Epitaxial growth of SiC films at low temperature and its photoluminescence

Wu, Zhao; Zhang, Zhiyong; Deng, Zhouhu; Wang, Xuewen; Yan, J F; Ni, Yun-jiang

doi:10.1109/icsict.2006.306598

Cited by 3 publications

(2 citation statements)

References 8 publications

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“…Growth of 4H-SiC epitaxial layers for device fabrication, is typically performed by Chemical Vapor Deposition (CVD), a technique which has been extensively studied, characterized and analyzed [1,2]. As an alternate method, we have explored Hot Filament CVD [3][4][5][6][7][8][9], also referred to as Hot Wire or Catalytic CVD, as an alternate approach. The promise of this technique lies in the preconditioning of the reaction compounds by the high temperature filaments, enabling both in-situ wafer cleaning and epitaxial growth at lower temperatures while providing symmetric heating of the substrate from both sides in a cold wall reactor.…”

Section: Introductionmentioning

confidence: 99%

“…Both differentiating features support the promise of high-throughput 4H-SiC growth resulting in low bow and easy scalability to 150 mm and 200 mm substrates. Several groups have attempted Hot Filament Chemical Vapor Deposition (HFCVD) growth of silicon carbide [3][4][5][6], but it was not until recently that crystalline growth of 3C-SiC on (100) silicon and (0001) 6H-SiC substrates was demonstrated, with omega-scans with FWHM as low as 333 and 88 arcsec respectively [7][8][9]. In this paper, we present for the first time the successful HFCVD growth of 4H-SiC epilayers on 4 o off-axis 4H-SiC substrates and the analysis of these epitaxial layers using optical and SEM microscopy, AFM imaging, micro-Raman and high resolution X-ray diffraction (HRXRD).…”

Section: Introductionmentioning

confidence: 99%

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Hot Filament CVD Growth of 4H-SiC Epitaxial Layers

Zeghbroeck

Robinson

Brow

2018

MSF

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Hot filament CVD (HFCVD) growth of undoped 4H-SiC epitaxial layers on 100 mm n-type 4o-off 4H-SiC substrates is presented as an alternate growth method for the first time. High quality crystalline material with a low density of polytype inclusions has been demonstrated and characterized with optical micrographs, SEM imaging, micro-Raman measurements, and high resolution XRD. Typical growth rates are ~3 μm/hour. Double rocking omega scans revealed diffraction peaks with a FWHM of 23 arcsec.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Hot Filament CVD Growth of 4H-SiC Epitaxial Layers

Zeghbroeck

Robinson

Brow

2018

MSF

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Hot Filament CVD epitaxy of 3C-SiC on 6H and 3C-SiC substrates

Hens

Brow²,

Robinson³

et al. 2017

MRS Advances

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For the first time, we are reporting the growth of high quality single crystalline 3C-SiC epitaxially on hexagonal silicon carbide substrates using Hot Filament Chemical Vapor Deposition (HF-CVD) on full 4” wafers. Rocking curve X-Ray diffraction (XRD) measurements resulted in a full width at half maximum (FWHM) as low as 88 arcsec for a 40 µm thick layer. We achieved this quality using a carefully optimized process making use of the additional degrees of freedom the hot filaments create. The filaments allow for precursor pre-cracking and a tuning of the vertical thermal gradient, which creates an improved thermal field compared to conventional Chemical Vapor Deposition. Growth rates of up to 8 µm/h were achieved with standard silane and propane chemistry, and further increased to 20 µm/h with chlorinated chemistry. The use of silicon carbide substrates promises superior layer quality compared to silicon substrates due to their better match in lattice parameters and thermal expansion coefficients. High resolution scanning electron microscopy, X-Ray rocking measurements, and micro-Raman allow us to assess the crystalline quality of our material and to compare it to layers grown on low-cost silicon substrates. Hall measurements reveal a linear increase of the charge carrier density in the material with the flow of nitrogen gas as a dopant. Electron densities above 10-18 cm-3 have been reached.

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Effects of the Size of Charged Nanoparticles on the Crystallinity of SiC Films Prepared by Hot Wire Chemical Vapor Deposition

Kim

Kwon

et al. 2020

Coatings

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Non-classical crystallization suggests that crystals can grow with nanoparticles as a building block. In this case, the crystallization behavior depends on the size and charge of the nanoparticles. If charged nanoparticles (CNPs) are small enough, they become liquid-like and tend to undergo epitaxial recrystallization. Here, the size effect of SiC CNPs on film crystallinity was studied in the hot-wire chemical vapor deposition process. To do this, SiC nanoparticles were captured under different processing conditions—in this case, wire temperature, precursor concentration and the filament bias. Increasing the temperature of tungsten wires and decreasing the ratio of (SiH4 + CH4)/H2 reduced the size of the SiC nanoparticles. When the nanoparticles were small enough, an epitaxial SiC film approximately 100-nm-thick was grown, whereas larger nanoparticles produced polycrystalline SiC films. These results suggest that the size of the CNPs is an important process variable when growing films by means of non-classical crystallization.

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Epitaxial growth of SiC films at low temperature and its photoluminescence

Cited by 3 publications

References 8 publications

Hot Filament CVD Growth of 4H-SiC Epitaxial Layers

Hot Filament CVD Growth of 4H-SiC Epitaxial Layers

Hot Filament CVD epitaxy of 3C-SiC on 6H and 3C-SiC substrates

Effects of the Size of Charged Nanoparticles on the Crystallinity of SiC Films Prepared by Hot Wire Chemical Vapor Deposition

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