Epitaxial growth of TiN films on (100) silicon substrates by laser physical vapor deposition

Abstract

We report epitaxial growth of TiN films having low resistivity on (100) silicon substrates using pulsed laser deposition method. The TiN films were characterized using x-ray diffraction, Rutherford backscattering, four-point-probe ac resistivity, high resolution transmission electron microscopy and scanning electron microscopy techniques and epitaxial relationship was found to be 〈100〉 TiN ∥ 〈100〉 Si. TiN films showed 10%–20% channeling yield. In the plane, four unit cells of TiN match with three unit cells of silicon with less than 4.0% misfit. This domain matching epitaxy provides a new mechanism of epitaxial growth in systems with large lattice misfits. Four-point-probe measurements show characteristic metallic behavior of these films as a function of temperature with a typical resistivity of about 15 μΩ cm at room temperature. Implications of low-resistivity epitaxial TiN in silicon device fabrication are discussed.

Pulsed Laser Deposition and Characterization of Zn1−xMnxO Films

“…The interface between the film and the sapphire is sharp and free from any other phase. Due to the large in-plane mismatch (-18%) between the film and the substrate, the epitaxial growth of the film occurs via domain epitaxy where dimensions of the domain become the repeat distance across which matching is maintained [7]. The misfit dislocations were observed at the interface as shown in Fig.4 (b).…”

Exchange bias in Ba0.4Sr0.6TiO3/La0.7Sr0.3MnO3 heterostructures

“…As displayed in Fig. 1(b), the ϕ-scan patterns of (111) It should be noted that the epitaxial growth of BST/LSMO/MgO/TiN on Si (100) is possible due to the epitaxial growth of large mismatched system based on the domain matching epitaxy (DME) paradigm, 14,15 e.g., TiN (a = 4.24 A • ) on Si (100) (a = 5.43 A • ) where four lattice constants of TiN match with three of Si (100). According to DME paradigm, in large mismatch systems most of the lattice mismatch strain is relieved almost immediately upon initiation of growth, i.e.…”

Solid-phase epitaxial growth of (111)-oriented Si film on InGaO3(ZnO)5 buffer layer

“…On the other hand, Narayan et.al [19,20] has showed that a large lattice misfit relative to the substrate can still grow epitaxial layers, which is called 'domain matching epitaxy (DME)', where integral multiples of the lattice constants make a good lattice matching between the substrate and the over-grown layer [21]. DME occurs preferably if the surfaces of the substrate and the film have similar crystal structures (i.e.…”