Epitaxial growth of Ga2O3 thin films on MgO (110) substrate by metal–organic chemical vapor deposition

Quasi-heteroepitaxial growth of β-Ga2O3 on off-angled sapphire (0 0 0 1) substrates by halide vapor phase epitaxy

“…So far, several epitaxial growth techniques of β-Ga 2 O 3 , such as molecular beam epitaxy (MBE) [11][12][13], metalorganic vapor phase epitaxy (MOPVE) [14,15], and pulsed laser deposition (PLD) [16,17], have been reported. Among them, MBE is mainly used for the study of β-Ga 2 O 3 power devices [5][6][7][8].…”

“…Growth of β-Ga 2 O 3 on foreign substrates has been reported on sapphire [11][12][13][14]16,17], MgO [11,15], etc. These β-Ga 2 O 3 thin-films are highly textured, exhibiting single out-of-plane orientations.…”

“…(1 1 0) with four-and two-fold symmetric in-plane rotational domains, respectively [11,15]. If β-Ga 2 O 3 is grown on a substrate with no in-plane rotational symmetry, then the formation of such rotational domains can be suppressed.…”

Synthesis and Structural Characterization of β‐Ketoiminate‐Stabilized Gallium Hydrides for Chemical Vapor Deposition Applications

“…The oxygen 1s peak of Ga 2 O 3 is reported to appear at a binding energy of approximately 531 eV,40 therefore peaks observed at 530.44, 530.35 and 530.52 eV were attributed to O 1s of the native oxide. A small additional O 1s peak at approximately 532 eV within the XPS spectra for the films and standard were attributed to the presence of trace amounts of other oxygen‐containing impurities within the samples 40b. Gallium‐to‐oxygen ratios (Table 5) were calculated from the XPS data, showing the standard sample and film F5 to be near stoichiometric Ga 2 O 3 (Ga/O ratio 0.67 and 0.62, respectively), with slight discrepancies being attributed to trace impurities at the surface level.…”

Facile Fabrication of Ga2O3 Nanorods for Photoelectrochemical Water Splitting

“…The high resolution Ga 2p XPS spectrum of the O‐Ga 2 O 3 sample in Figure c reveals that the peaks centered at 1118.1 and 1145.1 eV can be assigned to the typical Ga 2p 3/2 and 2p 1/2 peaks of Ga 3+ , respectively . In addition, the Ga 3d peak at 20.9 eV corresponds to the characteristic peak of Ga 2 O 3 (Figure d) . Figure e presents the O 1s peak for the O‐Ga 2 O 3 sample, which can be de‐convoluted into two peaks.…”