2017
DOI: 10.1007/s11661-017-4058-1
|View full text |Cite
|
Sign up to set email alerts
|

Enhancement of Thermoelectric Behavior of La0.5Co4Sb12−x Te x Skutterudite Materials

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
4

Citation Types

0
4
0

Year Published

2017
2017
2023
2023

Publication Types

Select...
6
1

Relationship

0
7

Authors

Journals

citations
Cited by 11 publications
(4 citation statements)
references
References 25 publications
0
4
0
Order By: Relevance
“…The local bonding of the filler inside the cavities plays a pivotal role for enhancing the zT parameter. Rare-earth elements have been usually a common choice to fill these voids, with plenty of examples reported in the literature. Recently, our group demonstrated that the high-pressure synthesis is an effective tool to stabilize lanthanides into the voids of the □Co 4 Sb 12 skutterudite, as in the case of La, Ce and Yb, and mischmetal, consequently reducing the thermal conductivity (<2–3 Wm –1 K –1 ).…”
Section: Introductionmentioning
confidence: 99%
“…The local bonding of the filler inside the cavities plays a pivotal role for enhancing the zT parameter. Rare-earth elements have been usually a common choice to fill these voids, with plenty of examples reported in the literature. Recently, our group demonstrated that the high-pressure synthesis is an effective tool to stabilize lanthanides into the voids of the □Co 4 Sb 12 skutterudite, as in the case of La, Ce and Yb, and mischmetal, consequently reducing the thermal conductivity (<2–3 Wm –1 K –1 ).…”
Section: Introductionmentioning
confidence: 99%
“…Firstly, our objective was to obtain a n-type semiconductor and Te has four valence electrons, one more than Sb. Secondly, it is known that Te can minimize defect formation in Sb 2 Se 3 films [ 23 ], which may be correlated with its smaller atomic radius (1.43 Å) [ 24 ] in comparison with the gap of (Sb 4 Se 6 ) n ribbons (~3.5 Å) [ 25 ]. The structure, morphology, and photoelectric performances of these thin films were systematically investigated.…”
Section: Introductionmentioning
confidence: 99%
“…[45,[52][53][54][55][56] Nevertheless, the MA process consumes a long time for the complete reaction between Co and Sb, and some impurity phases form, leading to a seriously deteriorated 𝜎. [57] Therefore, it's hard to achieve high ZTs in this way, [46,[57][58][59][60] as summarized in Table S1 (Supporting Information). Other studies use the annealing of ingot combined with hot pressing (HP) and/or SPS processes to fabricate single-phase CoSb 3 .…”
Section: Introductionmentioning
confidence: 99%
“…Here, we originally found that introducing Yb in CoSb 3 by an innovatively designed one-step heating-sustaining-cooling process can directly obtain Yb-doped CoSb 3 products and cost only <5 h, which is very shorter fabrication time than that of reported studies. [27,35,39,40,[45][46][47][52][53][54][55][56][57][58][59][60][61][62] Moreover, the introduction of Yb can significantly promote the two peritectic reactions including CoSb + L → CoSb 2 and CoSb 2 + L → CoSb 3 during the solidification process, and rapidly crystallize the micro/nanosized radial-like grains, leading to the single-phase CoSb 3 , as illustrated in Figure 1a, Such a onestep process only need <5 h, which is much less than those fabrication time of the reported works (Figure S2, Supporting Information). [27,[30][31][32][33][34][35][36][37][38][39][40][41][45][46][47]50,52,57,58,63] The as-fabricated singlephase CoSb 3 has a maximum ZT value (ZT max ) of 1.12, which is competitive to that of the reported values (Figure S3 and Table…”
Section: Introductionmentioning
confidence: 99%