Enhancing Electrochemical Transistors Based on Polymer-Wrapped (6,5) Carbon Nanotube Networks with Ethylene Glycol Side Chains

Heimfarth, Daniel; Leinen, Merve Balcı; Klein, Patrick; Allard, Sybille; Scherf, Ullrich; Zaumseil, Jana

doi:10.1021/acsami.1c23586

Cited by 11 publications

(7 citation statements)

References 60 publications

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“…The choice of polymer-wrapped s-SWCNTs is related to their well-known solution processability, compatibility with printing techniques, and their successful adoption as an active layer in electrolytegated transistors, achieving high performance and high stability in water. [52,59,60] In an inverter circuit, the transistors share the same gate electrode (which acts as input node) and their drain terminals are electrically connected (acting as output node). Since both the n-type and p-type devices have been fabricated on the same substrate, and the semiconductors are deposited through the same printing technique, their integration into complementary logic circuits is highly simplified.…”

Section: Resultsmentioning

confidence: 99%

A n‐type, Stable Electrolyte Gated Organic Transistor Based on a Printed Polymer

Viola

Melloni

Molazemhosseini

et al. 2022

Adv Elect Materials

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electrophysiology sensors, [1][2][3][4] neuromorphic computing [5][6][7] and digital circuits, [8,9] where signal amplification and low-voltage operation are required. Electrolyte-gated organic transistors (EGOTs) are a well-recognized candidate to fulfill such requirements. Indeed, they offer an intrinsic local amplification of input signals together with the opportunity of a stable, lowvoltage operation in water. [10] EGOTs are three-terminal devices based on organic semiconductors, where an ionically conducting and electronically insulating solid or liquid electrolyte is employed as a gate insulator. [11] Depending on the permeability or the impermeability of the organic semiconductor to ions in the electrolyte solution, EGOTs can be divided into two classes. [12] In the former case (permeable organic semiconductor), when a potential is applied to the gate electrode, the ions drift through the electrolyte and can penetrate the semiconductor. Therefore, the field-effect, which induces the accumulation of electronic charge to compensate ionic charge, is extended to the whole three-dimensional volume of the semiconductor. The resulting volumetric capacitance depends on the semiconductor thickness and can reach very large values, in the range of few F cm −3 . [13,14] These kinds of devices are addressed as organic electrochemical transistors (OECTs). In the case of an organic semiconductor impermeable to the ions, upon polarization of the gate electrode, an electrical double layer (EDL) is formed at the interface between electrolyte and semiconductor. The EDL can be roughly modelized as a sub-nanometric thick capacitor, with capacitance values in the order of 1-10 µF cm −2 , [12] independent of the semiconductor thickness. In this case, the devices are addressed as electrolytegated organic field-effect transistors (EGOFETs).The volumetric capacitance (in OECTs) or the EDL (in EGO-FETs) allows the low voltage operation of EGOTs, [10,12,14] with gate potential that can be reduced to even less than 1 V. The low-voltage operation of EGOTs is fundamental when they are employed as transducer devices for electrophysiology and as biosensors (the gate voltage range is below the limit at which unwanted electrochemical processes occur -such as water electrolysis) or as logic circuits (thanks to very low power consumption). [10,12,14] To date, most of the solution-processable EGOTs reported in the literature are p-type devices based on spin-coated hole-transporting semiconductors, such as P3HT, [15][16][17][18][19] PEDOT:PSS, [20][21][22][23][24][25] Electrolyte-gated organic transistors (EGOTs) are promising and versatile devices for next-generation biosensors, neuromorphic systems, and lowvoltage electronics. They are particularly indicated for applications where stable operation in aqueous environment and cost-effective manufacturing are required. Indeed, EGOTs can be fabricated through low-cost, large area, and scalable techniques, such as printing, from a large portfolio of solution processable organic materials, which a...

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Section: Resultsmentioning

confidence: 99%

A n‐type, Stable Electrolyte Gated Organic Transistor Based on a Printed Polymer

Viola

Melloni

Molazemhosseini

et al. 2022

Adv Elect Materials

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“…11 It is known that the properties of channel materials determine the electrical properties of printed thin film transistors (TFTs). 12 Solutionprocessable semiconductor materials in the forms of organic compounds, 3,[13][14][15][16] graphene, [17][18][19][20][21][22] carbon nanotubes, and oxides 23,24 have been developed to be compatible with current printing techniques. [25][26][27][28][29][30][31] Among them, semiconducting single-walled carbon nanotubes (sc-SWCNTs) are a promising candidate for high-performance flexible printed electronics due to their high carrier mobility, excellent chemical stability, mechanical stability, and compatibility with solution-based printing processes.…”

Section: Introductionmentioning

confidence: 99%

Large area roll-to-roll printed semiconducting carbon nanotube thin films for flexible carbon-based electronics

Chen

et al. 2023

Nanoscale

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“…Different from the need for high-quality semiconducting or metallic samples for device applications, most of the synthetic methods produce a complicated mixture of semiconducting and metallic species, which is a significant hindrance to the commercialization of SWCNT-related applications . There are many purification methods, such as density gradient ultracentrifugation, gel electrophoresis, gel chromatography, aqueous two-phase extractions, and polymer isolation, , for separating individual nanotube species on a microgram scale. In the commonly used polymer extraction method, the conjugated polymer composed of C, H, O, and N as the main elements or materials, such as DNA hydroxyl chains, are used as dispersants, which are selectively coated on the CNT surfaces through π–π interactions .…”

Section: Introductionmentioning

confidence: 99%

Residual Molecular Groups’ Adsorption in Tuning the Transport Properties of Carbon Nanotubes

Cao

Zhang

2023

ACS Appl. Electron. Mater.

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Carbon nanotubes (CNTs) have attracted much attention due to their unique electronic structures and transport properties for the application of carbon-based sensor components. It is doubtful in experiments that if the adsorbates, such as the groups of conjugated polymers, hinder the performance of transport on CNTs. Here, we systemically studied the transport properties of common groups (−CH3, −C6H5, −NH2, −OH) adsorbed on (7, 0)-CNT by first-principles calculations. Our results show that the adsorption of surface groups will lead to different impurity states near the Fermi level. The localized electrons at the Fermi level limit the electrical transport properties of CNTs. The electron transport capacity of CNTs becomes weaker with increase in the impurity concentration and the carrier mobility becomes lower. Our research provides an instructive theoretical foundation for fabricating high-performance carbon-based sensor devices.

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Enhancing Electrochemical Transistors Based on Polymer-Wrapped (6,5) Carbon Nanotube Networks with Ethylene Glycol Side Chains

Cited by 11 publications

References 60 publications

A n‐type, Stable Electrolyte Gated Organic Transistor Based on a Printed Polymer

A n‐type, Stable Electrolyte Gated Organic Transistor Based on a Printed Polymer

Large area roll-to-roll printed semiconducting carbon nanotube thin films for flexible carbon-based electronics

Residual Molecular Groups’ Adsorption in Tuning the Transport Properties of Carbon Nanotubes

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