Enhancement of InN Luminescence by Introduction of Graphene Interlayer

Dobrovolskas, D.; Arakawa, Shingo; Mouri, Shinichiro; Araki, Tsutomu; Nanishi, Yasushi; Mickevičius, J.; Тамулайтис, Г.

doi:10.3390/nano9030417

Cited by 7 publications

(4 citation statements)

References 22 publications

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“…The observed tetrahedral-and hexagonalpyramid-shaped seeds are aligned in-plane, proving that azimuthal orientation is preserved during growth via graphene on GaN. This shows that atoms of the epilayer interacted with the substrate field via graphene, demonstrating the remote epitaxy principle in contrast to other attempts where polycrystalline film was obtained [43].…”

Section: Multi-step Growth Of Gan Layersmentioning

confidence: 74%

Remote epitaxy of GaN via graphene on GaN/sapphire templates

Badokas¹,

Kadys²,

Mickevičius³

et al. 2021

J. Phys. D: Appl. Phys.

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Remote epitaxy via graphene has recently attracted significant attention, since it provides the possibility to lift-off the grown epitaxial layer, reuse the substrate, and produce flexible devices. However, extensive research is still necessary to fully understand the III-nitride formation on the van der Waals surface of a two-dimensional material and utilize remote epitaxy to its full potential. In this work, the growth of a GaN epilayer using a GaN/sapphire template covered with monolayer graphene is presented. Metalorganic vapor phase epitaxy is chosen to fabricate both the template and the nitride epilayer on top as a cost-effective approach toward GaN homoepitaxy. One-step and multi-step growth temperature protocols are demonstrated while paying particular attention to the graphene interface. GaN seed formation on graphene is analyzed to identify remote epitaxy. Crystalline quality improvement of the epilayer by adjusting the growth parameters is further discussed to provide useful insights into GaN growth on a GaN/sapphire template via monolayer graphene.

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Section: Multi-step Growth Of Gan Layersmentioning

confidence: 74%

Remote epitaxy of GaN via graphene on GaN/sapphire templates

Badokas¹,

Kadys²,

Mickevičius³

et al. 2021

J. Phys. D: Appl. Phys.

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“…Actually, quantum efficiency inside a GaN/InGaN solar cell prepared on a sapphire substrate is as high as 60% [12]. Therefore, various methods have been used to prepare InN thin films with high quality to achieve wide practical applications [15][16][17][18][19][20][21][22][23]. Moreover, the wavelength emitted by InN-based materials can reach 1.55 µm, which belongs to a communication band with a long wavelength.…”

Section: Introductionmentioning

confidence: 99%

Impact of the Deposition Temperature on the Structural and Electrical Properties of InN Films Grown on Self-Standing Diamond Substrates by Low-Temperature ECR-MOCVD

et al. 2020

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The progress of InN semiconductors is still in its infancy compared to GaN-based devices and materials. Herein, InN thin films were grown on self-standing diamond substrates using low-temperature electron cyclotron resonance plasma-enhanced metal organic chemical vapor deposition (ECR-PEMOCVD) with inert N2 used as a nitrogen source. The thermal conductivity of diamond substrates makes the as-grown InN films especially attractive for various optoelectronic applications. Structural and electrical properties which depend on deposition temperature were systematically investigated by reflection high-energy electron diffraction (RHEED), X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and Hall effect measurement. The results indicated that the quality and properties of InN films were significantly influenced by the deposition temperature, and InN films with highly c-axis preferential orientation and surface morphology were obtained at optimized temperatures of 400 °C. Moreover, their electrical properties with deposition temperature were studied, and their tendency was correlated with the dependence on micro- structure and morphology.

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“…26 Dobrovolskas et al have reported that luminescence of InN is significantly improved by adding a multilayer graphene as an interlayer, which mitigates the lattice difference between the InN layer and substrate through weak van der Waals interaction between nitride and graphene layers. 27 Growth of sp 3 -bonded three-dimensional (3D) III-nitride layers directly on the sp 2 -bonded 2D graphene is challenging. Because the graphene sheet is inert due to the lack of dangling bonds and van der Waals interactions are typically weak, there is poor adhesion.…”

Section: ■ Introductionmentioning

confidence: 99%

“…We have recently reported the growth of InN on epitaxial graphene using radio-frequency molecular beam epitaxy (RF-MBE) . Dobrovolskas et al have reported that luminescence of InN is significantly improved by adding a multilayer graphene as an interlayer, which mitigates the lattice difference between the InN layer and substrate through weak van der Waals interaction between nitride and graphene layers …”

Section: Introductionmentioning

confidence: 99%

Growth Mechanism of InN Nucleation Layers on Epitaxial Graphene Using Metal Organic Vapor Phase Epitaxy and Radio-Frequency Molecular Beam Epitaxy

Bhuiyan

Ishimaru

Hashimoto

2020

Crystal Growth & Design

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This paper presents a growth mechanism and a comparative study of the InN nucleation layers grown on epitaxial graphene (EG) by metal organic vapor phase epitaxy (MOVPE) and radio-frequency molecular beam epitaxy (RF-MBE). Before growing InN nucleation layers, the EG surface was formed on 4° off 6H-SiC substrates (both Si- and C-faces) by thermal annealing in Ar ambient. The MOVPE grown InN nucleation layers show three-dimensional (3D) growth from the very beginning due to lack of nucleation centers and for the long migration length on the EG surface. The MOVPE InN on the EG formed on Si-face SiC is nucleated with the step edge, while it is nucleated randomly over the entire EG surface on C-face SiC. In contrast, the RF-MBE InN nucleation layers grown on EG formed on Si-face SiC show a two-dimensional growth mode up to 3 ML, and then a further increase of nucleation layer changes the growth mode to 3D mode. The formation of adsorption sites on the graphene surface by introduction of defects plays a significant role to enhance the nucleation center and grow high-quality layers. A model of the InN nucleation layer on EG is geometrically developed for both growth methods.

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Enhancement of InN Luminescence by Introduction of Graphene Interlayer

Cited by 7 publications

References 22 publications

Remote epitaxy of GaN via graphene on GaN/sapphire templates

Remote epitaxy of GaN via graphene on GaN/sapphire templates

Impact of the Deposition Temperature on the Structural and Electrical Properties of InN Films Grown on Self-Standing Diamond Substrates by Low-Temperature ECR-MOCVD

Growth Mechanism of InN Nucleation Layers on Epitaxial Graphene Using Metal Organic Vapor Phase Epitaxy and Radio-Frequency Molecular Beam Epitaxy

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