Epitaxial growth of rutile TiO2 thin films by oxidation of TiN/Si{100} heterostructure

Moatti, Adele; Bayati, R.; Narayan, J.

doi:10.1016/j.actamat.2015.10.022

Cited by 34 publications

(30 citation statements)

References 37 publications

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“…However, no more dislocation is added to the interface since the temperature is low and kinetically it is impossible for new dislocations to nucleate based on the misfit strain at room-temperature. As it was explained earlier, the slip systems in the VO 2 monoclinic structure are ½ In addition, we also observed formation of steps at the bottom side of the relaxed grain, along low energy directions which lie in low energy planes to minimize the energy of the systems [18]. In the monoclinic structure, these steps are formed along [010] and [201] directions as it is shown in the HAADF image in Figure 3(b).…”

Section: Resultssupporting

confidence: 73%

“…It is important to note that, tensile strain at the interface moderately increases the kinetic barrier for dislocation nucleation. Even though thermodynamically the h c is calculated at 15 nm, kinetically dislocations do not form up to a bit higher value due to enhanced dislocation nucleation barrier enforced by the tensile strain [18,24].…”

Section: Resultsmentioning

confidence: 96%

“…As the electronics industry is aiming to miniaturize the length-scales of films and electronic devices, it becomes inevitable to understand the behavior of materials in that scale. One of the main characteristics that are defined for thin-film growth is the critical thickness above which misfit dislocations nucleate and glide to the interface for thin-film relaxation [18,19]. However, in the case of transition-metal oxides, the important question arises about the determination of the structure and strain-state of thin-films across the critical thickness.…”

Section: Introductionmentioning

confidence: 99%

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Mechanism of strain relaxation: key to control of structural and electronic transitions in VO₂ thin-films

Moatti

Sachan

Narayan

2019

Materials Research Letters

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VO 2 is a smart transition-metal oxide, which exhibits a tetragonal-to-monoclinic phase transition at ∼ 68°C. We report a case where both tetragonal and monoclinic phases exist in relaxed and strained domains, respectively, above the transition temperature. The epitaxial nucleation of these relaxed domains of VO 2 over the strained one occurs when the critical thickness criterion is met through the emergence of interfacial dislocations under domain-matching epitaxy paradigm. Below this critical thickness, the film isostructurally (across the transition temperature range) adopts a strained-monoclinic phase. Above the critical thickness, domains are structurally free to transform from tetragonal to monoclinic. IMPACT STATEMENT We studied formation and atomic-scale characterization of a novel heterostructure of relaxed (tetragonal/monoclinic) and unrelaxed (monoclinic) VO 2 phases. The monoclinic-to-tetragonal structural transition occurs at the critical thickness of ∼ 15 nm.

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Section: Resultssupporting

confidence: 73%

Section: Resultsmentioning

confidence: 96%

Section: Introductionmentioning

confidence: 99%

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Mechanism of strain relaxation: key to control of structural and electronic transitions in VO₂ thin-films

Moatti

Sachan

Narayan

2019

Materials Research Letters

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“…The energy density and repetition rate were set at 3.5-4 J.cm -2 and 5 Hz, respectively. The TiN layers were subsequently oxidized inside the deposition chamber under an oxygen partial pressure of 1×10 -2 Torr and temperature of 650 o C for 1 minute [21]. Eventually, the samples were cooled down to room temperature inside the deposition chamber under an oxygen partial pressure of 1×10 -4 Torr.…”

Section: Methodsmentioning

confidence: 99%

Epitaxial integration of TiO2 with Si(100) through a novel approach of oxidation of TiN/Si(100) epitaxial heterostructure

et al. 2016

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In this study, we provide a novel approach to the epitaxial integration of TiO 2 with Si(100) and investigate the defect mediated ferromagnetism in TiO 2 structure. Epitaxial TiO 2 thin films were grown on a TiN/Si(100) epitaxial heterostructure through oxidation of TiN where a single crystalline rutile-TiO 2 (r-TiO 2 ) with a [110] out-of-plane orientation was obtained. The epitaxial relationship is determined to be TiO 2 (1 0)||TiN(100) and TiO 2 (110)||TiN(110). We rationalized this epitaxy using the domain matching epitaxy paradigm. First TiN is grown epitaxially on Si(100). Subsequently, TiN/Si(100) samples are oxidized to create r-TiO 2 /TiN/Si(100) epitaxial heterostructures. The details of the mechanism behind the oxidation of single crystalline TiN to TiO 2 was investigated using atomic scale high resolution electron microscopy techniques. Defects introduced to the heterostructure during oxidation caused ferromagnetism in TiO 2 thin film which is reversible and can be tuned by controlling oxygen partial pressure. The source of magnetization is correlated with the presence of oxygen vacancy leading to introduction of two localized states; hybrid and polaron among neighboring Ti atoms, and titanium vacancy providing four holes to form molecular oxygen. We present structure property correlations and its impact on the next generation solid state devices.

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“…The epitaxial growth is characterized by the m ‐lattice constant of the epitaxial layer matching with n of the substrate and the domain epitaxial orientation relationship with the small residual domain mismatch present in the epilayer . This domain‐matching epitaxy (DME) paradigm has been demonstrated for several cases of thin film epitaxy …”

Section: Introductionmentioning

confidence: 99%

Domain epitaxy of crystalline BeO films on GaN and ZnO substrates

et al. 2018

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We demonstrated the growth of wurtzite‐crystalline beryllium oxide (BeO) thin films on GaN and ZnO substrates using atomic layer deposition (ALD). Single‐crystalline BeO were epitaxially grown on GaN. Despite the inherently large lattice mismatch of BeO and GaN atoms, the 6/5 and 7/6 domain‐matched structures dramatically reduced the residual strain in BeO thin films. On the other hand, the lattice mismatch of BeO and ZnO was not effectively accommodated in the mixed domains. X‐ray diffraction (XRD) confirmed the in‐plane crystallization of BeO‐on‐substrates in the (002){102}BeO||(002){102}Sub orientation and relaxation degrees of 20.8% (GaN), 100% (ZnO). The theoretical critical thicknesses of BeO for strain relaxation were 2.2 μm (GaN) and 1.6 nm (ZnO), calculated using a total film energy model. Transmission electron microscopy (TEM) and Fourier‐filtered imaging supported the bonding configuration and crystallinity of wurtzite BeO thin films on GaN and ZnO substrates.

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Epitaxial growth of rutile TiO2 thin films by oxidation of TiN/Si{100} heterostructure

Cited by 34 publications

References 37 publications

Mechanism of strain relaxation: key to control of structural and electronic transitions in VO₂ thin-films

Mechanism of strain relaxation: key to control of structural and electronic transitions in VO₂ thin-films

Epitaxial integration of TiO2 with Si(100) through a novel approach of oxidation of TiN/Si(100) epitaxial heterostructure

Domain epitaxy of crystalline BeO films on GaN and ZnO substrates

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Epitaxial growth of rutile TiO2 thin films by oxidation of TiN/Si{100} heterostructure

Cited by 34 publications

References 37 publications

Mechanism of strain relaxation: key to control of structural and electronic transitions in VO2 thin-films

Mechanism of strain relaxation: key to control of structural and electronic transitions in VO2 thin-films

Epitaxial integration of TiO2 with Si(100) through a novel approach of oxidation of TiN/Si(100) epitaxial heterostructure

Domain epitaxy of crystalline BeO films on GaN and ZnO substrates

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Mechanism of strain relaxation: key to control of structural and electronic transitions in VO₂ thin-films

Mechanism of strain relaxation: key to control of structural and electronic transitions in VO₂ thin-films