Epitaxy for Energy Materials

Fornari, R.

doi:10.1016/b978-0-444-63304-0.00001-9

Cited by 4 publications

(2 citation statements)

References 168 publications

(146 reference statements)

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“…While higher-order compositions may be possible in TF-VLS growth, they would be expected to be difficult as nucleation of off-target phases and phase segregation would need to be completely suppressed. 111 A further challenge in producing a range of III−V materials comes in the form of Al-containing compounds, which have found wide use as window or active layer multijunction III−V PVs 112 as well as sacrificial layers for epitaxial liftoff processes. 113 Although there are historical examples of Alcontaining compounds being grown by HVPE, 109 as yet, no Alcontaining III−V's have been grown in the recent examples of HVPE and CSVT, and no such compounds have been grown by TF-VLS.…”

Section: Acs Energy Lettersmentioning

confidence: 99%

“…A further challenge in producing a range of III–V materials comes in the form of Al-containing compounds, which have found wide use as window or active layer multijunction III–V PVs as well as sacrificial layers for epitaxial liftoff processes . Although there are historical examples of Al-containing compounds being grown by HVPE, as yet, no Al-containing III–V’s have been grown in the recent examples of HVPE and CSVT, and no such compounds have been grown by TF-VLS.…”

mentioning

confidence: 99%

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Low-Cost Approaches to III–V Semiconductor Growth for Photovoltaic Applications

et al. 2017

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III–V semiconductors form the most efficient single- and multijunction photovoltaics. Metal–organic vapor-phase epitaxy, which uses toxic and pyrophoric gas-phase precursors, is the primary commercial growth method for these materials. In order for the use of highly efficient III–V-based devices to be expanded as the demand for renewable electricity grows, a lower-cost approach to the growth of these materials is needed. This Review focuses on three deposition techniques compatible with current device architectures: hydride vapor-phase epitaxy, close-spaced vapor transport, and thin-film vapor–liquid–solid growth. We consider recent advances in each technique, including the available materials space, before providing an in-depth comparison of growth technology advantages and limitations and considering the impact of modifications to the method of production on the cost of the final photovoltaics.

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