution to the total average polarization. An alternative approach to calculate polarization-related quantities in group-III nitrides has been recently presented by Pal et al [10]. While Pal's approach is in good agreement with other literature values, significantly lower spontaneous polarization values are found.…”

Section: Local Polarization In Ingan Alloyssupporting

confidence: 57%

Effect of alloy fluctuations on the local polarization in nitride nanostructures

Miguel

Schulz²,

O’Reilly

2012

Physica Status Solidi (b)

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We present a classical dipole model, in combination with firstprinciples calculations, to study the local polarization, as well as the polarization potential, in InGaN alloys. Our results are in excellent agreement with previous ab initio calculations in the macroscopic limit and, in addition, offer an insight into the microscopic origin of the previous results, in particular the strong relation between internal strain and the upward bowing in the spontaneous polarization of InGaN. This model can be generalized to any piezoelectric material, and in particular to AlInN and AlGaN alloys.

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Section: Local Polarization In Ingan Alloyssupporting

confidence: 57%

Effect of alloy fluctuations on the local polarization in nitride nanostructures

Miguel

Schulz²,

O’Reilly

2012

Physica Status Solidi (b)

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“…Non-linearity has instead been recognized to have a significant magnitude in ZB III-V [65][66][67] WZ III-N [68,69] and ZnO [70] semiconductors. However, in the WZ crystal phase, for some III-V semiconductors, second-order PZCs have not yet been reported, making it difficult to assess the influence of non-linear piezoelectricity in NWs and CSNWs.…”

Section: Piezoelectricity In Iii-vsmentioning

confidence: 97%

Piezoelectric field enhancement in III–V core–shell nanowires

et al. 2015

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Linear and quadratic piezoelectric coefficients of wurtzite III-V (GaP, InP, GaAs and InAs) semiconductors are calculated using ab-initio density functional theory. We show that the predicted magnitude of such coefficients is much larger than previously reported and of the same order of magnitude as those of III-N semiconductors. In order to show the applicability of wurtzite III-V semiconductors as piezoelectric materials, we model the bending distortion created on a nanowire by an atomic force microscope tip. We calculate the dependence of the piezoelectric properties of both homogeneous and core shell wurtzite III-V semiconductor structures on the induced deflection. We show that a number of combinations of III-V materials for the core and the shell of the nanowires can favor much increased voltage generation. We observe the largest core voltages in core/shell combinations of InAs/GaP, InP/GaP, GaP/InAs and GaP/InP which are predicted to be 3 orders of magnitude larger than the typical values of 73 V in homogeneous nanowires. Also considering properties such as voltage generation, bandgap discontinuity and mobility, III-V wurtzite core-shell nanowires are candidates for high performance components in piezotronics and nanogeneration.

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“…Figure 7 shows that the internal field strength is expected to increase from 2.47 to 2.56 MV cm À1 ($4% increase) and from 4.54 to 4.70 MV cm À1 ($4% increase) for the blue and green LED, respectively, as pressure is increased from ambient conditions to 10 kbar where we have used e b ¼ 10 and obtain e w(blue) ¼ 10.7 and e w(green) ¼ 11.4 using Vegard's law with e InN ¼ 15.3 [22]. It also worth noting that if one used the linear model of piezoelectricity of Bernardini and Fiorentini [23] then the internal field strength would instead present a decrease from 1.53 to 1.51 MV cm À1 ($2% decrease) and from 2.76 to 2.72 MV cm À1 ($2% decrease) for the blue and green LED, respectively.…”

Section: Originalmentioning

confidence: 99%

“…Figure 6 shows the calculated change in polarization in the wells and barriers for the blue and green LEDs as hydrostatic pressure is applied. Non-linear piezoelectric coefficients from Pal et al [22] are used in this calculation, as opposed to the linear theory of Bernardini and Fiorentini [23] as the second-order piezoelectricity plays a significant role and will therefore lead to a more accurate determination of the polarization strength.…”

Section: Originalmentioning

confidence: 99%

Optical properties of InGaN‐based LEDs investigated using high hydrostatic pressure dependent techniques

Crutchley

Marko

Pal

et al. 2013

Physica Status Solidi (b)

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High pressure electroluminescence (EL) measurements were carried out on blue and green emitting InGaN-based light emitting diodes (LEDs). The weak pressure coefficient of the peak emission energy of the LEDs is found to increase with increasing injection current. Such behaviour is consistent with an enhancement of the piezoelectric fields under high pressure which become increasingly screened at high currents. A subsequent increase in the quantum confined Stark effect (QCSE) is expected to cause a reduction of the light output power as pressure is applied at a fixed low current density (∼10Acm). A similar proportional reduction of light output power as pressure is applied at a fixed high current density (260Acm) suggests that there is a non-radiative loss process in these devices which is relatively insensitive to pressure. Such behaviour is shown to be consistent with a defect-related recombination process which increases with increasing injection. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

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Erratum: Second-order piezoelectricity in wurtzite III-N semiconductors [Phys. Rev. B84, 085211 (2011)]

Cited by 28 publications

References 0 publications

Effect of alloy fluctuations on the local polarization in nitride nanostructures

Effect of alloy fluctuations on the local polarization in nitride nanostructures

Piezoelectric field enhancement in III–V core–shell nanowires

Optical properties of InGaN‐based LEDs investigated using high hydrostatic pressure dependent techniques

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