Epitaxial Lateral Overgrowth - a Tool for Dislocation Blockade in Multilayer Systems

Abstract

Results on epitaxial lateral overgrowth of GaAs layers are reported. The methods of controlling the growth anisotropy, the effect of substrate defects filtration in epitaxial lateral overgrowth procedure and influence of the mask on properties of epitaxial lateral overgrowth layers will be discussed. The case of GaAs epitaxial lateral overgrowth layers grown by liquid phase epitaxy on heavily dislocated GaAs substrates was chosen as an example to illustrate the processes discussed. The similarities between our results and those reported recently for GaN layers grown laterally by metallorganic vapour phase epitaxy will be underlined.

Synchrotron x-ray topography analysis of GaAs layers grown on GaAs substrates by liquid phase epitaxial lateral overgrowth

“…The parallel lines are the seams where the adjacent ELO layers merge. Cathodoluminescence measurements have shown that new defects have been created there as a result of imperfect coalescence [11]…”

Electroless Plating with Pd Induced Crystallization of Amorphous Silicon Thin Films

“…The parallel lines are the seams where the adjacent ELO layers merge. Cathodoluminescence measurements have shown that new defects have been created there as a result of imperfect coalescence [11]. The 206 backreflection topograph of sample C ( figure 6(b)) shows a set of overlapping images of the ELO layers and seed windows.…”

Topical review: pathways toward cost-effective single-junction III–V solar cells

“…Defect trapping by selective area epitaxy (SAE) is another type of popular growth technique that has been studied extensively for III-V epitaxy on Si. Defect trapping techniques such as epitaxial lateral overgrowth (ELOG) [137,138,[140][141][142][143][144][145][146][147][148][149][150][151] and aspect ratio trapping (ART) [97,98,[152][153][154][155][156][157][158][159][160][161][162][163] are compatible with SAE, and have been shown to achieve effective dislocation filtering. As illustrated in figure 9(a), by aligning the mask openings in specific crystallographic directions to maximize lateral growth, the ELOG technique confines dislocations within the mask opening window, resulting in reduced dislocation density in the overgrown layer.…”

“…As illustrated in figure 9(a), by aligning the mask openings in specific crystallographic directions to maximize lateral growth, the ELOG technique confines dislocations within the mask opening window, resulting in reduced dislocation density in the overgrown layer. If the mask thickness if sufficiently larger than the mask opening width, defects throughout the ELOG layer can also be eliminated with the 'necking effect' [137,141,142,151]. A research group at KTH developed a variation of the technique called the corrugated ELOG (CELOG), which is capable of forming large-area abrupt III-V/Si heterojunction.…”