Piezoelectric field enhancement in III–V core–shell nanowires

Al-Zahrani, H. Y. S.; Pal, Joydeep; Migliorato, M. A.; Tse, Geoffrey; Yu, Dapeng

doi:10.1016/j.nanoen.2014.11.046

Cited by 47 publications

(40 citation statements)

References 80 publications

(93 reference statements)

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“…Piezoelectric constants were calculated using approach presented by Hubner [19] and their values were (C m À2 ): e 33 ¼ À0.295, e 31 ¼ 0.15. Here we should note that value of the piezo coefficient e 33 lies within the range of values previously reported by few theoretical groups: À0.32 C m À2 [12] and À0.26 C m À2 . [20] Thus, we consider the value of e 33 ¼ À0.295 C m À2 as justified in the frames of the recent phenomenological work.…”

supporting

confidence: 89%

“…Another approach of the increasing of the piezo-potential is creating of the core-shell structures, for example with InP or GaP layers, which was analysed by Al-Zahrani. [12] In conclusion, significant intensification of the electric current was observed in a probe-nanowire circuit when an AFM tip touched the compressed part of a GaAs NW with a wurtzite crystal lattice. The polarity of the generated current corresponded to tunneling of holes from the probe to the NW resulting from a decrease in the Schottky barrier width due to the piezoelectric potential.…”

mentioning

confidence: 81%

“…Al‐Zahrani et al recently demonstrated piezoelectric field enhancement in III–V core–shell NWs with a WZ structure . Pan et al reported that piezo‐potential in NWs increases separation of the light‐induced charge carriers due to the piezo‐phototronic effect .…”

mentioning

confidence: 99%

“…As an outlook, the piezo‐potential could be further increased by the deformation of the NWs along the vertical c ‐axis. Another approach of the increasing of the piezo‐potential is creating of the core‐shell structures, for example with InP or GaP layers, which was analysed by Al‐Zahrani …”

mentioning

confidence: 99%

“…Al-Zahrani et al recently demonstrated piezoelectric field enhancement in III-V core-shell NWs with a WZ structure. [12] Pan et al reported that piezo-potential in NWs increases separation of the light-induced charge carriers due to the piezophototronic effect. [8] Furthermore, it has been proven that the piezo-potential along the growth axis of a III-V NW is able to enhance solar cell efficiency.…”

mentioning

confidence: 99%

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Piezoelectric Current Generation in Wurtzite GaAs Nanowires

Alekseev

Sharov

Geydt

et al. 2017

Physica Rapid Research Ltrs

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Generation of electric current is observed when GaAs nanowires with wurtzite crystal structure are bent by the probe of an atomic force microscope. The current originates from a piezo active phase in the nanowires due to the piezoelectric effect. Increasing of the piezo-potential in bent nanowires enhances tunneling through the probe-nanowire Schottky barrier due to the thermionic field emission. Laser illumination amplifies short-circuit current pulses by two orders of magnitude from 9 pA to 1 nA due to the piezo-phototronic effect. Utilization of such piezo-phototronic effect in GaAs nanowires is a solution to accelerate the efficiency of hybrid energy sources "piezoelectric nanogenerator À solar cell" comprised of III-V nanowires.

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confidence: 89%

mentioning

confidence: 81%

mentioning

confidence: 99%

mentioning

confidence: 99%

mentioning

confidence: 99%

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Piezoelectric Current Generation in Wurtzite GaAs Nanowires

Alekseev

Sharov

Geydt

et al. 2017

Physica Rapid Research Ltrs

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Substrate‐Free Chemical Vapor Deposition of Large‐Scale III–V Nanowires for High‐Performance Transistors and Broad‐Spectrum Photodetectors

Yin

Guo

Liu

et al. 2022

Advanced Optical Materials

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the near future by constructing all-around NWs field-effect-transistors (NWFETs), complementary metal-oxide-semiconductor (CMOS) inverts, etc. [6,7] On the other hand, with narrow bandgaps of 0.35 and 0.77 eV, InAs and GaSb NWs are also considered as the ideal channel semiconductors for next-generation high-performance infrared photodetectors, demonstrating high responsivity of ≈10 4 AW -1 and detectivity of ≈10 12 Jones for near-infrared to middleinfrared at room temperature. [8][9][10] Especially, with a closing bandgap (1.42 eV) of Shockley-Queisser limit, typical III-V semiconductor of GaAs NW has been studied in the fields of not only infrared photodetectors but also high-efficiency solar cells. [11][12][13][14] Owing to the extreme photon collection boost in free-standing NWs, the efficiency of single GaAs NW can be as high as 40%. [14] Recently, for achieving high-performance broad-spectrum photodetectors, ternary alloy III-V semiconductors of InGaAs NWs and GaAsSb NWs with full composition range have become the research stars. [15][16][17][18][19] The hot development of wearable or flexible optoelectronic devices is challenging the research of III-V NWs. [20][21][22][23] Recently, lightweight structured fabrics with tunable mechanical properties enabled by non-convex interlocked particles have been realized by Wang et al. [20] Obviously, the successful growth of largescale high-quality III-V NWs on the expected novelty functional fabrics directly will promote the next-generation wearable or flexible electronics and photoelectronics. In the past decades, metal-organic chemical vapor deposition, molecular beam epitaxy, metal-organic vapor phase epitaxy, and chemical vapor deposition (CVD) methods are the commonly adopted technologies for the growth of high-quality III-V NWs. [24][25][26][27][28][29][30][31][32][33] Generally speaking, expensive wafers of GaSb, InAs, GaAs, InP, etc. are used as the growth substrates for overcoming the lattice mismatch during NWs growth process. [34,35] Fortunately, metals of Au, Sn, Pd, etc. can be deposited on the selected substrates as growth catalysts for III-V NWs, followed by vapor-liquidsolid (VLS) or vapor-solid-solid (VSS) growth mechanism. [36,37] Generally speaking, during the VLS growth process, the adopted metals catalysts are liquid, which requires the eutectic Large-scale growth of high-quality III-V nanowires (NWs) on an expected substrate is challenging the next-generation optoelectronic devices. In this work, high-quality III-V NWs of binary GaSb, GaAs and ternary GaAs x Sb 1−x , In x Ga 1−x As are successfully prepared on the hard substrates of SiO 2 /Si, amorphous glass and flexible substrates of mica, glass fiber, and carbon cloth by adopting the simple and low-cost metal-catalyzed chemical vapor deposition (CVD) method. The homogeneity of morphology, crystallinity, and stoichiometry is checked by scanning electron microscopy, X-ray diffraction, high-resolution transmission electron microscopy, and energy dispersive X-ray spectroscopy, implying the high-q...

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Acoustic properties of piezoelectric cubic crystals

Ballato

2023

Int J Ceramic Engine & Sci

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This paper is offered as a complementary adjunct to the many treatments of the electronic and photonic properties of cubic III–V and II–VI compounds appearing in the literature. These crystals typically exhibit piezoelectricity, due to the molecular dissymmetry, thereby allowing the inclusion of classical mechanical/acoustic features along with the quantum. We discuss the history of this modality and then illustrate its use by applying it to an electro‐elastic problem that has the estimable virtues of having an exact solution, along with wide practical applicability: determination of the piezocoupling values governing the excitation of thickness vibrations in thin cubic films or plates of arbitrary crystallographic orientation by electric fields directed either along, or lateral to, the thickness. Explicit results are given for orientations along the great‐circle paths connecting the principal directions [100], [110], and [111]. The formalism is then applied to GaAs as an example; it is further demonstrated that various results, such as the orientational variations of piezocoupling factors, are generally applicable to other members of the III–V and II–VI families by scaling. Ancillary aspects, such as errors due to misorientations, nonlinearities, and equivalent circuit representations, are described and discussed. This work is dedicated to Gerald W. Farnell (1925–2015), Prof. Emeritus, McGill University, Montréal, Canada.

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Piezoelectric field enhancement in III–V core–shell nanowires

Cited by 47 publications

References 80 publications

Piezoelectric Current Generation in Wurtzite GaAs Nanowires

Piezoelectric Current Generation in Wurtzite GaAs Nanowires

Substrate‐Free Chemical Vapor Deposition of Large‐Scale III–V Nanowires for High‐Performance Transistors and Broad‐Spectrum Photodetectors

Acoustic properties of piezoelectric cubic crystals

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