Epitaxial Growth of ZnSe on Ge

Mutsukura, Nobuki; Ohkoda, T.; Machi, Yoshio

doi:10.1143/jjap.19.999

Cited by 8 publications

(10 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…For radical species they are typically of the order of a few percent or lower. For example, υ CH ∼ υ CH2 ∼ 0.025, υ CH3 ∼ υ C2H5 ∼ 0.01, while υ H ∼ 0.001 [89][90][91][92][93].…”

Section: Plasma Sheath and Surface Conditionsmentioning

confidence: 99%

Plasma nanoscience: from nano-solids in plasmas to nano-plasmas in solids

Ostrikov

Neyts

Meyyappan

2013

Advances in Physics

498

391

View full text Add to dashboard Cite

The unique plasma-specific features and physical phenomena in the organization of nanoscale solid-state systems in a broad range of elemental composition, structure, and dimensionality are critically reviewed. These effects lead to the possibility to localize and control energy and matter at nanoscales and to produce self-organized nano-solids with highly unusual and superior properties. A unifying conceptual framework based on the control of production, transport, and self-organization of precursor species is introduced and a variety of plasmaspecific non-equilibrium and kinetics-driven phenomena across the many temporal and spatial scales is explained. When the plasma is localized to micrometer and nanometer dimensions, new emergent phenomena arise. The examples range from semiconducting quantum dots and nanowires, chirality control of single-walled carbon nanotubes, ultra-fine manipulation of graphenes, nano-diamond, and organic matter, to nano-plasma effects and nano-plasmas of different states of matter. Contents

show abstract

Section: Plasma Sheath and Surface Conditionsmentioning

confidence: 99%

Plasma nanoscience: from nano-solids in plasmas to nano-plasmas in solids

Ostrikov

Neyts

Meyyappan

2013

Advances in Physics

498

391

View full text Add to dashboard Cite

show abstract

“…Optical measurements of sheath width also show an inverse square root dependence on pressure. 28 The origin of the p Ϫ1/2 dependence is revealed by sheath models. [18][19][20] The increase in the rate of ion collisions at higher pressures hinders the acceleration of ions in the sheath, producing an increase in the ion charge density in the sheath, which, in turn, reduces the sheath width and Z s .…”

Section: B Model Of the Powered Electrode Sheathmentioning

confidence: 99%

Electrical optimization of plasma-enhanced chemical vapor deposition chamber cleaning plasmas

Sobolewski

1998

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

Articles you may be interested inRoom temperature synthesis of carbon nanofibers containing nitrogen by plasma-enhanced chemical vapor deposition Appl.Silicon nitride thin films deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition Evaluation of trifluoroacetic anhydride as an alternative plasma enhanced chemical vapor deposition chamber clean chemistry Fluorinated gas discharges are widely used by the semiconductor industry in etching and chamber cleaning applications, but the performance of these discharges varies in unpredictable ways, for unknown reasons believed to be electrical in origin. To investigate possible mechanisms for this behavior, we have measured the electrical characteristics of NF 3 /Ar, CF 4 /O 2 /Ar, and C 2 F 6 /O 2 /Ar chamber cleaning plasmas at 6.7-267 Pa in a 13.56 MHz, capacitively coupled, parallel-plate reactor, using radio-frequency current and voltage probes and optical emission spectroscopy. From the measurements, power losses in the external circuitry surrounding the discharge were determined. Furthermore, using the measurements and equivalent circuit models, the mechanisms by which power was absorbed within the discharge itself were investigated. Power was absorbed most efficiently at particular values of the discharge impedance. These optimal impedances occur in the middle of a transition from capacitive impedances at low pressures to resistive impedances at high pressures. These results illustrate that the plasma impedance is a useful parameter for monitoring and optimizing plasma processes in highly electronegative gases.

show abstract

“…The flow rates of He, H 2 , and CF 4 were fixed at 20, 6, and 3 sccm, respectively, for DLC deposition, and the flow rate of CF 4 was fixed at 20 sccm for plasma treatment. 12 The absorption band for sp 2 stretching modes appears at Ͼ3000 cm Ϫ1 , for example, CH olefinic and CH aromatic rings appear at 3000 and 3050 cm Ϫ1 , respectively. The 95 s growth under the deposition mode shown in Table I resulted in a 5-nm-thick DLC layer.…”

Section: Methodsmentioning

confidence: 99%

Relationship between field emission characteristics and hydrogen content in diamondlike carbon deposited by the layer-by-layer technique using plasma enhanced chemical vapor deposition

Park¹

1997

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

View full text Add to dashboard Cite

Articles you may be interested inGrowth and electron field emission characteristics of nanodiamond films deposited in N 2 / CH 4 / H 2 microwave plasma-enhanced chemical vapor deposition Field emission of nitrogen doped diamondlike carbon films deposited by plasma enhanced chemical vapor deposition J.We deposited diamondlike carbon ͑DLC͒ films of various hydrogen contents by plasma enhanced chemical vapor deposition. The hydrogen content in the DLC film was controlled by a novel technique called a layer-by-layer deposition, in which the deposition of a thin layer of DLC and a CF 4 plasma exposure on its surface were carried out alternatively. The DLC films with different hydrogen content could be obtained by varying the CF 4 plasma exposure time. The emission current increases and turn-on field decreases with decreasing hydrogen content in the DLC film.

show abstract

Epitaxial Growth of ZnSe on Ge

Cited by 8 publications

References 8 publications

Plasma nanoscience: from nano-solids in plasmas to nano-plasmas in solids

Plasma nanoscience: from nano-solids in plasmas to nano-plasmas in solids

Electrical optimization of plasma-enhanced chemical vapor deposition chamber cleaning plasmas

Relationship between field emission characteristics and hydrogen content in diamondlike carbon deposited by the layer-by-layer technique using plasma enhanced chemical vapor deposition

Contact Info

Product

Resources

About