Epitaxial Growth of Intermetallic MnPt Films on Oxides and Large Exchange Bias

Abstract

High-quality epitaxial growth of inter-metallic MnPt films on oxides is achieved, with potential for multiferroic heterostructure applications. Antisite-stabilized spin-flipping induces ferromagnetism in MnPt films, although it is robustly antiferromagnetic in bulk. Moreover, highly ordered antiferromagnetic MnPt films exhibit superiorly large exchange coupling with a ferromagnetic layer.

Electrically reversible cracks in an intermetallic film controlled by an electric field

“…Recent efforts on the integration of magnetic intermetallic alloy thin films with functional ferroelectric oxides have created exciting opportunities for manipulating magnetism and resistivity of intermetallics via small electric fields, which offers great promise for low-energy-consuming memory device applications 1–5 . Such heterostructures, such as FeRh/BaTiO 3 and FeRh/0.72PbMg 1/3 Nb 2/3 O 3 –0.28PbTiO 3 (PMN-PT), rely on the strong interfacial-strain-mediated magnetoelectric coupling between the piezoelectric effect in the ferroelectric layer and the phase instability around the phase transition of the FeRh layer to generate giant magnetization and resistivity modulation 1,2,4 .…”

Nonvolatile Electric Control of the Anomalous Hall Effect in an Ultrathin Magnetic Metal

“…[22,23] As shown in Figure 3a, the XMCD signals of Co can be clearly seen and a larger XMCD intensity at the normal incidence relative to the 30° grazing incidence is consistent with the appearance of PMA. We therefore further conducted X-ray magnetic circular dichroism (XMCD) measurements, which are element-specific and capable of detecting even a subtle magnetic moment of ≈0.005 µ B per atom.…”

Frontiers in strain-engineered multifunctional ferroic materials

“…From a materials synthesis perspective, one of the most difficult challenges in creating these heterostructure devices is finding ways to strongly couple (at the atomic level) dissimilar materials which could have incompatible chemical structure and reactivity, large lattice mismatch, incompatible surface energies, and/or deposition conditions. [151] Future studies will surely explore how to tailor the interfaces to increase coupling between these layers. Furthermore, creating heterostructure devices generally requires the patterning of multifunctional oxide materials.…”