Epitaxial lateral overgrowth of GaN over AlOx surface formed on Si substrate

Kobayashi, Nobuhiko P.; Kobayashi, J. T.; Zhang, Xingang; Dapkus, P.D.; Rich, D. H.

doi:10.1063/1.124030

Cited by 38 publications

(22 citation statements)

References 15 publications

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“…But an oxygen contamination of the GaN layers is indicated by cathodoluminescene measurements. They also report an ELO technique starting with an AlAs/GaAs buffer [49]. Here GaAs is selectively etched into stripes and then GaAs and AlAs oxidized whereas only GaAs forms an α-Ga 2 O 3 phase separated by the amorphous/fine grain aluminum oxide.…”

Section: Seed Layermentioning

confidence: 96%

Metalorganic chemical vapor phase epitaxy of gallium‐nitride on silicon

Dadgar

Strittmatter

Bläsing

et al. 2003

phys. stat. sol. (c)

129

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GaN growth on Si is very attractive for low-cost optoelectronics and high-frequency, high-power electronics. It also opens a route towards an integration with Si electronics. Early attempts to grow GaN on Si suffered from large lattice and thermal mismatch and the strong chemical reactivity of Ga and Si at elevated temperatures. The latter problem can be easily solved using gallium-free seed layers as nitrided AlAs and AlN. The key problem for device structure growth on Si is the thermal mismatch leading to cracks for layer thicknesses above 1 µm. Meanwhile, several concepts for strain engineering exist as patterning, Al(Ga)N/GaN superlattices, and low-temperature (LT) AlN interlayers which enable the growth of device-relevant GaN thicknesses. The high dislocation density in the heteropitaxial films can be reduced by several methods which are based on lateral epitaxial overgrowth using ex-situ masking or patterning and by in-situ methods as masking with monolayer thick SiN. With the latter method in combination with strain engineering by LT-AlN interlayers dislocation densities around 109 cm -2 can be achieved for 2.5 µm thick device structures.

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Section: Seed Layermentioning

confidence: 96%

Metalorganic chemical vapor phase epitaxy of gallium‐nitride on silicon

Dadgar

Strittmatter

Bläsing

et al. 2003

phys. stat. sol. (c)

129

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“…An original approach of ELO/Si was proposed by Kobayashi [112]. In a first step, AlAs and then GaAs are grown on Si(111) using well-established technologies of growth of AlAs and GaAs on Si.…”

Section: New Developmentsmentioning

confidence: 99%

Epitaxial Lateral Overgrowth of GaN

Beaumont

Vennéguès

Gibart

2001

phys. stat. sol. (b)

191

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Since there is no GaN bulk single crystal available, the whole technological development of GaN based devices relies on heteroepitaxy. Numerous defects are generated in the heteroepitaxy of GaN on sapphire or 6H‐SiC, mainly threading dislocations (TDs). Three types of TDs are currently observed, a type (with Burgers vector 1/3〈$11 \bar{2}0$〉); c type (with 〈0001〉) and mixed a+c (1/3〈$11 \bar{2}3$〉). The Epitaxial Lateral Overgrowth (ELO) technology produces high quality GaN with TD densities in the mid 106 cm—2, linewidth of the low‐temperature photoluminescence (PL) near‐bandgap recombination peaks <1 meV and deep electron traps reduced below 1014 cm—3 (compared to mid 1015 cm—3 in standard GaN). Numerous modifications of the ELO process have been proposed in order either to avoid technological steps (mask‐less ELO) or to improve it (pendeo‐epitaxy). Basically developed on either sapphire or 6H‐SiC, the ELO technology is also achievable on (111)Si or (111)3C‐SiC/Si provided that an appropriate buffer layer is grown to avoid cracks. More sophisticated technologies have been implemented to further increase the useable part of the ELO GaN surface (two technological steps, three‐step ELO). Unfortunately, in‐depth understanding of the basic ELO process is still missing, i.e. of the growth anisotropy and bending of dislocations.

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“…While the oxidation process and mask patterning are performed in the clean room, the growth surface can be completely protected since the mask is removed in the metalorganic chemical vapor deposition (MOCVD) chamber during the process flow. Use of the Al x O y layers as a high-quality mask for selective lateral overgrowth of GaN in MOCVD has already been demonstrated by Dapkus and co-workers [13]. Using different growth parameters, the same group has also demonstrated growth of GaN on Al x O y [14].…”

Section: Introductionmentioning

confidence: 91%

In-situ mask removal in selective area epitaxy using metal organic chemical vapor deposition

Birudavolu

Luong

Nuntawong

et al. 2005

Journal of Crystal Growth

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We demonstrate an in situ mask removal technique for use in selective area epitaxy (SAE) by metal organic chemical vapor deposition (MOCVD). The mask material is native aluminum oxide (Al x O y ) formed by wet thermal oxidation of a thin AlGaAs layer. The Al x O y layer is patterned using standard photolithography and wet chemistry outside of chamber. The Al x O y layer forms a high-quality, pin-hole-free SAE mask that can be removed within the MOCVD chamber using an in situ HCl etch process. After in situ mask removal, subsequent growth processes produce an atomically smooth and uniform surface. Scanning electron microscopy and atomic force microscopy are used to characterize surface features and measure RMS roughness after each processing step. Using this processing scheme, we form a buried InGaAs quantum well stripe that emits room-temperature photoluminescence. The in situ mask removal may have significant applications in nanopatterned growth processes, where protection of the growth surface from atmospheric exposure reduces surface contamination to improve electrical and radiative interface characteristics. r

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Epitaxial lateral overgrowth of GaN over AlOx surface formed on Si substrate

Cited by 38 publications

References 15 publications

Metalorganic chemical vapor phase epitaxy of gallium‐nitride on silicon

Metalorganic chemical vapor phase epitaxy of gallium‐nitride on silicon

Epitaxial Lateral Overgrowth of GaN

In-situ mask removal in selective area epitaxy using metal organic chemical vapor deposition

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