2022
DOI: 10.1016/j.carbon.2022.04.005
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Enhancement of the creation yield of NV ensembles in a chemically vapour deposited diamond

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Cited by 15 publications
(7 citation statements)
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“…The typical zero phonon lines (ZPL) observed at 575 and 637 nm were exclusively present in samples S1–S5 with N 2 addition from 0.2% to 1.5%; this is consistent with the Raman spectra depicted in Figure 3 , which corresponded to the neutral (N-V) 0 and negatively charged states (N-V) − of nitrogen vacancy centers. The presence of silicon vacancy (Si-V) centers at 737 nm [ 34 ] can be attributed to quartz windows etching exposed to high-heat plasma inside the CVD chamber [ 34 , 35 ]. It was observed that, for sample S1 with a nitrogen concentration of 0.2%, there was an insignificant Si-V center signal compared to sample S0 without any nitrogen addition, while no Si-V center signal could be detected for samples S2–S5.…”
Section: Resultsmentioning
confidence: 99%
“…The typical zero phonon lines (ZPL) observed at 575 and 637 nm were exclusively present in samples S1–S5 with N 2 addition from 0.2% to 1.5%; this is consistent with the Raman spectra depicted in Figure 3 , which corresponded to the neutral (N-V) 0 and negatively charged states (N-V) − of nitrogen vacancy centers. The presence of silicon vacancy (Si-V) centers at 737 nm [ 34 ] can be attributed to quartz windows etching exposed to high-heat plasma inside the CVD chamber [ 34 , 35 ]. It was observed that, for sample S1 with a nitrogen concentration of 0.2%, there was an insignificant Si-V center signal compared to sample S0 without any nitrogen addition, while no Si-V center signal could be detected for samples S2–S5.…”
Section: Resultsmentioning
confidence: 99%
“…[ 11,39 ] The splitting is caused by local electronic field of the measured NV − center, [ 39 ] which is closely related to the concentration and distribution of P1 centers in the diamond lattice. [ 40 ] For the 〈111〉‐grown sample‐IbD06 with nitrogen of ≈221 ppm, a large splitting of 13.4 ± 0.3 MHz was observed for the as‐grown NV − centers. This splitting decreased to 11.2 ± 0.3 MHz after HPHT treatment at 1500 °C, consistent with the physical picture of N aggregation under HPHT conditions.…”
Section: Resultsmentioning
confidence: 99%
“…4 b was grown on a CVD diamond substrate along the (113) crystal orientation to facilitate Nitrogen incorporation and create NVs preferentially oriented along the NV axis lying closest to the growth plane 41 . A 15 μm thick layer containing NVs was obtained using 12 C and 15 N enriched gas mixture, which led to an estimated NV density of ~300 ppb and a P1-center density of ~0.1 ppm 53 .…”
Section: Methodsmentioning
confidence: 99%