Epitaxial growth of bismuth films and bismuth-antimony heterostructures

Direct Magnetic Imaging of Ferromagnetic Domain Structures by Room Temperature Scanning Hall Probe Microscopy Using a Bismuth Micro-Hall Probe

“…4,5) We describe the fabrication of bismuth micro-Hall probes (Bi-HP) with integrated scanning tunnelling microscope (STM) tips and demonstrate for the first time, that by incorporating the Bi-HP into the RT-SHPM system, it is possible to directly image magnetic domains of garnet thin films and demagnetized strontium ferrite permanent magnets. Further, * E-mail address: sandhu@keyaki.cc.u-tokai.ac.jp a comparison of room temperature device figures of merit such as Johnson noise, showed the magnetic field sensitivity of Bi probes to be comparable to that of semiconducting GaAs/AlGaAs heterostructure micro-Hall probes under the measurement conditions described.…”

Shubnikov–de Haas oscillations in electrodeposited single-crystal bismuth films

“…It is possible, however, to grow epitaxial Bi films on BaF 2 substrates by molecular-beam epitaxy ͑MBE͒. 5,8,9 These MBE-grown thin films represent the best quality Bi films available up to now.…”

“…For these studies, materials with lower dimensions such as thin films and nanowires are often required. [3][4][5] Unfortunately, most deposition methods yield Bi films that are polycrystalline with small grains, [6][7][8] which are undesirable for these purposes. It is possible, however, to grow epitaxial Bi films on BaF 2 substrates by molecular-beam epitaxy ͑MBE͒.…”

Особенности гальваномагнитных явлений в сильных магнитных полях в бикристаллах кручения 3D топологического изолятора Bi-=SUB=-1-x-=/SUB=-Sb-=SUB=-x-=/SUB=- (0.07≤ x≤ 0.2)

“…Плотность состояний N s в слоях СИ LDA бикристаллов Bi 1−x Sb x была оценена из квантовых осцилляций по методике [16]. Получены значения N s ∼ (0.2−0.3)10 19 и (1.5−2.5) · 10 19 м −2 для смежных и центральных слоев соответственно, что на несколько порядков выше, чем N s схожих по толщине пленок сплавов Bi 1−x Sb x [17].…”