Epitaxial LiNbO<sub>3</sub> thin films on sapphire substrates grown by solid source MOCVD

Lu, Zhenda; Hiskes, R.; DiCarolis, Steve; Route, R.; Feigelson, Robert S.; Leplingard, F.; Fouquet, J.E.

doi:10.1557/jmr.1994.2258

Cited by 37 publications

(17 citation statements)

References 20 publications

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“…This behavior was the same for different source partial pressures (feeding rates). Similar results have been reported for various other oxide and semiconductor materials deposited by different growth techniques [ 16,20,21 ]. of deposition temperature.…”

Section: Resultssupporting

confidence: 87%

“…This behavior occurred for both sapphire and LiTaO 3 substrates, which means that it is not a substrate-related effect, but is due to either the thermal stability of the MO sources or the reactor size or configuration. At even higher temperatures (near 900'C), poorly adherent milky, polycrystalline films were formed, indicating gas phase nucleation is a major problem in this temperature range [ 16]. The lowest FWHM rocking curve width obtained for a LiNbO 3 film on sapphire was 0.04'.…”

Section: Resultsmentioning

confidence: 97%

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The Growth of Optical Quality LiNbo₃ Thin Films On Sapphire and LiTao₃ Substrates Using Solid-Source Mocvd

1995

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High quality lithium niobate (LiNbO 3 ) epitaxial thin films have been grown on c-plane sapphire and LiTaO3 substrates by solid-source MOCVD using the tetramethyl-heptanedionate sources, Li(thd) and Nb(thd) 4 . Phase content was controllable, and stoichiometric films were reproducibly deposited over a broad temperature range from a Li(thd)-rich source. Using sapphire substrates, with which the occurrence of multiple in-plane orientations is typically a problem, LiNbO 3 films with only one in-plane orientation could be prepared within a narrow range of growth conditions. XRD rocking curve FWHM values as low as 0.04', and optical waveguiding losses near 2dB/cm (1200A thick film, TM 0 mode, 632.8nm) were obtained. However, film thicknesses on sapphire were limited to 2000A because of cracking caused by the large thermal expansion mismatch, and in such thin films, optical confinement is poor.In contrast, LiTaO 3 has almost same lattice constants and thermal expansion coefficients as LiNbO 3 , making it a potentially superior substrate material. Lithium niobate films up to 6000A were successfully deposited on LiTaO 3 substrates without cracking. Film quality was greatly improved, with FWHM values as low as 0.01', and rms surface roughness less than 10 A. Preliminary optical waveguiding losses less than 6 dB/cm for the TEO mode have been achieved.

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Section: Resultssupporting

confidence: 87%

Section: Resultsmentioning

confidence: 97%

The Growth of Optical Quality LiNbo₃ Thin Films On Sapphire and LiTao₃ Substrates Using Solid-Source Mocvd

1995

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“…These temperatures are too high to be compatible with conventional IC metallization schemes, what converts heat generation in one of today's major yield killers (Franke et al, 1999b). On the other hand, in active MEMS, a piezoelectric material is needed, and the usual synthesis temperatures of most commonly used piezoelectric materials (300°C of bismuth titanate Bi 4 Ti 3 O 12 (Yahaya & Salleh, 2004), 700°C of lithium niobate LiNbO 3 (Lu et al, 2011), between 900 C and 1250 C of PZT (P. Gr. Lucuta, Fl.…”

Section: Introductionmentioning

confidence: 99%

Electro-optical characterization of IC compatible microcantilevers

et al. 2015

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The aim of this work is to simulate and optically characterize the piezoelectric performance of CMOS (complementary metal oxide semiconductor) compatible microcantilevers based on aluminium nitride (A1N) and manufactured at room temperature. This study should facilitate the integration of piezoelectric micro-electromechanical systems (MEMS) devices such as microcantilevers, in CMOS technology.Besides compatibility with standard integrated circuit (IC) manufacturing procedures, low temperature processing also translates into higher throughput and, as a consequence, lower manufacturing costs. Thus, the use of the piezoelectric properties of A1N manufactured by reactive sputtering at room temperature is an important step towards the integration of this type of devices within future CMOS technology standards. To assess the reliability of our fabrication process, we have manufactured arrays of free-standing microcantilever beams of variable dimension and studied their To complete the study, X-Ray diffraction as well as d 33 piezoelectric coefficient measurements were also carried out.

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“…Various methods have been employed for the growth of thin LN films, such as sputtering, 4,5) liquid phase epitaxy, 6,7) pulsed laser deposition, 8) and MOCVD. [9][10][11] We have adopted MOCVD from the viewpoints of its potential for high crystal quality, composition controllability and mass productivity. To our knowledge, there is no report on the growth of MgO-doped LN thin films by MOCVD.…”

Section: Introductionmentioning

confidence: 99%

Epitaxial Growth of MgO-doped Lithium Niobate Thin Films by Metalorganic Chemical Vapor Deposition

Iwai

Ohmori

Yoshino

et al. 2004

Jpn. J. Appl. Phys.

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Epitaxial MgO-doped lithium niobate [LiNbO 3 (LN)] single-crystal thin films with a good surface morphology and crystallinity were grown on lithium tantalate [LiTaO 3 (LT)] substrates by low-pressure metalorganic chemical vapor deposition (MOCVD). Dipivaloylmethanatolithium [Li(C 11 H 19 O 2 ); Li(DPM)], pentaethoxyniobium [Nb(OC 2 H 5 ) 5 ; Nb(OEt) 5 ] and bisacetylacetonatomagnesium [Mg(C 5 H 7 O 2 ) 2 ; Mg(Acac) 2 ] were used as volatile metalorganic precursors. The crystallinity of the films was investigated by X-ray diffraction measurements. Reciprocal space mapping indicated that good epitaxial growth had been achieved. The film surface was sufficiently smooth to act as a waveguide. The ordinary and extraordinary refractive indices (n o and n e ) of these as-grown MgO-doped LN thin films were measured to be n o ¼ 2:2844 and n e ¼ 2:1908 at 633 nm, respectively, which were close to those of 3 mol% MgO-doped stoichiometric LN.

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Epitaxial LiNbO₃ thin films on sapphire substrates grown by solid source MOCVD

Cited by 37 publications

References 20 publications

The Growth of Optical Quality LiNbo₃ Thin Films On Sapphire and LiTao₃ Substrates Using Solid-Source Mocvd

The Growth of Optical Quality LiNbo₃ Thin Films On Sapphire and LiTao₃ Substrates Using Solid-Source Mocvd

Electro-optical characterization of IC compatible microcantilevers

Epitaxial Growth of MgO-doped Lithium Niobate Thin Films by Metalorganic Chemical Vapor Deposition

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Epitaxial LiNbO3 thin films on sapphire substrates grown by solid source MOCVD

Cited by 37 publications

References 20 publications

The Growth of Optical Quality LiNbo3 Thin Films On Sapphire and LiTao3 Substrates Using Solid-Source Mocvd

The Growth of Optical Quality LiNbo3 Thin Films On Sapphire and LiTao3 Substrates Using Solid-Source Mocvd

Electro-optical characterization of IC compatible microcantilevers

Epitaxial Growth of MgO-doped Lithium Niobate Thin Films by Metalorganic Chemical Vapor Deposition

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Product

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Epitaxial LiNbO₃ thin films on sapphire substrates grown by solid source MOCVD

The Growth of Optical Quality LiNbo₃ Thin Films On Sapphire and LiTao₃ Substrates Using Solid-Source Mocvd

The Growth of Optical Quality LiNbo₃ Thin Films On Sapphire and LiTao₃ Substrates Using Solid-Source Mocvd