Enhancements of p-Si/CdO Thin Films Solar Cells with doping (Sb, Sn, Se)

Hussein, Hasan I.; Shaban, Auday H.; Khudayer, Iman Hameed

doi:10.1016/j.egypro.2018.11.175

Cited by 25 publications

(8 citation statements)

References 17 publications

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“…The optical absorption data (the value of absorption coefficient α) were analyzed from the following classical relation [20][21][22] α = (2.303)(A)/(t),…”

Section: Advanced Materials and Application Technologiesmentioning

confidence: 99%

Synthesis and Characterization of the Thin Films NiSe2/Si Heterojunction for Solar Cells

Hasan

Obaid

Hassun

et al. 2021

KEM

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Thin film solar cells are preferable to the researchers and in applications due to the minimum material usage and to the rising of their efficiencies. In particular, thin film solar cells, which are designed based one transition metal chalcogenide materials, paly an essential role in solar energy conversion market. In this paper, transition metals with chalcogenide Nickel selenide termed as (NiSe2/Si) are synthesized. To this end, polycrystalline NiSe2 thin films are deposited through the use of vacuum evaporation technique under vacuum of 2.1x10-5 mbar, which are supplied to different annealing temperatures. The results show that under an annealed temperature of 525 K, the nickel sulfoselenide thin films are polycrystalline with an efficient regularity and best crystalline quality. In addition, the results demonstrate that the intersection argument for the optical properties under investigation provid the direct bandgap, over which the films have inferred on variety (1.55 and 1.75 eV). Overall, the results illustrate that an efficiency of 2.89% can be achieved with 525 K temperature.

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“…The optical absorption data (the value of absorption coefficient α) were analyzed from the following classical relation [20][21][22] α = (2.303)(A)/(t),…”

Section: Advanced Materials and Application Technologiesmentioning

confidence: 99%

Synthesis and Characterization of the Thin Films NiSe2/Si Heterojunction for Solar Cells

Hasan

Obaid

Hassun

et al. 2021

KEM

Self Cite

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“…Their useful electrical and optical properties in a single material make them useful for several application fields. Oxide semiconductor thin films have huge applications in the field of electronics devices, such as flat screens, photovoltaic devices, display devices (liquid crystal displays), touch screens, gas sensors, electro-chromic devices, dilute magnetic semiconductors, ozone sensing devices, dye-sensitized solar cells and light-emitting diodes (LEDs) due to their high conductivity and good transparency [79][80][81][82][83][84][85].…”

Section: Oxide Semiconductor-based Thin-film Electronic Devicesmentioning

confidence: 99%

Metal oxide semiconductor-based Schottky diodes: a review of recent advances

Al-Ahmadi

2020

Mater. Res. Express

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Metal-oxide-semiconductor (MOS) structures are essential for a wide range of semiconductor devices. This study reviews the development of MOS Schottky diode, which offers enhanced performance when compared with conventional metal-semiconductor Schottky diode structures because of the presence of the oxide layer. This layer increases Schottky barrier heights and reduced leakage currents. It also compared the MOS and metal-semiconductor structures. Recent advances in the development of MOS Schottky diodes are then discussed, with a focus on aspects such as insulating materials development, doping effects, and manufacturing technologies, along with potential device applications ranging from hydrogen gas sensors to photodetectors. Device structures, including oxide semiconductor thin film-based devices, p-type and n-type oxide semiconductor materials, and the optical and electrical properties of these materials are then discussed with a view toward optoelectronic applications. Finally, potential future development directions are outlined, including the use of thinfilm nanostructures and high-k dielectric materials, and the application of graphene as a Schottky barrier material.Low contact resistance is required for good ohmic contact and high-speed semiconductor devices. In contrast, an ideal Schottky junction acts like an ideal diode, where high current only flows in the forward-biased direction and offers infinite resistance in the opposite direction [11]. The type of junction can be changed by varying different metals and the doping level of the semiconductor [12]. The core focus of this study is on the Schottky diode for its use in the switching devices, which reduces the current leakage and power consumption [13].This review is categorized into fives sections. Following the introductory section, the comparison of MS and MOS devices is provided in the second section, while important equations related to MOS Schottky Diode are described for carrier transport mechanism in the third section. The fourth section highlights the recent progress of MOS devices and their applications in the fourth section. Lastly, section five briefly sums up the reviewed findings and indicates the future direction of the work. ReviewGenerally, the metal oxide/insulator semiconductor (MOS/MIS) structure is obtained by inserting an insulator layer between a metal and a semiconductor [14]. In the MOS structure, an oxide layer separates the metal and semiconductor from each other. For instance, at the metal/insulator interfaces, there is a continuous distribution of surface states with energies located in the bandgap of the semiconductor [15]. The intermediate oxide layer helps prevent the diffusion of the metal into the semiconductor but also alleviates the electric field reduction in MIS Schottky diodes. The interfacial layer helps determine the device characteristics, performance, and stability [16]. Karabulut et al [17] explains that the MOS or MIS capacitor is the most effective device for semiconductor surfaces based on their practical...

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“…However, Se-doped CdO is scarce in the literature. Hussein et al [30] investigated the solar cell potential of the heterostructure formed between Sb, Se and Sn doped CdO film and p-Si and obtained the best results in terms of performance in the device formed with Se doped CdO. Kumar et al [31] produced photodetectors by coating undoped CdO and (Fe, Mn and Mn-Fe) doped CdO films on Si by spray pyrolysis technique.…”

Section: Introductionmentioning

confidence: 99%

Long‐term stable and high responsivity visible-ultraviolet photodetector of Se-doped CdO film on Si by spin coating

Şakar

Orhan

Yıldırım

et al. 2023

J. Phys. D: Appl. Phys.

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Se-doped CdO thin films were prepared on p-Si substrates via spin coating. Morphological, structural and absorption measurements of CdO:Se film was performed. Then, a CdS:Se/p-Si heterojunction was produced by coating CdO:Se film on a p-Si substrate using spin coating method. From the I-V measurements, it has been seen that the device has a very good rectification feature in the dark, at room temperature. In order to investigate the performance of the device under light, a detailed analysis was performed by performing I-V measurements under UV light (365 and 395 nm, 10 mW/cm2) and different intensities of visible light (between 10-125 mW/cm2) as well as ambient light. It was observed that the CdO:Se/p-Si heterojunction performed well under both illumination conditions. The maximum responsivity and specific detectivity values were obtained as 0.72 and 4.47 A/W and 3.31×109 and 2.05×1010 Jones for visible and UV regions, respectively. It was also seen that the device exhibited very high performance and stability even after 160 days.

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Enhancements of p-Si/CdO Thin Films Solar Cells with doping (Sb, Sn, Se)

Cited by 25 publications

References 17 publications

Synthesis and Characterization of the Thin Films NiSe2/Si Heterojunction for Solar Cells

Synthesis and Characterization of the Thin Films NiSe2/Si Heterojunction for Solar Cells

Metal oxide semiconductor-based Schottky diodes: a review of recent advances

Long‐term stable and high responsivity visible-ultraviolet photodetector of Se-doped CdO film on Si by spin coating

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