Epitaxial growth of ferroelectric oxide films

Simultaneous enhancements of polarization and magnetization in epitaxialPb(Zr0.52Ti0.48)O3/Mukherjee1, Hordagoda2, Lampen3 et al. 2015Phys. Rev. B29390View full textAdd to dashboardCite

“…9(a). The ferroelectric characteristics of P/C(0nm)/L (P r = 52 μC/cm 2 and E C = 30 kV/cm) are consistent with earlier reports for epitaxial PZT films of the same composition [49,50]. Compared to the PZT/LSMO system, enhanced polarization is found in the heterostructures with an ultrathin (10-20 nm) CFO sandwich-layer.…”

Magnetoelectric effect in crystallographically textured BaTiO3 films deposited on ferromagnetic metallic glass foils

“…PLD of BTO was accomplished using a KrF excimer laser, = 248 nm. To obtain a high atomic mobility, 18 as required for crystallization of oriented BTO, a laser energy density of 20 J / cm 2 was utilized. This allowed for the ejection of high energy particles from the BTO target, thus enabling the use of a lower deposition temperature and minimizing the oxidation of the MG foil substrates.…”

The structural and piezoresponse properties of c-axis-oriented Aurivillius phase Bi5Ti3FeO15 thin films deposited by atomic vapor deposition

“…[11][12][13][14][15][16][17][18][19] While methods such as sol-gel, 12,19 solid-state reaction, 17,18 and pulsed laser deposition 4 20,21 Atomic vapor deposition (AVD) is based on pulsed liquid-injection chemical vapor deposition with a volume of each pulse of the order of microlitres. 22 It has been proved that AVD can deposit high-quality high-k dielectric or ferroelectric films with a largely uniform film thickness, composition, and electrical properties and is highly suitable for mass production.…”