Epitaxial 4H–SiC based Schottky diode temperature sensors in ultra-low current range

Kumar, Vibhor; Verma, Jyoti; Maan, A. S.; Akhtar, Jamil

doi:10.1016/j.vacuum.2020.109590

Cited by 50 publications

(21 citation statements)

References 24 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This parameter quantitatively evaluates how well a proposed model (in this case, a linear dependence) predicts experimental measurements. Additionally, for each current level, the fitting root mean squared error was divided by associated sensitivity in order to determine the temperature error ( e T) [ 55 ]. As expected, e T varies complementarily to R 2 [ 55 ].…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

60–700 K CTAT and PTAT Temperature Sensors with 4H-SiC Schottky Diodes

Pascu

Pristavu

Brezeanu

et al. 2021

Sensors

View full text Add to dashboard Cite

A SiC Schottky dual-diode temperature-sensing element, suitable for both complementary variation of VF with absolute temperature (CTAT) and differential proportional to absolute temperature (PTAT) sensors, is demonstrated over 60–700 K, currently the widest range reported. The structure’s layout places the two identical diodes in close, symmetrical proximity. A stable and high-barrier Schottky contact based on Ni, annealed at 750 °C, is used. XRD analysis evinced the even distribution of Ni2Si over the entire Schottky contact area. Forward measurements in the 60–700 K range indicate nearly identical characteristics for the dual-diodes, with only minor inhomogeneity. Our parallel diode (p-diode) model is used to parameterize experimental curves and evaluate sensing performances over this far-reaching domain. High sensitivity, upwards of 2.32 mV/K, is obtained, with satisfactory linearity (R2 reaching 99.80%) for the CTAT sensor, even down to 60 K. The PTAT differential version boasts increased linearity, up to 99.95%. The lower sensitivity is, in this case, compensated by using a high-performing, low-cost readout circuit, leading to a peak 14.91 mV/K, without influencing linearity.

show abstract

Section: Resultsmentioning

confidence: 99%

“…Additionally, for each current level, the fitting root mean squared error was divided by associated sensitivity in order to determine the temperature error ( e T) [ 55 ]. As expected, e T varies complementarily to R 2 [ 55 ]. Results are presented in Figure 8 .…”

Section: Resultsmentioning

confidence: 99%

60–700 K CTAT and PTAT Temperature Sensors with 4H-SiC Schottky Diodes

Pascu

Pristavu

Brezeanu

et al. 2021

Sensors

View full text Add to dashboard Cite

show abstract

“…Among these different types of temperature sensors, semiconductor-based diodes or transistor sensors are the most common devices due to their high sensitivity and full compatibility with complementary metal oxide semiconductor (CMOS) technology [8]. To achieve a high sensitivity and wider temperature range, extensive studies were conducted, focusing on the Schottky diode [8][9][10][11][12][13][14], p-n junction diode [15,16] and p-i-n diode [17][18][19]. The sensitivity of these sensors varied from 0.61 mV/K [18] to 5.11 mV/K [8] and the operating temperature limit reached 440 K [10].…”

Section: Introductionmentioning

confidence: 99%

A High-Sensitivity Vacuum Diode Temperature Sensor Based on Barrier-Lowering Effect

Shen

Wang

et al. 2022

Micromachines

View full text Add to dashboard Cite

A new kind of temperature sensor based on a vacuum diode was proposed and numerically studied in this paper. This device operated under different electron emission mechanisms according to the electron density in the vacuum channel. The temperature determination ability of this device was only empowered when working in the electric-field-assisted thermionic emission regime (barrier-lowering effect). The simulated results indicated that the temperature-sensing range of this device was around 273 K–325 K with a supply current of 1 μA. To obtain a linear dependency of voltage on temperature, we designed a proportional-to-absolute-temperature (PTAT) circuit. The mathematic derivation of the PTAT voltage is presented in this study. The temperature-sensing sensitivity was calculated as 7.6 mV/K according to the measured I-U (current versus voltage) characteristic. The structure and principle of the device presented in this paper might provide an alternative method for the study of temperature sensors.

show abstract

“…As the third-generation, wide-band gap semiconductor, silicon carbide (SiC) has the advantages of the wide-band gap, high thermal conductivity, high mechanical strength, strong radiation resistance, and so on. It has been widely used to prepare sensors and power electronic devices working in extreme environments such as high temperature, high frequency, and high pressure [ 9 , 10 , 11 ]. What is noteworthy is that hexagonal SiC as bulk SiC, such as 6H- and 4H-, is considered the most promising semiconductor materials for the preparation of all SiC sensors working in high-temperature environment semiconductors [ 12 , 13 ].…”

Section: Introductionmentioning

confidence: 99%

Study on the Stability of the Electrical Connection of High-Temperature Pressure Sensor Based on the Piezoresistive Effect of P-Type SiC

Liang

Cheng

et al. 2021

Micromachines

View full text Add to dashboard Cite

In this study, a preparation method for the high-temperature pressure sensor based on the piezoresistive effect of p-type SiC is presented. The varistor with a positive trapezoidal shape was designed and etched innovatively to improve the contact stability between the metal and SiC varistor. Additionally, the excellent ohmic contact was formed by annealing at 950 °C between Ni/Al/Ni/Au and p-type SiC with a doping concentration of 1018cm−3. The aging sensor was tested for varistors in the air of 25 °C–600 °C. The resistance value of the varistors initially decreased and then increased with the increase of temperature and reached the minimum at ~450 °C. It could be calculated that the varistors at ~100 °C exhibited the maximum temperature coefficient of resistance (TCR) of ~−0.35%/°C. The above results indicated that the sensor had a stable electrical connection in the air environment of ≤600 °C. Finally, the encapsulated sensor was subjected to pressure/depressure tests at room temperature. The test results revealed that the sensor output sensitivity was approximately 1.09 mV/V/bar, which is better than other SiC pressure sensors. This study has a great significance for the test of mechanical parameters under the extreme environment of 600 °C.

show abstract

Epitaxial 4H–SiC based Schottky diode temperature sensors in ultra-low current range

Cited by 50 publications

References 24 publications

60–700 K CTAT and PTAT Temperature Sensors with 4H-SiC Schottky Diodes

60–700 K CTAT and PTAT Temperature Sensors with 4H-SiC Schottky Diodes

A High-Sensitivity Vacuum Diode Temperature Sensor Based on Barrier-Lowering Effect

Study on the Stability of the Electrical Connection of High-Temperature Pressure Sensor Based on the Piezoresistive Effect of P-Type SiC

Contact Info

Product

Resources

About