Enhancing the defect contrast in ECCI through angular filtering of BSEs

Han, Han; Hantschel, Thomas; Schulze, Andreas; Strakos, Libor; Vystavel, T.; Loo, Roger; Kunert, Bernardette; Langer, Róbert; Vandervorst, Wilfried; Caymax, Matty

doi:10.1016/j.ultramic.2019.112922

Cited by 8 publications

(13 citation statements)

References 33 publications

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“…The stage control provides a rotation and tilting accuracy of 0.1°, which guarantees precise alignments of the sample to the channeling conditions [16]. A detailed description of the tool setup can be found in reference [7]. During the measurement, the sample is first aligned with the channeling conditions with help of acquired electron channeling patterns (ECP).…”

Section: Methodsmentioning

confidence: 99%

“…1b shows a close-up view of the area defined by the blue rectangle. At another location, a pile-up of a dozen of TDs along the [1][2][3][4][5][6][7][8][9][10] direction is observed and marked by a green rectangle. Some specific dislocations from the long pile-up in green rectangle are magnified in Fig.…”

Section: Ecci Sensitivity Of Defect Detectionmentioning

confidence: 99%

“…For the reference ECCI micrograph covering 16.7 μm 2 , it has a field of view of 5 μm, a height-to-length ratio of 2:3, a 1536 pixels x 1024 pixels resolution, a line integration of 10 and a dwell time of 5 μs at 20 kV and 0.8 nA as previously applied in Ref. [7,9]. The acquisition takes ~79 s per image.…”

Section: Optimization Of Ecci Mappingmentioning

confidence: 99%

“…Automated ECCI mapping refers to the program-controlled acquisition of an array of ECCI micrographs over a defined area at a given location [4]. Moreover, the technique has been applied to the versatile analysis of individual defects on both blanket [5][6][7] and patterned structures [8,9]. However, systematic optimizations of different imaging parameters have not been proposed yet.…”

Section: Introductionmentioning

confidence: 99%

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Application and Optimization of Automated ECCI Mapping to the Analysis of Lowly Defective Epitaxial Films on Blanket or Patterned Wafers

Han

Hantschel

Lagrain

et al. 2021

International Symposium for Testing and Failure Analysis

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The physical limits of CMOS scaling, as predicted by Moore's Law, should have already been reached several years ago. However, the scaling of transistors is still ongoing due to continuous improvements in material quality enabling the fabrication of complex device structures with nm-size dimensions. More than ever, the structural properties and the eventual presence of crystalline defects in the various semiconductor materials (SiGe, III/V) play a critical role. Electron channeling contrast imaging (ECCI) is a powerful defect analysis technique developed in recent years. The technique allows for fast and non-destructive characterizations with the potential for extremely low detection limits. The analysis of lowly defective materials requires measurements over large areas to obtain statistically relevant data. Automated ECCI mapping routines enable the quantification of crystalline defect densities as low as ~1e5 cm-2, e.g., Si0.75Ge0.25 strain relaxed buffers (SRB) epitaxially grown on a Si substrate. Methods to reduce the total measurement time without compromising its sensitivity will be discussed. The measurement routine has also been optimized to detect extended crystalline defects in III/V layers, selectively grown on shallow trench isolation patterned Si wafers. Throughout these examples, this study demonstrates the great potential of ECCI as a versatile and industry-relevant technique for defect analysis.

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Section: Methodsmentioning

confidence: 99%

Section: Ecci Sensitivity Of Defect Detectionmentioning

confidence: 99%

Section: Optimization Of Ecci Mappingmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Application and Optimization of Automated ECCI Mapping to the Analysis of Lowly Defective Epitaxial Films on Blanket or Patterned Wafers

Han

Hantschel

Lagrain

et al. 2021

International Symposium for Testing and Failure Analysis

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“…[26,27] The samples had threading dislocation densities (TDD) of ∼ 3 − 6 × 10 7 cm −2 as extracted from defect etching and confirmed by electron channeling contrast imaging (ECCI). [28,29] The growth conditions were kept identical except the partial pressure of AsH 3 , which was tuned to reach different As-doping levels in Ge 1−x Sn x layers. The associated material properties of the samples considered in this study are listed in Table I.…”

Section: Methodsmentioning

confidence: 99%

A demonstration of donor passivation through direct formation of V-Asi complexes in As-doped Ge1−xSnx

Khanam

Vohra

Slotte

et al. 2020

Journal of Applied Physics

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Positron annihilation spectroscopy in Doppler and coincidence Doppler mode was applied on Ge 1−x Sn x epitaxial layers, grown by chemical vapor deposition with different total As concentrations (∼ 10 19 − 10 21 cm −3 ), high active As concentrations (∼ 10 19 cm −3 ), and similar Sn concentrations (5.9 − 6.4%). Positron traps are identified as mono-vacancy complexes. Vacancy-As complexes, V-As i , formed during the growth were studied to deepen the understanding of the electrical passivation of the Ge 1−x Sn x :As epilayers. Larger mono-vacancy complexes, V-As i (i ≥ 2) are formed as the As doping increases. The total As concentration shows a significant impact on the saturation of the number of As atoms (i = 4) around the vacancies in the sample epilayers.

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Crystalline defect analysis in epitaxial Si0.7Ge0.3 layer using site-specific ECCI-STEM

Han

Strakos

Hantschel

et al. 2021

Micron

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Enhancing the defect contrast in ECCI through angular filtering of BSEs

Cited by 8 publications

References 33 publications

Application and Optimization of Automated ECCI Mapping to the Analysis of Lowly Defective Epitaxial Films on Blanket or Patterned Wafers

Application and Optimization of Automated ECCI Mapping to the Analysis of Lowly Defective Epitaxial Films on Blanket or Patterned Wafers

A demonstration of donor passivation through direct formation of V-Asi complexes in As-doped Ge1−xSnx

Crystalline defect analysis in epitaxial Si0.7Ge0.3 layer using site-specific ECCI-STEM

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