Hot Filament CVD Growth of 4H-SiC Epitaxial Layers

Zeghbroeck, B. Van; Robinson, Hannah; Brow, Ryan

doi:10.4028/www.scientific.net/msf.924.120

Cited by 4 publications

(2 citation statements)

References 10 publications

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“…Another unique characteristic of the technique is the ability to perform localized or selective deposition on patterned substrates. 97 One of the processes involved in CVD is MOCVD, otherwise known as metal organic chemical vapor deposition. It is the main instrument used for production of LED.…”

Section: Common Deposition Methods Of Gate Oxide Filmsmentioning

confidence: 99%

Review—Gate Oxide Thin Films Based on Silicon Carbide

Odesanya

Ahmad²,

Andriyana³

et al. 2022

ECS J. Solid State Sci. Technol.

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A comprehensive review of the features of silicon carbide (SiC) and various methods of deposition of gate oxides are presented. The SiC material, which is mostly employed as a base component in metal oxide semiconductor field effect transistors is very promising for its high voltage, high power, high temperature, and high breakdown field properties, features which have made it very attractive for use in power electronic devices over its counterparts in the field. Despite these great features, and the significant progress recorded in the past few years regarding the quality of the material, there are still some issues relating to optimization of the surface and interface processing. This review discusses the effect of surface modification and treatment as a means of enhancing the electrical performance of the SiC-based MOSFETs and identifies the challenges of controlling the density of dielectric/SiC interface trap that is needed to improve the values of mobility channels, and several oxidation techniques that could be used to surmount the structural limitations presently encountered by the SiC/silicon dioxide (SiO2). Reliability as a significant aspect of electronic structures was also discussed with emphasis on causes of their breakdown and possible solutions, especially in high thermal applications.

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Section: Common Deposition Methods Of Gate Oxide Filmsmentioning

confidence: 99%

Review—Gate Oxide Thin Films Based on Silicon Carbide

Odesanya

Ahmad²,

Andriyana³

et al. 2022

ECS J. Solid State Sci. Technol.

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show abstract

“…Although continuous improvement has been made in SiC epitaxial growth, such as the high uniformity in doping concentration and remarkable reduction of epi-defects (trianglar 3C inclusion and carrot defect) [7,8], the density of extended defects in SiC epi-wafer is still on the order of 10 2 -10 4 cm −2 . The size and performance of SiC devices, especially for high-voltage bipolar devices, are still severely hindered by the extended defects, surface defects, and interfacial dislocations of SiC substrate and its epitaxial layers.…”

Section: Introductionmentioning

confidence: 99%

Forward Voltage Drop Induced by an Abnormal Threading Dislocation Aggregation in 4H-SiC GTO Devices

Cui

Chen

et al. 2019

Materials

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An abnormal star-like defect was found on the failed SiC gate turn-off thyristor (GTO) devices after metal removal and KOH etching at 450 °C in this work. It is of extraordinary larger size of 210–580 µm, even much larger than the etch pit of a micropipe in 4H-SiC. In addition, the abnormal star-like defect, exhibiting the consistent orientation with the six-fold symmetry of silicon carbide, was found to consist of several penetrating dislocations with the help of a LEXT OLS4000 3D laser confocal microscope. These abnormal star-like etch pits can severely reduce the forward blocking characteristic of GTOs, while exerting insignificant influence on the forward current-voltage characteristics between anode and gate electrode of the 4H-SiC GTO devices. Interestingly, the relationship between forward voltage drop and dislocation density is affected by the abnormal star-like defect. A regular increase of forward voltage drop at 100 A/cm2 was observed with the increasing dislocation density, while this correlation disappears in the presence of an abnormal star-like defect.

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Generation of Charged SiC Nanoparticles During HWCVD Process

Kim

Kwon

et al. 2020

Electron. Mater. Lett.

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Hot Filament CVD Growth of 4H-SiC Epitaxial Layers

Cited by 4 publications

References 10 publications

Review—Gate Oxide Thin Films Based on Silicon Carbide

Review—Gate Oxide Thin Films Based on Silicon Carbide

Forward Voltage Drop Induced by an Abnormal Threading Dislocation Aggregation in 4H-SiC GTO Devices

Generation of Charged SiC Nanoparticles During HWCVD Process

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