Entangled Photon Pairs from Semiconductor Quantum Dots

Akopian, N.; Lindner, Netanel H.; Poem, Eilon; Berlatzky, Y.; Avron, J. E.; Gershoni, D.; Gerardot, Brian D.; Petroff, P. M.

doi:10.1103/physrevlett.96.130501

Cited by 859 publications

(872 citation statements)

References 33 publications

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“…In anisotropic quantum dots the electron-hole exchange interaction splits the two excitonic states by ¡ AES (see in the ¡ AES through the application of external magnetic [70] and electric [43,44] fields, or through spectral filtering [71], applied uniaxial stress [72], and quantum size and composition engineering [50][51][52][53]. An alternative scheme [73,74] involves manipulation of the biexciton binding energy.…”

Section: Non-classical Light Sourcesmentioning

confidence: 99%

Directed self‐assembly of single quantum dots for telecommunication wavelength optical devices

Dalacu¹,

Reimer

Frédérick

et al. 2010

Laser & Photonics Reviews

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Strong confinement of charges in few electron systems such as in atoms, molecules and quantum dots leads to a spectrum of discrete energy levels that are often shared by several degenerate quantum states. Since the electronic structure is key to understanding their chemical properties, methods that probe these energy levels in situ are important. We show how electrostatic force detection using atomic force microscopy reveals the electronic structure of individual and coupled self-assembled quantum dots. An electron addition spectrum in the Coulomb blockade regime, resulting from a change in cantilever resonance frequency and dissipation during tunneling events, shows one by one electron charging of a dot. The spectra show clear level degeneracies in isolated quantum dots, supported by the first observation of predicted temperature-dependent shifts of Coulomb blockade peaks. Further, by scanning the surface we observe that several quantum dots may reside on what topologically appears to be just one. These images of grouped weakly and strongly coupled dots allow us to estimate their relative coupling strengths.

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Section: Non-classical Light Sourcesmentioning

confidence: 99%

Directed self‐assembly of single quantum dots for telecommunication wavelength optical devices

Dalacu¹,

Reimer

Frédérick

et al. 2010

Laser & Photonics Reviews

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“…The main aim here is the suppression of this fine structure splitting to allow the emission of entangled photon pairs, as convincingly demonstrated using a variety of techniques. [8][9][10][11] Such a low, C 2v point symmetry is also relevant for the [001]-grown quantum dots with circular or square-shaped base provided that the top and bottom interfaces are non-equivalent or if an in-plane strain is present. 7,[12][13][14] A promising, alternative approach to suppress the fine structure splitting of the neutral exciton is the growth along the [111] crystal axis, which is also the orientation of most nanowires.…”

Section: Introductionmentioning

confidence: 99%

Magnetic field induced valence band mixing in [111] grown semiconductor quantum dots

Durnev¹,

Glazov²,

Ivchenko³

et al. 2013

Phys. Rev. B

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We present a microscopic theory of the magnetic field induced mixing of heavy-hole states ±3/2 in GaAs droplet dots grown on (111)A substrates. The proposed theoretical model takes into account the striking dot shape with trigonal symmetry revealed in atomic force microscopy. Our calculations of the hole states are carried out within the Luttinger Hamiltonian formalism, supplemented with allowance for the triangularity of the confining potential. They are in quantitative agreement with the experimentally observed polarization selection rules, emission line intensities and energy splittings in both longitudinal and transverse magnetic fields for neutral and charged excitons in all measured single dots.

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“…Thanks to the strong Coulomb interaction, only a single photon is emitted for a given emission energy 11 . This property has been exploited to generate single photons 6 , as well as single entangled photon pairs 12,13 . However, because only a few per cent of the emitted photons can be collected for QDs in bulk semiconductors, control of the QD spontaneous emission is needed to obtain bright quantum light sources.…”

mentioning

confidence: 99%

Bright solid-state sources of indistinguishable single photons

et al. 2013

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Bright sources of indistinguishable single photons are strongly needed for the scalability of quantum information processing. Semiconductor quantum dots are promising systems to build such sources. Several works demonstrated emission of indistinguishable photons while others proposed various approaches to efficiently collect them. Here we combine both properties and report on the fabrication of ultrabright sources of indistinguishable single photons, thanks to deterministic positioning of single quantum dots in well-designed pillar cavities. Brightness as high as 0.79±0.08 collected photon per pulse is demonstrated. The indistinguishability of the photons is investigated as a function of the source brightness and the excitation conditions. We show that a two-laser excitation scheme allows reducing the fluctuations of the quantum dot electrostatic environment under high pumping conditions. With this method, we obtain 82 ± 10% indistinguishability for a brightness as large as 0.65 ± 0.06 collected photon per pulse.

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Entangled Photon Pairs from Semiconductor Quantum Dots

Cited by 859 publications

References 33 publications

Directed self‐assembly of single quantum dots for telecommunication wavelength optical devices

Directed self‐assembly of single quantum dots for telecommunication wavelength optical devices

Magnetic field induced valence band mixing in [111] grown semiconductor quantum dots

Bright solid-state sources of indistinguishable single photons

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