Enhancing the surface passivation of TiO2 coated silicon wafers

Abstract

In this letter, we demonstrate good surface passivation of lightly diffused n-type solar cell emitters using titanium dioxide (TiO2) thin films treated with a furnace oxidation process. Transient-photoconductance decay, x-ray photoelectron spectroscopy, and scanning electron microscopy measurements indicate that the silicon dioxide layer formed at the TiO2:Si interface provides excellent surface passivation. Emitter dark saturation current densities of 4.7×10−14 A/cm2 are achieved by this method, demonstrating that TiO2 films are compatible with high-efficiency solar cell structures.

Células Solares Finas Em Silício Tipo N: Avaliação De Diferentes Pastas Metálicas Para Contato Elétrico Da Face Dopada Com Boro

“…O filme de dióxido de titânio é uma opção muito vantajosa, pois não é tóxico, tem alta resistência química, tem um alto índice de refração e um baixo índice de absorção [21]. O filme AR foi depositado por evaporação em alto vácuo com canhão de elétrons.…”

Dielectric films for Si solar cell applications

“…[15][16][17][18][19] These layers are deposited on a thin, typically 200 Å oxide layer, which provides adequate interface passivation. SiO 2 for surface passivation is grown by high-temperature dry oxidation, typically at about 1,000°C in a conventional thermal furnace, followed by a forming gas anneal.…”

Low-Temperature, Chemically Grown Titanium Oxide Thin Films with a High Hole Tunneling Rate for Si Solar Cells

“…Among the aforementioned materials, TiO 2 is the most attractive because it exhibits a smaller bandgap that ensures efficient carrier tunneling. Furthermore, TiO 2 was demonstrated to be an alternative to silicon nitride as a Si surface passivation layer [18]. However, CVD is a slow and expensive process that might limit productivity in the future.…”