Enhancing defect-related photoluminescence by hot implantation into SiO2 layers

Im, Seongil; Jeong, Jae Yeon; Oh, Min Suk; Kim, H. B.; Chae, Keun Hwa; Whang, C. N.; Song, Joong-Ho

doi:10.1063/1.123423

Cited by 23 publications

(10 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…21 The formation of Er/Er-oxide clusters with dimensions of 2-5 nm has also been examined in both S Er and S NC+Er systems. 28,30 It is worthwhile to note that the Si= O double bonds have been reported at the surface of amorphous silica 33 as well as at the interface between the surface oxide layer and the Si substrate. 3͑b͒.…”

Section: Photoluminescence Studiesmentioning

confidence: 99%

“…3͑a͔͒. 10,11,[28][29][30][31] Defects such as radiative nonbridging oxygen-hole center ͑NBOHC͒ ͑O 3 ϵ Si-O·͒ has been proposed and shown to emit light ϳ580 nm. In addition, the contrast of Si NCs is relatively low in amorphous SiO 2 .…”

Section: Photoluminescence Studiesmentioning

confidence: 99%

“…Most of the NCs are possibly very small ͑Յ1 nm͒ or the crystalline cores are randomly oriented with respect to the electron beam direction and therefore they are indistinguishable in HRTEM. 28,30 Beside NBOHC, the Si= O double bonds have also been invoked, where the optical transition process in the Si= O binding states ͑residing at the surface of Si crystallites͒ has been proposed for explaining the observed red emission. Annealing is very important for activating Er 3+ ions, although the annealing enhanced Er clustering is detrimental for achieving maximum possible efficiency.…”

Section: Photoluminescence Studiesmentioning

confidence: 99%

See 2 more Smart Citations

Influence of annealing on the Er luminescence in Si-rich SiO2 layers coimplanted with Er ions

Kanjilal

Rebohle

Voelskow

et al. 2008

Journal of Applied Physics

View full text Add to dashboard Cite

The impact of rapid thermal annealing ͑RTA͒ in producing samples by sequential implantation of Si and Er ions into a 200 nm SiO 2 layer combined with different annealing cycles as well as the corresponding room-temperature visible and infrared photoluminescence ͑PL͒ have been studied. The Er-related PL intensity at 1533 nm for the samples prepared by implanting Si with subsequent annealing, followed by Er implantation, and final annealing ͑type I͒ was found to be stronger than the one produced similarly but without the first annealing step ͑type II͒. In fact, the 1533 nm peak intensity in the optimized RTA processed sample is comparable to the PL yield of the furnace-annealed sample. Moreover, the excitation wavelength ͑405 nm͒ was found to be suitable for exciting the Si= O related point defects in the SiO 2 layer and can provide a PL band with a maximum at ϳ580 nm. While this band was further intensified in the presence of Si nanocrystals ͑Si NCs͒, it became weaker by introducing additional Er 3+ ions with a concomitant rise of the 1533 nm Er PL, confirming the visible range pumping of Er 3+ . The detailed spectral analyses suggest that the 580 nm band is the result of the excitation/deexcitation mechanism in molecule such as states in the Si= O or the Si= O state mediated recombination of carriers in Si NCs according to the model proposed by ͓Wolkin et al., Phys. Rev. Lett. 82, 197 ͑1999͔͒. The samples were further characterized by transmission electron microscopy and Fourier-transform infrared spectroscopy. The time-resolved PL measurements and a modeling by rate equations were also performed to determine and justify the energy migration mechanism from Si NC to the neighboring Er 3+ .

show abstract

Section: Photoluminescence Studiesmentioning

confidence: 99%

Section: Photoluminescence Studiesmentioning

confidence: 99%

Section: Photoluminescence Studiesmentioning

confidence: 99%

See 1 more Smart Citation

Influence of annealing on the Er luminescence in Si-rich SiO2 layers coimplanted with Er ions

Kanjilal

Rebohle

Voelskow

et al. 2008

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…Many authors also observed a red or infrared PL between 1.3 and 1.9 eV after high-temperature annealing of Si-implanted oxides [14][15][16][17][18][19][20][21][22][23][24][25][26][27][28][29][30]. In [27] it was shown, that the observed emission photon energy of Si-implanted oxides could be tuned between 1.4 and 1.8 eV by varying the annealing time in oxygen at 1000 • C. Im et al implanted thermally grown SiO 2 layers with Si at RT and at 400 • C, and found that the implantation at 400 • C increases the intensity of the yellow PL by 50% to 100% [29]. Chou et al performed rapid thermal annealing (RTA) with T ≥ 950 • C on Si-implanted SiO 2 films in dry and wet N 2 atmosphere leading to the appearance of a PL peak at 2.2 eV and 1.9 eV, respectively [21].…”

Section: Luminescence Of Ion-implanted Sio 2 Layersmentioning

confidence: 99%

Blue photo- and electroluminescence of silicon dioxide layers ion-implanted with group IV elements

Rebohle

Borany

Fröb³

et al. 2000

Appl Phys B

177

119

View full text Add to dashboard Cite

The microstructural, optical and electrical properties of Si-, Ge-and Sn-implanted silicon dioxide layers were investigated. It was found, that these layers exhibit strong photoluminescence (PL) around 2.7 eV (Si) and between 3 and 3.2 eV (Ge, Sn) at room temperature (RT), which is accompanied by an UV emission around 4.3 eV. This PL is compared with that of Ar-implanted silicon dioxide and that of Si-and Ge-rich oxide made by rf magnetron sputtering. Based on PL and PL excitation (PLE) spectra we tentatively interpret the blue-violet PL as due to a T 1 → S 0 transition of the neutral oxygen vacancy typical for Si-rich SiO 2 and similar Ge-or Sn-related defects in Ge-and Sn-implanted silicon dioxide. The differences between Si, Ge and Sn will be explained by means of the heavy atom effect. For Geimplanted silicon dioxide layers a strong electroluminescence (EL) well visible with the naked eye and with a power efficiency up to 5 × 10 −4 was achieved. The EL spectrum correlates very well with the PL one. Whereas the EL intensity shows a linear dependence on the injection current over three orders of magnitude, the shape of the EL spectrum remains unchanged. The I − V dependence exhibiting the typical behavior of Fowler-Nordheim tunneling shows an increase of the breakdown voltage and the tunnel current in comparison to the unimplanted material. Finally, the suitability of Ge-implanted silicon dioxide layers for optoelectronic applications is briefly discussed. 78.60.F; 78.55; 61.72.T; 85.30.T; 78.66.J Since the early 60s Si has been the dominating material of microelectronics because of its excellent mechanical, chemical and electrical properties. However, with increasing miniaturization one approaches more and more the physical limits drawn by the material properties of Si. The increase of the line resistance and the corresponding parasitic capacitors with decreasing feature size is opposed to a further miniaturization and an enhancement of the clock rate. The PACS:

show abstract

“…In addition to the limited space of such nanocrystals, which facilitates radiative recombination, an oxide layer also provides defect sites to aid this process. Accordingly, many processes such as co-sputtering [3], ion implantation [4,5], and annealing [6] have been reported to fabricate nanostructured Si or Ge embedded in an oxide matrix to make visible-light emissions possible.…”

Section: Introductionmentioning

confidence: 99%

Eliminated UV Light Emitted from Nanostructured Silica Thin Film using H2 Plasma by ICP-CVD

Chiang¹,

Hon²,

Teoh³

et al. 2011

CNANO

View full text Add to dashboard Cite

Nanostructured mesoporous silica thin film has been deposited on silicon substrate by the spin-coating technique using CTAB as a template under acidic conditions. TGA, SEM, HRTEM, N2 adsorption-desorption isotherm, FTIR and synchrotron high flux beamline were used to characterize the microstructure and photoluminescence properties of the resulting film. After being calcined at 400 o C for 12 h, the thin film exhibited a very smooth surface and interconnected pores, with a pore size of about 1-2 nm. The synchrotron photoluminescence spectra show that the samples after calcination have three obvious luminescence peaks around 322, 387 and 410 nm arising from nonbridging oxygen hole centers (NBOHCs) and Si-OH surface complexes. The UV emission (322 nm) due to NBOHCs is inhibited by H2 plasma treatment, indicating that the nonbridging oxygen was saturated by the hydrogen atoms.

show abstract

Enhancing defect-related photoluminescence by hot implantation into SiO2 layers

Cited by 23 publications

References 10 publications

Influence of annealing on the Er luminescence in Si-rich SiO2 layers coimplanted with Er ions

Influence of annealing on the Er luminescence in Si-rich SiO2 layers coimplanted with Er ions

Blue photo- and electroluminescence of silicon dioxide layers ion-implanted with group IV elements

Eliminated UV Light Emitted from Nanostructured Silica Thin Film using H2 Plasma by ICP-CVD

Contact Info

Product

Resources

About