Enhancement of Properties of Mn/Y Co-doped Ba_0.67Sr_0.33TiO₃Films on Oxide Electrode by Inserting a SrTiO₃Buffer Layer

Abstract

Mn/Y co-doped Ba 0.67 Sr 0.33 TiO 3 (Mn+Y: BST) thin films were deposited on LaNiO 3 (LNO)/SiO 2 /Si substrates without and with SrTiO 3 (STO) buffer layers by radio frequency (RF) magnetron sputtering technology. Influence of the STO buffer layer thickness on the properties of the Mn+Y: BST films was investigated. X-ray diffraction (XRD) and scanning electron microscopy (SEM) investigations revealed that all the films haveuniform and crack-free surface with a perovskite structure. The Mn+Y: BST films with STO buffer layer of 20 nm showed the best electrical properties. The improved properties have been attributed to the STO buffer layer.