2019
DOI: 10.1063/1.5096283
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Enhancement of the open circuit voltage of Cu2O/Ga2O3 heterojunction solar cells through the mitigation of interfacial recombination

Abstract: Thin film solar cells were fabricated using cuprous oxide (Cu2O) absorber layers grown by chemical vapor deposition (CVD) and gallium oxide (Ga2O3) buffer layers grown by atomic layer deposition (ALD) on the cuprous oxide CVD films. The in-situ formation of heterojunction in the same deposition system without exposure to oxygen-rich ambient was found to be effective in mitigating the creation of detrimental cupric oxide (CuO) at the interface, resulting in a pristine photovoltaic junction capable of delivering… Show more

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Cited by 34 publications
(20 citation statements)
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“…These data suggest that the surface states, and in analogy also interface states, rather than the bulk defects limit the photovoltage in Cu 2 O heterostructures. This is supported by recent observations of very high opencircuit voltages in Cu 2 O/Ga 2 O 3 heterojunction solar cells 12,13 .…”
supporting
confidence: 78%
“…These data suggest that the surface states, and in analogy also interface states, rather than the bulk defects limit the photovoltage in Cu 2 O heterostructures. This is supported by recent observations of very high opencircuit voltages in Cu 2 O/Ga 2 O 3 heterojunction solar cells 12,13 .…”
supporting
confidence: 78%
“…Of note, this beneficial effect on photovoltage, when coupling Cu 2 O to Ga 2 O 3 to form a heterojunction, was also observed by Chua et al. in their development of an all‐oxide solar cell, which achieved a record high V oc of ≈1.8 V. [ 210 ]…”
Section: Materials Choice For Pec Water Splittingmentioning
confidence: 55%
“…[14][15][16] It is quite interesting that the performance of UV PD using a-GaO x is comparable or even better than its crystalline counterpart. [15,17] Except for UV PDs, a-GaO x materials also have extensive applications in areas of solar cells, [18][19][20][21] phosphors, [22,23] resistance random access memories (RRAMs), [24][25][26][27] gas sensors, [28] and radiation detectors. [29] These versatile applications together with the fact that scalable a-GaO x can be easily prepared on almost any substrates make it appealing for flexible electronics and giant microelectronics.…”
Section: Introductionmentioning
confidence: 99%